Abstract: The present invention relates to an illumination system for microlithography, especially for wavelengths ?193 nm, especially preferably for EUV lithography for illuminating a field in a field plane with at least one optical integrator which splits up a light bundle emitted by a light source into a plurality of light channels each having a light intensity, characterized in that a filter is provided in the light path from the light source to the field plane, with the filter comprising filter elements which are configured in such a way that the light intensity of at least one light channel is reduced in the light path after the filter element.

Abstract: There is provided an illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength ?193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.

Abstract: There is provided a collector. The collector includes a first mirror shell positioned inside a second mirror shell that has a chamfered end.

Abstract: There is provided an illumination system. the illumination system includes (a) a source of light having a wavelength of less than or equal to 193 nm, and (b) an optical element in a path of the light, having a first raster element, a second raster element, a third raster element and a fourth raster element situated thereon. The second raster element is adjacent to the first raster element, and located a first distance from the first raster element. The fourth raster element is adjacent to the third raster element, and located a second distance from the third raster element. The second distance is different from the first distance.

Abstract: Collectors are disclosed. The collectors can be for illumination systems with a wavelength ?193 nm, including ?126 nm, and the EUV range. The collectors can serve to receive the light rays emitted from a light source and to illuminate an area in a plane. The collectors can include at least a first mirror shell or a first shell segment as well as a second mirror shell or a second shell segment receiving the light and providing a first illumination and a second illumination in a plane which is located in the light path downstream of the collector. An illumination systems are also disclosed. The illumination systems can be equipped with a collector. Projection exposure apparatuses are also disclosed. The projection exposure apparatuses can include an illumination system. Methods for the manufacture of microstructures by photographic exposure are also disclosed.

Abstract: An illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength especially ?193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.

Abstract: The invention relates to an illumination system with a light source emitting radiation with a wavelength ?193 nm, especially radiation in the EUV wavelength range. The invention comprises a first facetted optical element in a first plane with at least a first and second field raster element which receive the light of the light source and divide the same into a first and second bundle of light; a optical component comprising at least a second facetted optical element in a second plane with a first and second pupil raster element, with the first light bundle impinging upon the first pupil raster element and the second light bundle impinging upon the second pupil raster element, with an attenuator being arranged in or close to the second plane or a plane conjugated to the second plane at least in the first light bundle extending from the first field raster element to the first pupil raster element, wherein the optical component images the first and second field raster element into a field plane.

Abstract: There is provided an optical system including an optical element having a first used area and a second used area on which impinge rays of a light bundle, and a device for moving the optical element between a first position and a second position. The light bundle impinges on the first used area when the optical element is in the first position, and light bundle impinges on the second used area when the optical element is in the second position.

Abstract: There is provided a system that includes a first optical sub-system contained in a first space, and a second optical sub-system contained in a second space. The first and said second spaces are separated by a structure selected from the group consisting of a diaphragm and a valve.

Abstract: There is provided a projection exposure system operable in a scanning mode along a scanning direction. The projection exposure system includes a collector that receives light having a wavelength ?193 nm and illuminates a region in a plane. The plane is defined by a local coordinate system having a y-direction parallel to the scanning direction and an x-direction perpendicular to the scanning direction. The collector includes (a) a first mirror shell, (b) a second mirror shell within the first mirror shell, and (c) a fastening device for fastening the first and second mirror shells. The mirror shells are substantially rotational symmetric about a common rotational axis. The fastening device has a support spoke that extends in a radial direction of the mirror shells, and the support spoke, when projected into the plane, yields a projection that is non-parallel to the y-direction.

Abstract: There is provided a collector. The collector includes a first mirror shell positioned inside a second mirror shell that has a chamfered end.

Abstract: There is provided, a system that includes (a) a source of light having a wavelength of less than or equal to about 193 nm, (b) an optical element having a region for directing the light, (c) an arrangement for cleaning the region, and (d) a chamber to accommodate the region during the cleaning.

Abstract: There is provided a collector for illumination systems for light having a wavelength ?193 nm comprising. The collector includes (a) a first mirror shell adjacent to, and positioned inside of, a second mirror shell around a common axis of rotation, in which the first and second mirror shells are rotationally symmetric, and (b) a component in a region between the first and second mirror shells. The collector is for receiving the light from a light source via an object-side aperture and for illuminating an area in an image-side plane, and the region is not used by the light.

Abstract: The present invention relates to an illumination system for microlithography, especially for wavelengths ?193 nm, especially preferably for EUV lithography for illuminating a field in a field plane with at least one optical integrator which splits up a light bundle emitted by a light source into a plurality of light channels each having a light intensity, characterized in that a filter is provided in the light path from the light source to the field plane, with the filter comprising filter elements which are configured in such a way that the light intensity of at least one light channel is reduced in the light path after the filter element.

Abstract: This invention relates to an illumination system for scanning lithography especially for wavelengths ?193 nm, particularly EUV lithography, for the illumination of a slit, comprising at least one field mirror or at least one field lens and being characterized in that at least one of the field mirror(s) or the field lens(es) has (have) an aspheric shape.

Abstract: There is provided a projection exposure system operable in a scanning mode along a scanning direction. The projection exposure system includes a collector that receives light having a wavelength 193 nm and illuminates a region in a plane. The plane is defined by a local coordinate system having a y-direction parallel to the scanning direction and an x-direction perpendicular to the scanning direction. The collector includes (a) a first mirror shell, (b) a second mirror shell within the first mirror shell, and (c) a fastening device for fastening the first and second mirror shells. The mirror shells are substantially rotational symmetric about a common rotational axis. The fastening device has a support spoke that extends in a radial direction of the mirror shells, and the support spoke, when projected into the plane, yields a projection that is non-parallel to the y-direction.

Abstract: There is provided an illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength ?193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.

Abstract: This invention relates to an Ilumination system for scanning lithography especially for wavelengths?193 nm, particularly EUV lithography, for the illumination of a slit, comprising at least one field mirror or at least one field lens and being characterized in that at least one of the field mirror(s) or the field lens(es) has (have) an aspheric shape.

Abstract: An illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength especially ?193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.

Abstract: There is provided a projection exposure system operable in a scanning mode along a scanning direction. The projection exposure system includes a collector that receives light having a wavelength ?193 nm and illuminates a region in a plane. The plane is defined by a local coordinate system having a y-direction parallel to the scanning direction and an x-direction perpendicular to the scanning direction. The collector includes (a) a first mirror shell, (b) a second mirror shell within the first mirror shell, and (c) a fastening device for fastening the first and second mirror shells. The mirror shells are substantially rotational symmetric about a common rotational axis. The fastening device has a support spoke that extends in a radial direction of the mirror shells, and the support spoke, when projected into the plane, yields a projection that is non-parallel to the y-direction.