Abstract: A vertical fin field-effect transistor. The transistor has a semiconductor fin, an n-doped source region, an n-doped drift region, an n-doped channel region in the semiconductor fin situated vertically between the source region and the drift region, a gate region horizontally adjacent to the channel region, a gate dielectric electrically insulating the gate region from the channel region, a boundary surface between the gate dielectric and the channel region having negative boundary surface charges, a p-doped gate shielding region situated below the gate region so that, given the vertical projection, the gate shielding region is situated within a surface limited by the gate dielectric, a source contact electrically conductively connected to the source region, and an electrically conductive region between the gate region and the p-doped gate shielding region. The p-doped gate shielding region is electrically conductively connected to the source contact by the electrically conductive region.

Abstract: A vertical field-effect transistor. The vertical field-effect transistor includes: a drift region, a semiconductor fin on or above the drift region, and a source/drain electrode on or above the semiconductor fin. The semiconductor fin includes at least one concave side wall in the region between the drift region and the source/drain electrode.

Abstract: A device for processing at least one semiconductor substrate. The device includes: a reactor with a wall which encloses a reaction chamber; a closing structure for loading the reaction chamber with at least one semiconductor substrate and for unloading the at least one semiconductor substrate from the reaction chamber and for hydrofluoric acid-tight closure of the reaction chamber; and a heating device designed to establish at least one specified temperature in at least one temperature range in the reaction chamber. The device further includes: a gas inlet designed to supply hydrofluoric acid in vapor form to the reaction chamber, and a gas outlet designed to remove hydrofluoric acid in vapor form from the reaction chamber; and a gas supply system which is coupled to the gas inlet and is designed to supply hydrofluoric acid in vapor form to the gas inlet at the specified temperature.

Abstract: A semiconductor device having a substrate, and at least one contact, situated on and/or above a surface of the substrate, having at least one layer made of a conductive material, the conductive material including at least one metal. The layer made of the conductive material is sputtered on, and has tear-off marks on at least one outer side area between an outer base area facing the surface and an outer contact area facing away from the surface. A manufacturing method for a semiconductor device having at least one contact is also described.

Abstract: A micromechanical actuator includes a shaft and at least a first driving mechanism. The shaft and the first driving mechanism are connected by a first joint.

Abstract: The invention relates to a method for capping a MEMS wafer (1), in particular a sensor and/or actuator wafer, with at least one mechanical functional element (10). According to the invention, it is provided that the movable mechanical functional element (10) is fixed by means of a sacrificial layer (14), and that a cap layer (19) is applied to, in particular epitaxially grown onto, the sacrificial layer (14) and/or to at least one intermediate layer (17) applied to the sacrificial layer (14). The invention also relates to a capped MEMS wafer (1).

Abstract: A semiconductor device having a substrate, and at least one contact, situated on and/or above a surface of the substrate, having at least one layer made of a conductive material, the conductive material including at least one metal. The layer made of the conductive material is sputtered on, and has tear-off marks on at least one outer side area between an outer base area facing the surface and an outer contact area facing away from the surface. A manufacturing method for a semiconductor device having at least one contact is also described.

Abstract: The invention relates to a method for capping a MEMS wafer (1), in particular a sensor and/or actuator wafer, with at least one mechanical functional element (10). According to the invention, it is provided that the movable mechanical functional element (10) is fixed by means of a sacrificial layer (14), and that a cap layer (19) is applied to, in particular epitaxially grown onto, the sacrificial layer (14) and/or to at least one intermediate layer (17) applied to the sacrificial layer (14). The invention also relates to a capped MEMS wafer (1).

Abstract: An exhaust gas treatment device for a CVD device for the deposition of silicon-rich nitride in a CVD process, in particular an LPCVD process. An aftertreatment chamber is provided into which ammonia gas can be metered. In addition, a CVD device and an exhaust gas treatment method are described.

Abstract: A method for etching silicon carbide, a mask being produced on a silicon carbide layer, the unmasked areas of the silicon carbide layer being etched using a fluorine-containing compound, which is selected from the group including interhalogen compounds of fluorine and/or xenon difluoride. The use of chlorine trifluoride, chlorine pentafluoride, and/or xenon difluoride for structuring silicon carbide layers covered with masks containing silicon dioxide and/or silicon oxide carbide; a structured silicon carbide layer obtained by the method, and a microstructured electromechanical component or a microelectronic component including a structured silicon carbide layer obtained by the method.

Abstract: A reactor for carrying out an etching method for a stack of masked wafers, using an etching gas, preferably chlorotrifluoride (ClF3), wherein the reactor includes a device for carrying out a plasma process. An etching method for masked wafers, using an etching gas, preferably chlorotrifluoride (ClF3), the wafer being pretreated in a plasma process before an etching process, wherein the wafer pretreatment and the etching process for a stack of wafers take place in a reactor chamber.

Abstract: A method for producing a device which is suitable for delivering a substance into or through the skin and includes an array of microneedles developed out of an Si semiconductor substrate, the microneedles being affixed on and/or inside a flexible support made from a polymer material. A device producible by this method.

Abstract: A micromechanical actuator includes a shaft and at least a first driving mechanism. The shaft and the first driving mechanism are connected by a first joint.

Abstract: A sensor array, in particular a micromechanical sensor array, and methods for manufacturing the sensor array are provided, which sensor array includes a sensor section for supplying certain sensor signals, and a cover section provided on the sensor section to form a hermetically sealed sensor interior. An electronic analyzer device is at least partially integratable into cover section for analysis of the sensor signals, and electrically connectable to a corresponding circuit device of the sensor section.

Abstract: A method for producing etched holes and/or etched trenches of components based on silicon and/or a layered silicon/insulator structure. A germanium-containing layer and/or a germanium layer is provided at the point in the etching direction at which or in whose surroundings an etching procedure is to be completed. Germanium and/or germanium compounds are detected during the etching procedure and the etching procedure is controlled, in particular interrupted, as a function of the detection of germanium and/or germanium compounds. In addition, a diaphragm sensor unit is provided, in whose layered structure a germanium and/or germanium-containing layer is provided.

Abstract: A sensor array, in particular a micromechanical sensor array, and methods for manufacturing the sensor array are provided, which sensor array includes a sensor section for supplying certain sensor signals, and a cover section provided on the sensor section to form a hermetically sealed sensor interior. An electronic analyzer device is at least partially integratable into cover section for analysis of the sensor signals, and electrically connectable to a corresponding circuit device of the sensor section.

Abstract: A method for producing a micromechanical structure, and a micromechanical structure having a movable structure and a stationary structure made of silicon. In the method for producing the micromechanical structure, in one process step, a superficial metal-silicide layer is produced in the movable structure and/or the stationary structure.

Abstract: A person-individual emergency recognition system, having at least one sensor for detecting at least one mechanical or other physical event having an effect on the person and for triggering a safety function, in which the at least one sensor is connected to a transmitter with which the safety function may be triggered at a predefinable or arbitrarily selectable distance with respect to the event location. The transmitter is preferably a component of a conventional mobile radio-communication system, and a device is provided for determining and transmitting the event location, for example, using a conventional global positioning system.

Abstract: An integrated detonation element or firing element including a base member, e.g., a silicon member, and a reaction region associated therewith, is provided. The reaction region includes porous silicon and an oxidizing agent for silicon. An arrangement is provided with which a chemical reaction is initiated between the oxidizing agent and the porous silicon. The detonation or firing element is suitable principally for use in a microreactor; in a microbooster, e.g., for course correction of satellites; as a firing element in a gas generator for a belt tensioner or an airbag, e.g., in motor vehicles; or as a primer for the ignition of explosive charges.

Abstract: A micromechanical component is described, in particular an acceleration sensor or a rotational speed sensor having functional components which are movably suspended over a substrate, opposite surfaces of the functional components being movable toward one another. The opposite surfaces of the functional components are at least partially coated with a conductive film.