Abstract: A semiconductor package is disclosed, which comprises a substrate, one or more dies on a first side of the substrate, and a plurality of interconnect structures having a first pitch and coupled to a second side of the substrate. The interconnect structures may attach the substrate to a board. The substrate may include a first interconnect layer having a second pitch. The first interconnect layer may be coupled to the one or more dies through second one or more interconnect layers. Third one or more interconnect layers between the first interconnect layer and the interconnect structures may translate the first pitch to the second pitch. The substrate may include a recess on a section of the second side of the substrate. The semiconductor package may further include one or more components within the recess and attached to the second side of the substrate.

Abstract: In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing a Pad on Solder Mask (PoSM) semiconductor substrate package.

Abstract: An electronic package with passive components located between a first substrate and a second substrate. The electronic package can include a first substrate including a device interface for communication with an electronic device. An interposer can be electrically coupled to the first substrate. A second substrate can be offset from the first substrate at a distance. The second substrate can be electrically coupled to the first substrate through the interposer. A passive component can be attached to one of the first substrate or the second substrate. The passive component can be located between the first substrate and the second substrate. A height of the passive component can be is less than the distance between the first substrate and the second substrate. The second substrate can include a die interface configured for communication with a die. The die interface can be communicatively coupled to the passive component.

Abstract: Disclosed embodiments include folded, top-to-bottom interconnects that couple a die side of an integrated-circuit package substrate, to a board as a complement to a ball-grid array for a flip-chip-mounted integrated-circuit die on the die side. The folded, top-to-bottom interconnect is in a molded frame that forms a perimeter around an infield to receive at least one flip-chip IC die. Power, ground and I/O interconnections shunt around the package substrate, and such shunting includes voltage regulation that need not be routed through the package substrate.

Abstract: In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing a Pad on Solder Mask (PoSM) semiconductor substrate package.

Abstract: A molded frame interconnect includes power, ground and signal frame interconnects in a molded mass, that encloses an integrated-circuit package precursor, which is inserted into the frame, and coupled to the frame interconnects by a build-up redistribution layer.

Abstract: An electronic package with passive components located between a first substrate and a second substrate. The electronic package can include a first substrate including a device interface for communication with an electronic device. An interposer can be electrically coupled to the first substrate. A second substrate can be offset from the first substrate at a distance. The second substrate can be electrically coupled to the first substrate through the interposer. A passive component can be attached to one of the first substrate or the second substrate. The passive component can be located between the first substrate and the second substrate. A height of the passive component can be is less than the distance between the first substrate and the second substrate. The second substrate can include a die interface configured for communication with a die. The die interface can be communicatively coupled to the passive component.

Abstract: An electronic device comprises an air core inductor including an electronic semiconductor package including a first portion of the air core inductor internal to the electronic semiconductor package; and an electrically conductive layer arranged on a first external surface of the electronic semiconductor package and electrically connected as a second portion of the air core inductor.

Abstract: A molded frame interconnect includes power, ground and signal frame interconnects in a molded mass, that encloses an integrated-circuit package precursor, which is inserted into the frame, and coupled to the frame interconnects by a build-up redistribution layer.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: A molded frame interconnect includes power, ground and signal frame interconnects in a molded mass, that encloses an integrated-circuit package precursor, which is inserted into the frame, and coupled to the frame interconnects by a build-up redistribution layer.

Abstract: Disclosed embodiments include folded, top-to-bottom interconnects that couple a die side of an integrated-circuit package substrate, to a board as a complement to a ball-grid array for a flip-chip-mounted integrated-circuit die on the die side. The folded, top-to-bottom interconnect is in a molded frame that forms a perimeter around an infield to receive at least one flip-chip IC die. Power, ground and I/O interconnections shunt around the package substrate, and such shunting includes voltage regulation that need not be routed through the package substrate.

Abstract: Semiconductor packages that mitigate warpage and/or other types or mechanical deformation of package substrates are provided. In some embodiments, a package substrate can include a peripheral conductive region having an assembly of rigid conductive members, such as metal layers, metal interconnects, or a combination thereof. The peripheral conductive region can be integrated into the package substrate during the manufacturing of the package substrate. In some implementations, lithographically defined conductive members can be leveraged to form extended conductive layers that can provide increased stiffness compared to nearly cylindrical conductive vias. Non-peripheral conductive regions also can be integrated into a semiconductor package in order to reduce specific patterns of mechanical deformations and/or to provide other functionality, such as electromagnetic interference (EMI) shielding.

Abstract: Electronic device package on package (POP) technology is disclosed. A POP can comprise a first electronic device package including a heat source. The POP can also comprise a second electronic device package disposed on the first electronic device package. The second electronic device package can include a substrate having a heat transfer portion proximate the heat source that facilitates heat transfer from the heat source through a thickness of the substrate. The substrate can also have an electronic component portion at least partially about the heat transfer portion that facilitates electrical communication. In addition, the POP can comprise an electronic component operably coupled to the electronic component portion.

Abstract: Electronic device package stiffener and capacitor technology is disclosed. A combination stiffener and capacitor can include a structural material configured to be coupled to a substrate. The structural material can have a shape configured to provide mechanical support for the substrate. The combination stiffener and capacitor can also include first and second electrodes forming a capacitor. An electronic device package and a package substrate configured to receive the combination stiffener and capacitor are also disclosed.

Abstract: A semiconductor apparatus includes a floating-bridge interconnect that couples two semiconductive devices that are arranged across a middle semiconductive device. The floating-bridge interconnect can be semiconductive material such as a silicon bridge, or it can be an organic bridge. Computing functions required in one of the two semiconductive devices can be off-loaded to any of the floating-bridge interconnect or the other of the two semiconductive devices.

Abstract: Embodiments include semiconductor packages and method of forming the semiconductor packages. A semiconductor package includes a package substrate on a substrate, a die on the package substrate, and a conductive stiffener over the package substrate and the substrate. The conductive stiffener surrounds the package substrate, where the conductive stiffener has a top portion and a plurality of sidewalls, and where the top portion is directly disposed on the package substrate, and the sidewalls are vertically disposed on the substrate. The semiconductor package also includes the substrate that has a plurality of conductive pads, where the conductive pads are conductively coupled to a ground source. The conductive stiffener may conductively couple the package substrate to the conductive pads of the substrate. The top portion may have a cavity that surrounds the die, where the top portion is directly disposed on a plurality of outer edges of the package substrate.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: A semiconductor apparatus includes a floating-bridge interconnect that couples two semiconductive devices that are arranged across a middle semiconductive device. The floating-bridge interconnect can be semiconductive material such as a silicon bridge, or it can be an organic bridge. Computing functions required in one of the two semiconductive devices can be off-loaded to any of the floating-bridge interconnect or the other of the two semiconductive devices.