Patents by Inventor Jiunn-Yi Chu

Jiunn-Yi Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9343620
    Abstract: A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: May 17, 2016
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng
  • Patent number: 8871547
    Abstract: A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: October 28, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Wen-Huang Liu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Trung Tri Doan
  • Patent number: 8759128
    Abstract: A light emitting diode (LED) die includes a semiconductor substrate having an n-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the n-type confinement layer configured to emit electromagnetic radiation, a p-type confinement layer in electrical contact with the multiple quantum well (MQW) layer; multiple light extraction structures on the n-type confinement layer configured to scatter the electromagnetic radiation; and an electrode in a recess embedded in the n-type confinement layer proximate to the light extraction structures. A method of fabrication includes: forming the semiconductor substrate; forming a recess in the n-type confinement layer having sidewalls and a planar bottom surface; forming an electrode in the recess comprising a conductive material conforming to the sidewalls and to the bottom surface of the recess; planarizing the electrode; and forming a plurality of light extraction structures in the n-type confinement layer proximate to the electrode.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: June 24, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Jiunn-Yi Chu, Trung Tri Doan
  • Publication number: 20140154821
    Abstract: A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.
    Type: Application
    Filed: February 10, 2014
    Publication date: June 5, 2014
    Applicant: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: CHEN-FU CHU, WEN-HUANG LIU, JIUNN-YI CHU, CHAO-CHEN CHENG, HAO-CHUN CHENG, FENG-HSU FAN, Trung Tri Doan
  • Publication number: 20140151635
    Abstract: A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.
    Type: Application
    Filed: February 7, 2014
    Publication date: June 5, 2014
    Applicant: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: JIUNN-YI CHU, Chen-Fu Chu, Chao-Chen Cheng
  • Publication number: 20140151630
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.
    Type: Application
    Filed: December 4, 2012
    Publication date: June 5, 2014
    Inventors: Feng-Hsu Fan, Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Jui-Kang Yen
  • Patent number: 8703515
    Abstract: Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: April 22, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Patent number: 8685764
    Abstract: Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: April 1, 2014
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Wen-Huang Liu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Trung Tri Doan
  • Patent number: 8686461
    Abstract: A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: April 1, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng
  • Publication number: 20140051197
    Abstract: A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a substrate; forming an epitaxial structure on the substrate; forming an electrically insulative insulation layer covering the lateral surfaces of the epitaxial structure; forming an electrically non-conductive material on the electrically insulative insulation layer; and forming a mirror on the p-doped layer, with the electrically insulative insulation layer configured to protect the epitaxial structure during formation of the mirror.
    Type: Application
    Filed: October 28, 2013
    Publication date: February 20, 2014
    Applicant: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: FENG-HSU FAN, Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Jui-Kang Yen
  • Patent number: 8614449
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: December 24, 2013
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Feng-Hsu Fan, Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Jui-Kang Yen
  • Publication number: 20130334982
    Abstract: Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
    Type: Application
    Filed: August 26, 2013
    Publication date: December 19, 2013
    Applicant: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: WEN-HUANG LIU, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Patent number: 8546818
    Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: October 1, 2013
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Publication number: 20130248816
    Abstract: A light emitting diode (LED) die includes a semiconductor substrate having an n-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the n-type confinement layer configured to emit electromagnetic radiation, a p-type confinement layer in electrical contact with the multiple quantum well (MQW) layer; multiple light extraction structures on the n-type confinement layer configured to scatter the electromagnetic radiation; and an electrode in a recess embedded in the n-type confinement layer proximate to the light extraction structures. A method of fabrication includes: forming the semiconductor substrate; forming a recess in the n-type confinement layer having sidewalls and a planar bottom surface; forming an electrode in the recess comprising a conductive material conforming to the sidewalls and to the bottom surface of the recess; planarizing the electrode; and forming a plurality of light extraction structures in the n-type confinement layer proximate to the electrode.
    Type: Application
    Filed: March 22, 2012
    Publication date: September 26, 2013
    Inventors: Jiunn-Yi CHU, Trung TRI DOAN
  • Publication number: 20120168716
    Abstract: A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.
    Type: Application
    Filed: December 14, 2011
    Publication date: July 5, 2012
    Applicant: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng
  • Publication number: 20120168714
    Abstract: A vertical light emitting diode (VLED) die includes a first metal having a first surface and an opposing second surface; a second metal on the second surface of the first metal; a p-type semiconductor layer on the first surface of the first metal; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.
    Type: Application
    Filed: January 3, 2011
    Publication date: July 5, 2012
    Applicant: SemiLeds Optoelectronics Co., Ltd.
    Inventors: Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng
  • Publication number: 20120146083
    Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
    Type: Application
    Filed: February 21, 2012
    Publication date: June 14, 2012
    Inventors: Wen-Huang LIU, Chen-Fu CHU, Jiunn-Yi CHU, Chao-Chen CHENG, Hao-Chun CHENG, Feng-Hsu FAN, Yuan-Hsiao CHANG
  • Patent number: 8148733
    Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: April 3, 2012
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Patent number: 8143112
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: March 27, 2012
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
  • Patent number: 8124454
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: February 28, 2012
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Trung Tri Doan, Chuong Anh Tran, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen