Patents by Inventor Jiutao Li
Jiutao Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9552986Abstract: A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.Type: GrantFiled: April 15, 2014Date of Patent: January 24, 2017Assignee: MICRON TECHNOLOGY, INC.Inventors: Jiutao Li, Keith Hampton, Allen McTeer
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Publication number: 20150001673Abstract: A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium oxide or zirconium oxide and the dopant is nitrogen. The dopant can convert the crystal structure of the hafnium oxide or zirconium oxide to a tetragonal structure and increase the dielectric constant of the metal oxide.Type: ApplicationFiled: July 7, 2014Publication date: January 1, 2015Inventors: Jiutao Li, Shuang Meng
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Patent number: 8821697Abstract: Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C.Type: GrantFiled: December 26, 2012Date of Patent: September 2, 2014Assignee: Micron Technology, Inc.Inventors: Jiutao Li, Allen McTeer
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Publication number: 20140224646Abstract: A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.Type: ApplicationFiled: April 15, 2014Publication date: August 14, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Jiutao Li, Keith Hampton, Allen McTeer
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Patent number: 8791519Abstract: A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium oxide or zirconium oxide and the dopant is nitrogen. The dopant can convert the crystal structure of the hafnium oxide or zirconium oxide to a tetragonal structure and increase the dielectric constant of the metal oxide.Type: GrantFiled: May 7, 2010Date of Patent: July 29, 2014Assignee: Micron Technology, Inc.Inventors: Jiutao Li, Shuang Meng
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Patent number: 8263958Abstract: The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to one embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between two glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GexSe100?x composition. According to another embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between chalcogenide glass layers and further having a silver layer above at least one of said chalcogenide glass layers and a conductive adhesion layer above said silver layer.Type: GrantFiled: April 30, 2010Date of Patent: September 11, 2012Assignee: Micron Technology, Inc.Inventors: Kristy A. Campbell, Jiutao Li, Allen McTeer, John T. Moore
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Patent number: 8119440Abstract: A transient index stack having an intermediate transient index layer, for use in an imaging device or a display device, that reduces reflection between layers having different refractive indexes by making a gradual transition from one refractive index to another. Other embodiments include a pixel array in an imaging or display device, an imager system having improved optical characteristics for reception of light by photosensors and a display system having improved optical characteristics for transmission of light by photoemitters. Enhanced reception of light is achieved by reducing reflection between a photolayer, for example, a photosensor or photoemitter, and surrounding media by introducing an intermediate layer with a transient refractive index between the photolayer and surrounding media such that more photons reach the photolayer. The surrounding media can include a protective layer of optically transparent media.Type: GrantFiled: May 19, 2010Date of Patent: February 21, 2012Assignee: Micron Technology, Inc.Inventors: Jiutao Li, Jin Li
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Publication number: 20110180695Abstract: A microlens structure includes lower lens layers on a substrate. A sputtered layer of glass, such as silicon oxide, is applied over the lower lens layers at an angle away from normal to form upper lens layers that increase the effective focal length of the microlens structure. The upper lens layers can be deposited in an aspherical shape with radii of curvature longer than the lower lens layers. As a result, small microlenses can be provided with longer focal length. The microlenses are arranged in arrays for use in imaging devices.Type: ApplicationFiled: April 8, 2011Publication date: July 28, 2011Applicant: ROUND ROCK RESEARCH, LLCInventors: Jin Li, Jiutao Li, Ulrich Boettiger, Loriston Ford
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Patent number: 7964436Abstract: The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.Type: GrantFiled: October 10, 2008Date of Patent: June 21, 2011Assignee: Round Rock Research, LLCInventors: Jiutao Li, Allen McTeer, Gregory Herdt, Trung T. Doan
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Publication number: 20110014115Abstract: Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C.Type: ApplicationFiled: July 21, 2010Publication date: January 20, 2011Inventors: Jiutao Li, Allen McTeer
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Patent number: 7863597Abstract: A method of forming a non-volatile resistance variable device includes forming a first conductive electrode material on a substrate. A metal doped chalcogenide comprising material is formed over the first conductive electrode material. Such comprises the metal and AxBy, where “B” is selected from S, Se and Te and mixtures thereof, and where “A” comprises at least one element which is selected from Group 13, Group 14, Group 15, or Group 17 of the periodic table. In one aspect, the chalcogenide comprising material is exposed to and HNO3 solution. In one aspect the outer surface is oxidized effective to form a layer comprising at least one of an oxide of “A” or an oxide of “B”. In one aspect, a passivating material is formed over the metal doped chalcogenide comprising material. A second conductive electrode material is deposited, and a second conductive electrode material of the device is ultimately formed therefrom.Type: GrantFiled: January 24, 2008Date of Patent: January 4, 2011Assignee: Micron Technology, Inc.Inventors: Kristy A. Campbell, Terry L. Gilton, John T. Moore, Jiutao Li
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Publication number: 20100255190Abstract: A transient index stack having an intermediate transient index layer, for use in an imaging device or a display device, that reduces reflection between layers having different refractive indexes by making a gradual transition from one refractive index to another. Other embodiments include a pixel array in an imaging or display device, an imager system having improved optical characteristics for reception of light by photosensors and a display system having improved optical characteristics for transmission of light by photoemitters. Enhanced reception of light is achieved by reducing reflection between a photolayer, for example, a photosensor or photoemitter, and surrounding media by introducing an intermediate layer with a transient refractive index between the photolayer and surrounding media such that more photons reach the photolayer. The surrounding media can include a protective layer of optically transparent media.Type: ApplicationFiled: May 19, 2010Publication date: October 7, 2010Inventors: Jiutao Li, Jin Li
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Patent number: 7799180Abstract: Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C.Type: GrantFiled: November 14, 2003Date of Patent: September 21, 2010Assignee: Micron Technology, Inc.Inventors: Jiutao Li, Allen McTeer
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Publication number: 20100219391Abstract: The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to one embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between two glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GexSe100?x composition. According to another embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between chalcogenide glass layers and further having a silver layer above at least one of said chalcogenide glass layers and a conductive adhesion layer above said silver layer.Type: ApplicationFiled: April 30, 2010Publication date: September 2, 2010Inventors: Kristy A. Campbell, Jiutao Li, Allen McTeer, John T. Moore
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Publication number: 20100213574Abstract: A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium oxide or zirconium oxide and the dopant is nitrogen. The dopant can convert the crystal structure of the hafnium oxide or zirconium oxide to a tetragonal structure and increase the dielectric constant of the metal oxide.Type: ApplicationFiled: May 7, 2010Publication date: August 26, 2010Applicant: MICRON TECHNOLOGY, INC.Inventors: Jiutao Li, Shuang Meng
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Patent number: 7763499Abstract: An improved imaging device having a pixel arrangement featuring a multilayer light shield. The multilayer light shield includes stacked layers of light-shielding and light-transparent material. The light-transparent material, such as a dielectric, is selected to have a stress, such as a tensile stress, that offsets the stress, such as a compressive stress, of the light shielding material. Without the stress offset, the high compressive stress of the refractory metal could damage the integrity of the nearby silicon. The refractory metal is capable of withstanding the high temperatures associated with front end CMOS processing. The laminate structure allows the light shield to be placed close to the pixel surface. The light-transparent material has a thickness equal to about one-quarter wavelength of the light to be blocked, to act as an anti-reflective coating. An aperture in the light shield exposes the active region of the pixel's photoconversion device.Type: GrantFiled: May 8, 2008Date of Patent: July 27, 2010Assignee: Micron Technology, Inc.Inventors: Jiutao Li, Jin Li
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Patent number: 7745900Abstract: A transient index stack having an intermediate transient index layer, for use in an imaging device or a display device, that reduces reflection between layers having different refractive indexes by making a gradual transition from one refractive index to another. Other embodiments include a pixel array in an imaging or display device, an imager system having improved optical characteristics for reception of light by photosensors and a display system having improved optical characteristics for transmission of light by photoemitters. Enhanced reception of light is achieved by reducing reflection between a photolayer, for example, a photosensor or photoemitter, and surrounding media by introducing an intermediate layer with a transient refractive index between the photolayer and surrounding media such that more photons reach the photolayer. The surrounding media can include a protective layer of optically transparent media.Type: GrantFiled: August 24, 2005Date of Patent: June 29, 2010Assignee: Micron Technology, Inc.Inventors: Jiutao Li, Jin Li
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Patent number: 7733567Abstract: A microlens has a surface with an effective index of refraction close to the index of air to reduce reflection caused by change in indices of refraction from microlens to air. The microlens having an index of refraction approximately the same as that of air is obtained by providing a rough or bumpy lens-air surface on the microlens. Features protrude from the surface of a microlens to create the rough surface and preferably have a length of greater or equal to a wavelength of light and a width of less than a sub-wavelength of light, from about 1/10 to ¼ of the wavelength of light. The features may be of any suitable shape, including but not limited to triangular, cylindrical, rectangular, trapezoidal, or spherical and may be formed by a variety of suitable processes, including but not limited to mask and etching, lithography, spray-on beads, sputtering, and growing.Type: GrantFiled: August 11, 2005Date of Patent: June 8, 2010Assignee: Aptina Imaging CorporationInventors: Jiutao Li, Jin Li, Ulrich C. Boettiger
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Patent number: 7728330Abstract: A CMOS imager having reduced dark current and methods of forming the same. A nitrided gate oxide layer having approximately twice the thickness of a typical nitrided gate oxide is provided over the photosensor region of a CMOS imager. The gate oxide layer provides an improved contaminant barrier to protect the photosensor, contains the p+ implant distribution in the surface of the p+ pinned region of the photosensor, and reduces photon reflection at the photosensor surface, thereby decreasing dark current.Type: GrantFiled: August 24, 2005Date of Patent: June 1, 2010Assignee: Aptina Imaging CorporationInventor: Jiutao Li
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Patent number: RE44637Abstract: A photon collector has a reflecting metal layer to increase photon collection efficiency in a solid state imaging sensor. The reflecting metal layer reflects incident light internally to a photosensor. A plurality of photon collectors is formed in a wafer substrate over an array of photosensors. The photon collector is formed in an opening in an insulating layer provided over each photosensor.Type: GrantFiled: April 15, 2010Date of Patent: December 10, 2013Assignee: Round Rock Research, LLCInventors: Jin Li, Jiutao Li