Patents by Inventor Joachim Krumrey
Joachim Krumrey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10283634Abstract: A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.Type: GrantFiled: September 7, 2017Date of Patent: May 7, 2019Assignee: Infineon Technologies Austria AGInventors: Oliver Haeberlen, Joachim Krumrey, Franz Hirler, Walter Rieger
-
Publication number: 20170373180Abstract: A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.Type: ApplicationFiled: September 7, 2017Publication date: December 28, 2017Applicant: Infineon Technologies Austria AGInventors: Oliver Haeberlen, Joachim Krumrey, Franz Hirler, Walter Rieger
-
Patent number: 9793391Abstract: A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.Type: GrantFiled: November 9, 2015Date of Patent: October 17, 2017Assignee: Infineon Technologies Austria AGInventors: Oliver Haeberlen, Joachim Krumrey, Franz Hirler, Walter Rieger
-
Publication number: 20160233331Abstract: A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.Type: ApplicationFiled: November 9, 2015Publication date: August 11, 2016Applicant: Infineon Technologies Austria AGInventors: Oliver Haeberlen, Joachim Krumrey, Franz Hirler, Walter Rieger
-
Patent number: 9202909Abstract: A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.Type: GrantFiled: March 28, 2013Date of Patent: December 1, 2015Assignee: Infineon Technologies Austria AGInventors: Oliver Haeberlen, Joachim Krumrey, Franz Hirler, Walter Rieger
-
Patent number: 8889512Abstract: A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric. A dielectric layer is formed on the first field electrode in the at least one first trench, including depositing a dielectric material on a first side of the semiconductor body and on the field plate at a higher deposition rate than on sidewalls of the at least one first trench.Type: GrantFiled: October 26, 2011Date of Patent: November 18, 2014Assignee: Infineon Technologies Austria AGInventors: Joachim Krumrey, Gerhard Noebauer, Martin Poelzl, Marc Probst
-
Patent number: 8618598Abstract: A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.Type: GrantFiled: July 15, 2011Date of Patent: December 31, 2013Assignee: Infineon Technologies Austria AGInventors: Oliver Haeberlen, Joachim Krumrey, Franz Hirler, Walter Rieger
-
Patent number: 8581371Abstract: A connection element is arranged on a connection area of a semiconductor component. The connection element includes at least one bonding wire portion fixed on the connection area. The connection area is covered by an electrically conductive material, the fixed bonding wire portion being surrounded or embedded by the electrically conductive material.Type: GrantFiled: July 20, 2006Date of Patent: November 12, 2013Assignee: Infineon Technologies AGInventors: Khalil Hosseini, Joachim Krumrey, Joachim Mahler, Gerhard Noebauer
-
Publication number: 20130228858Abstract: A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.Type: ApplicationFiled: March 28, 2013Publication date: September 5, 2013Applicant: Infineon Technologies Austria AGInventors: Oliver Haeberlen, Joachim Krumrey, Franz Hirler, Walter Rieger
-
Publication number: 20130140673Abstract: A semiconductor device and method are disclosed. One embodiment provides a semiconductor die with a first n-type channel FET and a second n-type channel FET. A source of the first n-type channel FET and a drain of the second n-type channel FET are electrically coupled to at least one contact area at a first side. A drain of the first n-type channel FET, a gate of the first n-type channel FET, a source of the second n-type channel FET and the gate of the second n-type channel FET are electrically coupled to contact areas at a second side. Contact areas of the first n-type channel FET and the second n-type channel FET are electrically separated from each other.Type: ApplicationFiled: June 4, 2012Publication date: June 6, 2013Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Oliver Haeberlen, Walter Rieger, Martin Vielemeyer, Lutz Goergens, Martin Poelzl, Milko Paolucci, Johannes Schoiswohl, Joachim Krumrey
-
Patent number: 8362551Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.Type: GrantFiled: October 11, 2011Date of Patent: January 29, 2013Assignee: Infineon Technologies Austria AGInventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlein, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey
-
Patent number: 8193559Abstract: One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides a semiconductor die with a first n-type channel FET and a second n-type channel FET. A source of the first n-type channel FET and a drain of the second n-type channel FET are electrically coupled to at least one contact area at a first side of the semiconductor die, respectively. A drain of the first n-type channel FET, a gate of the first n-type channel FET, a source of the second n-type channel FET and the gate of the second n-type channel FET are electrically coupled to contact areas at a second side of the semiconductor die opposite to the first side, respectively. The contact areas of the drain of the first n-type channel FET, of the gate of the first n-type channel FET, of the source of the second n-type channel FET and of the gate of the second n-type channel FET are electrically separated from each other, respectively.Type: GrantFiled: April 7, 2011Date of Patent: June 5, 2012Assignee: Infineon Technologies Austria AGInventors: Oliver Haeberlen, Walter Rieger, Martin Vielemeyer, Lutz Goergens, Martin Poelzl, Milko Paolucci, Johannes Schoiswohl, Joachim Krumrey, Sonja Krumrey, legal representative
-
Publication number: 20120040505Abstract: A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric. A dielectric layer is formed on the first field electrode in the at least one first trench, including depositing a dielectric material on a first side of the semiconductor body and on the field plate at a higher deposition rate than on sidewalls of the at least one first trench.Type: ApplicationFiled: October 26, 2011Publication date: February 16, 2012Applicant: Infineon Technologies Austria AGInventors: Joachim Krumrey, Gerhard Noebauer, Martin Poelzl, Marc Probst
-
Publication number: 20120025303Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.Type: ApplicationFiled: October 11, 2011Publication date: February 2, 2012Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlen, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey
-
Patent number: 8072028Abstract: A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric. A dielectric layer is formed on the first field electrode in the at least one first trench, including depositing a dielectric material on a first side of the semiconductor body and on the field plate at a higher deposition rate than on sidewalls of the at least one first trench.Type: GrantFiled: October 26, 2009Date of Patent: December 6, 2011Assignee: Infineon Technologies Austria AGInventors: Joachim Krumrey, Gerhard Noebauer, Martin Poelzl, Marc Probst
-
Publication number: 20110272761Abstract: A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.Type: ApplicationFiled: July 15, 2011Publication date: November 10, 2011Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Oliver Haeberlen, Joachim Krumrey, Franz Hirler, Walter Rieger
-
Patent number: 8044459Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.Type: GrantFiled: November 10, 2008Date of Patent: October 25, 2011Assignee: Infineon Technologies Austria AGInventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlen, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey
-
Publication number: 20110241170Abstract: One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides a semiconductor die with a first n-type channel FET and a second n-type channel FET. A source of the first n-type channel FET and a drain of the second n-type channel FET are electrically coupled to at least one contact area at a first side of the semiconductor die, respectively. A drain of the first n-type channel FET, a gate of the first n-type channel FET, a source of the second n-type channel FET and the gate of the second n-type channel FET are electrically coupled to contact areas at a second side of the semiconductor die opposite to the first side, respectively. The contact areas of the drain of the first n-type channel FET, of the gate of the first n-type channel FET, of the source of the second n-type channel FET and of the gate of the second n-type channel FET are electrically separated from each other, respectively.Type: ApplicationFiled: April 7, 2011Publication date: October 6, 2011Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Oliver Haeberlen, Walter Rieger, Martin Vielemeyer, Lutz Goergens, Martin Poelzl, Milko Paolucci, Johannes Schoiswohl, Joachim Krumrey, Sonja Krumrey
-
Patent number: 8022474Abstract: A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.Type: GrantFiled: September 30, 2008Date of Patent: September 20, 2011Assignee: Infineon Technologies Austria AGInventors: Oliver Haeberlen, Joachim Krumrey, Franz Hirler, Walter Rieger
-
Patent number: 7943955Abstract: One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides one semiconductor die with a first and a second FET. One of source/drain of the first FET and one of source/drain of the second FET are electrically coupled to at least one contact area at a first side of one semiconductor die, respectively. The other one of source/drain of the first FET, a gate of the first FET, the other one of source/drain of the second FET and the gate of the second FET are electrically coupled to contact areas at a second side of the one semiconductor die opposite to the first side, respectively. The contact areas of the other one of source/drain of the first FET, of the gate of the first FET, of the other one of source/drain of the second FET and of the gate of the second FET are electrically separated from each other, respectively.Type: GrantFiled: January 27, 2009Date of Patent: May 17, 2011Assignee: Infineon Technologies Austria AGInventors: Oliver Haeberlen, Walter Rieger, Lutz Goergens, Martin Poelzl, Johannes Schoiswohl, Joachim Krumrey