Patents by Inventor Jiou-Kang Lee
Jiou-Kang Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9499396Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: GrantFiled: February 17, 2015Date of Patent: November 22, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Patent number: 9422151Abstract: A semiconductor device includes a substrate and a movable membrane proximal to the substrate. The semiconductor device further includes a mesa over the substrate and protruded from a surface of the substrate toward the movable membrane. The mesa includes a strike hitting portion configured to receive a striking force from the membrane and a hybrid stress buffer under the strike hitting portion, wherein the hybrid stress buffer includes at least two layers which are distinguishable by a difference in hardness.Type: GrantFiled: September 18, 2015Date of Patent: August 23, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Wen-Chuan Tai, Alexander Kalnitsky, Hsin-Ting Huang, Hsiang-Fu Chen, Jiou-Kang Lee, Ching-Kai Shen
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Patent number: 9238581Abstract: An integrated circuit structure includes a triple-axis accelerometer, which further includes a proof-mass formed of a semiconductor material; a first spring formed of the semiconductor material and connected to the proof-mass, wherein the first spring is configured to allow the proof-mass to move in a first direction in a plane; and a second spring formed of the semiconductor material and connected to the proof-mass. The second spring is configured to allow the proof-mass to move in a second direction in the plane and perpendicular to the first direction. The triple-axis accelerometer further includes a conductive capacitor plate including a portion directly over, and spaced apart from, the proof-mass, wherein the conductive capacitor plate and the proof-mass form a capacitor; an anchor electrode contacting a semiconductor region; and a transition region connecting the anchor electrode and the conductive capacitor plate, wherein the transition region is slanted.Type: GrantFiled: January 28, 2013Date of Patent: January 19, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Shang-Ying Tsai, Jiou-Kang Lee, Jung-Huei Peng
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Publication number: 20160009089Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.Type: ApplicationFiled: September 21, 2015Publication date: January 14, 2016Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jung-Huei Peng, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Ting-Hau Wu
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Patent number: 9138994Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.Type: GrantFiled: January 7, 2010Date of Patent: September 22, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jung-Huei Peng, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Ting-Hau Wu
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Patent number: 9133017Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: GrantFiled: June 5, 2014Date of Patent: September 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Publication number: 20150217996Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: ApplicationFiled: April 13, 2015Publication date: August 6, 2015Inventors: Chia-Hua Chu, Chun-Wen Cheng, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Te-Hao Lee
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Publication number: 20150158723Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: ApplicationFiled: February 17, 2015Publication date: June 11, 2015Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Patent number: 9006015Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: GrantFiled: January 24, 2013Date of Patent: April 14, 2015Assignee: Taiwan Semiconductor Manfacturing Company, Ltd.Inventors: Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Chun-wen Cheng
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Patent number: 8987059Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: GrantFiled: August 9, 2012Date of Patent: March 24, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Publication number: 20140353776Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: ApplicationFiled: June 5, 2014Publication date: December 4, 2014Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Publication number: 20140283369Abstract: A method of forming a structure for a gyroscope sensor includes forming a first dielectric over a substrate and a material layer over the first dielectric layer. A first portion of the material layer is removed to form a recess and a second portion of the material layer is removed to define a first channel between a gyro disk and a frame. A second channel is formed in the substrate corresponding to the first channel, and a portion of the first dielectric is removed to form a second dielectric between the gyro disk and the substrate.Type: ApplicationFiled: June 10, 2014Publication date: September 25, 2014Inventors: Ting-Hau WU, Chun-Ren CHENG, Jiou-Kang LEE, Jung-Huei PENG, Shang-Ying TSAI
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Publication number: 20140206123Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: ApplicationFiled: January 24, 2013Publication date: July 24, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Chun-wen Cheng
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Patent number: 8776600Abstract: A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk. A second light source is configured to provide a second light beam substantially parallel with the first light beam. A second light receiver is configured to receive the second light beam for sensing a vibration in a second direction of the gyro disk. The second direction is different from the first direction.Type: GrantFiled: September 11, 2012Date of Patent: July 15, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Jung-Huei Peng, Shang-Ying Tsai
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Patent number: 8748205Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: GrantFiled: November 30, 2012Date of Patent: June 10, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Patent number: 8563400Abstract: Methods and structures using laser bonding for stacking semiconductor substrates are described. In one embodiment, a method of forming a semiconductor device includes forming a trench in a first substrate, and a bond pad on a second substrate comprising active circuitry. A top surface of the bond pad includes a first material. The first substrate is aligned over the second substrate to align the trench over the bond pad. An electromagnetic beam is directed into the trench to form a bond between the first material on the bond pad and a second material at a bottom surface of the first substrate.Type: GrantFiled: February 4, 2013Date of Patent: October 22, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng
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Publication number: 20130168852Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: ApplicationFiled: August 9, 2012Publication date: July 4, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Patent number: 8455999Abstract: A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the opening, wherein substantially no portion of the organic material is outside of the opening and on the back surface of the wafer; and baking the organic material to cause a contraction of the organic material.Type: GrantFiled: September 22, 2011Date of Patent: June 4, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng
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Patent number: 8367516Abstract: Methods and structures using laser bonding for stacking semiconductor substrates are described. In one embodiment, a method of forming a semiconductor device includes forming a trench in a first substrate, and a bond pad on a second substrate comprising active circuitry. A top surface of the bond pad includes a first material. The first substrate is aligned over the second substrate to align the trench over the bond pad. An electromagnetic beam is directed into the trench to form a bond between the first material on the bond pad and a second material at a bottom surface of the first substrate.Type: GrantFiled: November 13, 2009Date of Patent: February 5, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng
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Patent number: 8362578Abstract: An integrated circuit structure includes a triple-axis accelerometer, which further includes a proof-mass formed of a semiconductor material; a first spring formed of the semiconductor material and connected to the proof-mass, wherein the first spring is configured to allow the proof-mass to move in a first direction in a plane; and a second spring formed of the semiconductor material and connected to the proof-mass. The second spring is configured to allow the proof-mass to move in a second direction in the plane and perpendicular to the first direction. The triple-axis accelerometer further includes a conductive capacitor plate including a portion directly over, and spaced apart from, the proof-mass, wherein the conductive capacitor plate and the proof-mass form a capacitor; an anchor electrode contacting a semiconductor region; and a transition region connecting the anchor electrode and the conductive capacitor plate, wherein the transition region is slanted.Type: GrantFiled: March 31, 2010Date of Patent: January 29, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Shang-Ying Tsai, Jiou-Kang Lee, Jung-Huei Peng