Abstract: Processes of identifying small pressure irregularities in a system used for continuous plasma deposition are provided. Sensitive light scattering is used to detect the presence of nucleated particles in a detection area that is outside the plasma region of high electric field whereby the presence of the particles indicates a pressure abnormality in the plasma deposition chamber. The pressure of the plasma deposition chamber is then adjusted to reduce or eliminate the presence of particles within the detection area and to optimize deposition of material on a substrate.

Abstract: A system and method for measuring the velocity of gas flow between multiple plasma deposition chambers is provided. A passage atmospherically linking two plasma processing chambers conducts a gas flow therebetween due to differential pressures within the respective chambers. The gas flow velocity is measured by a linear or non-linear ultrasonic energy acoustic path between two transducers located exteriorly to the chambers using the difference in transit time in a forward and reverse direction due to the velocity of gas in the passage. The pressure of process gas in one or more chambers is adjustable based on the measured velocity of gas flow in the passage.

Abstract: A system for the continuous deposition of a semiconductor material onto one or more webs of substrate material which are advanced therethrough includes a web transport system having a plurality of web support assemblies. Each web support assembly includes a base having a primary support arm pivotally mounted thereto so as to be displaceable from a first position to a second position. The support includes a first biasing member in mechanical communication with the primary support arm. The first biasing member operates to impart a first biasing force to the primary support arm so as to move it from its first position to its second position. The support includes a dancer arm which is pivotally mounted to the primary support arm so as to be displaceable from a first position to a second position relative to the primary support arm. The system further includes a second biasing member in mechanical communication with the dancer arm.

Abstract: A web support assembly for a moving web of substrate material includes a base having a primary support arm pivotally mounted thereto so as to be displaceable from a first position to a second position. The web support assembly includes a first biasing member in mechanical communication with the primary support arm. The first biasing member operates to impart a first biasing force to the primary support arm so as to move it from its first position to its second position. The system includes a dancer arm which is pivotally mounted to the primary support arm so as to be displaceable from a first position to a second position relative primary support arm. The web support assembly further includes a second biasing member in mechanical communication with the dancer arm. The second biasing member operates to impart a second biasing force to the dancer arm so as to move it from its first position to its second position. A roller is rotatably supported on the dancer arm.

Abstract: A semiconductor device is provided in accordance with an exemplary embodiment. The semiconductor device includes a semiconductive layer disposed over a multi-layer substrate. The multi-layer substrate includes a plurality of dissimilar regions, one of which is an inner magnetic region and the remainder of the multi-layer substrate is thermally symmetrical about the inner magnetic region.

Abstract: Deposition apparatus for uniformly forming material on a substrate in accordance with an exemplary embodiment is provided. The deposition apparatus includes an energy source, an electrode in a facing, spaced relationship with respect to the substrate, and interface structure joined to the electrode. The interface structure is configured to electrically couple energy from the energy source through and about the interface structure to the electrode for formation of a substantially uniform electric field between the electrode and a predetermined area of the substrate when the interface structure is supplied with energy from the energy source.

Abstract: A apparatus for depositing one or more thin film layers on one or more continuous web or discrete substrates. The apparatus includes a pay-out unit for dispensing one or a plurality of webs, a deposition unit that deposits a series of one or more thin film layers thereon, and a take-up unit that receives and stores the webs following deposition. In a preferred embodiment, deposition occurs through plasma enhanced chemical vapor deposition in which a plasma region is formed between a cathode in the deposition unit and one or more vertically-oriented webs. The instant deposition apparatus includes a support system for guiding and stabilizing the transport of one or more webs or substrates through the deposition chambers. The support system includes a magnetic guidance assembly and an edge-stabilizing assembly that operate to inhibit perturbations of the motion of a web or substrate in directions other than the direction of transport through the apparatus.

Abstract: The present invention discloses a fire resistant laminate and incorporating the laminate into an encapsulant for a photovoltaic module that may be used in a photovoltaic building material. More particularly, the present invention relates to fire resistant encapsulant that may be used in a triple junction amorphous silicon photovoltaic module that is fire resistant on a wide variety of buildings roofs, including residential housing, and that is flexible and lightweight. A fire resistant additive, such as solid glass spheres, may be added to encapsulant material to produce a fire resistant, cut resistant, lightweight photovoltaic device.

Abstract: A method of heating in a vacuum atmosphere in the presence of a plasma, comprises the following steps: a) providing infrared radiation means (16) in a vacuum chamber (10); b) providing a first electrical conductor (18) to the infrared radiation means (16); c) providing a second electrical conductor (20) from the infrared radiation means (16); d) putting an electrical voltage over said infrared radiation means (16); e) preventing the first conductor (18) and the second conductor (20) from having an electrical voltage above +55 Volt. The advantage is that arcing is avoided.

Abstract: Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure, more particularly between atmosphere and a vacuum. The gas gate includes a cylinder within a housing situated between the regions of differing gaseous pressure, wherein the gas gate provides for choke mode transonic flow of air leaks between the regions. A web of substrate material is adapted to move between the regions with at least one roller in a first region and at least one roller in a second region. The rollers are positioned to create sufficient tension as the web advances over the top peripheral portion of the cylinder between the two regions or under the bottom peripheral portion of the cylinder between the two regions.

Abstract: Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure, more particularly between atmosphere and a vacuum. The gas gate includes a cylinder within a housing situated between the regions of differing gaseous pressure. A web of substrate material is adapted to move between the regions with at least one roller in the first region and at least one roller in the second region. The rollers are positioned to create sufficient tension as the web advances over the top peripheral portion of the cylinder between the two regions or under the bottom peripheral portion of the cylinder between the two regions. In an exemplary embodiment, the gas gate is characterized by the height of the passageway between the top plate of the housing and web of substrate advancing over the top peripheral portion of the cylinder and the height of the passageway between the bottom plate of the housing and the bottom peripheral portion of the cylinder.

Abstract: A high throughput apparatus for depositing one or more thin film layers on a plurality of continuous web substrates. The apparatus includes a pay-out unit for dispensing a plurality of webs, a deposition unit that receives the plurality of webs and deposits a series of one or more thin film layers thereon, and a take-up unit that receives and stores the plurality of webs upon deposition of the thin film layers. High throughput is achieved through the simultaneous deposition of thin films on a plurality of web substrates. In a preferred embodiment, deposition occurs through plasma enhanced chemical vapor deposition in which a plasma region is formed between a cathode in the deposition unit and the plurality of webs. Deposition precursors are introduced into the plasma region and are transformed to reactive species that form a thin film layer on the plurality of web substrates.

Abstract: Apparatus and method for the vacuum deposition of at least two different layers of thin film material onto a substrate by two different vacuum deposition processes. Also disclosed is a novel linear applicator for using microwave enhanced CVD to uniformly deposit a thin film of material over an elongated substrate.

Abstract: A microwave apparatus for sustaining a substantially uniform plasma over a relatively large area. The microwave apparatus comprises a vacuum vessel for sustaining the plasma in a plasma region thereof. The apparatus further comprises a nonevanescent microwave applicator having means for controlling the cutoff frequency thereof. The microwave applicator may comprise a waveguide and a volume of dielectric material disposed within the waveguide. Alternately, the microwave applicator may comprise ridge waveguide.

Abstract: Apparatus and method for the vacuum deposition of at least two different layers of thin film material onto a substrate by two different vacuum deposition processes. Also disclosed is a novel linear applicator for using microwave enhanced CVD to uniformly deposit a thin film of material over an elongated substrate.

Abstract: A novel high speed, high quality plasma enhanced surface modification or CVD thin-film deposition method and apparatus. The invention employs both microwave and e-beam energy for creation of a plasma of excited species which modify the surface of substrates or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system to introduce the reacting species to the plasma. This gas jet system allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials.

Abstract: A photovoltaic module which includes at least one photovoltaic cell which is encapsulated in a non-reacted, injection molded polymeric material, thereby forming an environmental seal around the cell. The photovoltaic cell(s) are incorporated into a photovoltaic panel having front and back sides and edges forming a perimeter, and also includes means for external electrical connection to the photovoltaic cell. The non-reacted injection molded polymeric material encapsulating the panel may form useful structures, such as shingles, blocks, cases, or boxes.

Abstract: Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure. The gas gate includes a narrow, elongated passageway through which substrate material is adapted to move between said regions and inlet means for introducing a flow of non-contaminating sweep gas into a central portion of said passageway. The gas gate is characterized in that the height of the passageway and the flow rate of the sweep gas therethrough provides for transonic flow of the sweep gas between the inlet means and at least one of the two interconnected regions, thereby effectively isolating one region, characterized by one composition and pressure, from another region, having a differing composition and/or pressure, by decreasing the mean-free-path length between collisions of diffusing species within the transonic flow region. The gas gate preferably includes a manifold at the juncture point where the gas inlet means and the passageway interconnect.

Abstract: A method for the low temperature, microwave enhanced, chemical vacuum deposition of thin film material onto a surface of a hollow member by creating a sub-atmospheric pressure condition adjacent the surface to be coated while maintaining the applicator through which microwave energy is introduced at substantially atmospheric pressure.

Abstract: A window assembly for transmitting relatively high power microwave energy from a waveguide, held at substantially atmospheric pressure levels, into a microwave reaction chamber at sub-atmospheric pressure levels. The window assembly provides for the transmission of microwave energy to generate a glow discharge plasma without suffering from catastrophic failure as a result of excessive temperature and pressure conditions.