Abstract: The invention relates to an optoelectronic lighting device comprising a carrier, at least one light emitting semiconductor element which is arranged on a top surface of the carrier and is configured to emit light with a wavelength smaller than 550 nm, a mold compound which is substantially transparent to the light emitted by the semiconductor element and encapsulates the light emitting semiconductor element on the carrier, a frame which is arranged on the top surface of the carrier and projects beyond the light emitting semiconductor element in a direction perpendicular to the top surface of the carrier, and which delimits the mold compound in at least one spatial direction, and a cover element which is substantially transparent to the light emitted by the semiconductor element and which is arranged floating on the mold compound as seen in an emission direction of the optoelectronic lighting device.

Abstract: The invention relates to an optoelectronic component including an electrically conductive first contact layer located on a carrier substrate, an electrically conductive platform that is located on the first contact layer and is formed integrally therewith, at least one laser diode that is located on the platform and is electrically connected thereto, and an electrically conductive second contact layer which is electrically coupled to the at least one laser diode. The height of the platform is such that the laser facet of the at least one laser diode is at such a vertical distance from the carrier substrate that a light cone emitted by the laser diode through the laser facet does not strike the carrier substrate within a predefined horizontal distance from the laser facet.

Abstract: A component (20) for data glasses (21) is provided, the component (20) comprising a radiation source (22), which is designed to emit electromagnetic radiation during operation, a multifocal element (23) with at least a first region (24) and at least a second region (25), and an imaging system (26), which is designed to image electromagnetic radiation emitted by the radiation source (22) into a region outside the component (20), wherein the first region (24) comprises an invariable first refractive power and the second region (25) comprises an invariable second refractive power different from the first refractive power, the multifocal element (23) is arranged in the imaging system (26), and the first region (24) and the second region (25) are arranged concentrically to each other. Furthermore, data glasses (21) are disclosed.

Abstract: A method is described for operating at least two laser devices for generating a display, in which the at least two laser devices generate a sequence of light points. In a first step, a first one of the sequence of light spots is generated during a first period of time by at least one of the at least two laser devices and a voltage drop across the at least one of the at least two laser devices is detected within the first period of time. A target brightness is then determined for a second of the sequence of light points for at least one of the at least two laser devices. Subsequently, a supply current and/or a turn-on time is determined during a second time period for generating the target brightness for the at least one of the at least two laser devices.

Abstract: The invention relates to an optoelectronic assembly with an optoelectronic component with two or more connecting contacts for feeding supply and/or control signals. A housing with a two-dimensional structured underside has two or more solder pads which are each surrounded by a non-wettable region, wherein the solder pads are guided through the underside of the housing and are connected to the plurality of connecting contacts. Furthermore, the underside of the housing comprises two or more solder surfaces which are each surrounded by a non-wettable region. The two or more solder pads and the solder surfaces are thereby substantially uniformly distributed over the underside of the housing.

Abstract: The invention relates to a semiconductor laser device a surface emitting semiconductor laser element having a GaN-containing compound semiconductor layer and a converter. The converter is adapted to convert a wavelength of laser radiation emitted from the surface emitting semiconductor laser element.

Abstract: The invention relates to an optoelectronic laser device which includes: a first set of edge-emitting laser diodes, the first set of edge-emitting laser diodes having one or more first laser diodes, each of which has a first light emission region for laser light on a side face, and a second set of edge-emitting laser diodes, the second set of edge-emitting laser diodes having one or more second laser diodes, each of which has a second laser emission region for laser light on a side face, wherein the side faces of the first and second laser diodes lie at least substantially in the same plane, wherein a particular second laser diode (21b, 21d, 21f) is allocated to a particular first laser diode, and wherein the light emission regions of the first and of the allocated second laser diode are arranged at a distance from each other which is smaller than 10 ?m, preferably smaller than 5 ?m, further preferably smaller than 3 ?m, and even further preferably smaller than 2 ?m.

Abstract: In one embodiment, an apparatus may include a light source. The apparatus also includes a measuring laser, such as a semiconductor laser. The measuring laser is configured to generate pulses with a maximum pulse duration of 10 ns. A wavelength of maximum intensity of the measuring laser radiation generated by the measuring laser ranges from 400 nm to 485 nm inclusive. The measuring laser radiation is used for distance measurement by means of LIDAR, for example in a car headlight.

Abstract: In one embodiment, an apparatus may include a light source. The apparatus also includes a measuring laser, such as a semiconductor laser. The measuring laser is configured to generate pulses with a maximum pulse duration of 10 ns. A wavelength of maximum intensity of the measuring laser radiation generated by the measuring laser ranges from 400 nm to 485 nm inclusive. The measuring laser radiation is used for distance measurement by means of LIDAR, for example in a car headlight.

Abstract: Electronic component with a support comprising a first inorganic insulating layer and a second inorganic insulating layer, between which a metal core is arranged, a first, a second and a third electrically conductive structure which are arranged on a top surface of the carrier, a first and a second electrical contact point and a thermal contact point, which are arranged on a bottom surface of the carrier, a component and an electrical protection element which are arranged on the side of the top surface of the carrier, in which the first electrically conductive structure is electrically conductively connected to the first electrical contact point, the second electrically conductive structure is electrically conductively connected to the second electrical contact point, the third electrically conductive structure is electrically conductively connected to the thermal contact point, the component is electrically conductively connected to the first and second electrically conductive structures, the electrical prot

Abstract: An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometers.

Abstract: Electronic component with a support comprising a first inorganic insulating layer and a second inorganic insulating layer, between which a metal core is arranged, a first, a second and a third electrically conductive structure which are arranged on a top surface of the carrier, a first and a second electrical contact point and a thermal contact point, which are arranged on a bottom surface of the carrier, a component and an electrical protection element which are arranged on the side of the top surface of the carrier, in which the first electrically conductive structure is electrically conductively connected to the first electrical contact point, the second electrically conductive structure is electrically conductively connected to the second electrical contact point, the third electrically conductive structure is electrically conductively connected to the thermal contact point, the component is electrically conductively connected to the first and second electrically conductive structures, the electrical prot

Abstract: An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometres.

Abstract: An optoelectronic semiconductor component includes a connection carrier with at least two connection points and a carrier top that in a main side of the connection carrier, wherein the connection carrier configured with a silicone matrix with a fiber reinforcement, at least one optoelectronic semiconductor chip mounted on the connection carrier and in direct contact therewith, an annular potting body includes a soft silicone on the carrier top and in direct contact with the carrier top, but not in direct contact with the semiconductor chip, and a glass body comprising a glass sheet applied over the semiconductor chip and over sides of the potting body remote from the connection carrier, thereby forming a space between the semiconductor chip and the potting body.

Abstract: The invention relates to a radiation-emitting component comprising a semiconductor body which emits electromagnetic radiation from a radiation exit surface during operation. The semiconductor body is arranged in a component housing having a cutout. The component further comprises an optical element which is connected to the component housing in a mechanically stable manner by means of a joining layer. The modulus of elasticity of the joining layer is lower than or equal to 30 MPa.

Abstract: A luminous unit (1) for an optical recording device (13) comprising a light source (2) for generating radiation and a partly reflective element, which is disposed downstream of the light source (2) in a main emission direction (H) and subdivides a space into a first half-space facing the light source (2) and a second half-space remote from the light source (2), wherein the partly reflective element at least partly transmits the radiation coming from the light source (2) from the first half-space and at least partly reflects the external radiation coming from an opposite direction from the second half-space.

Abstract: An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The semiconductor components each include an active layer for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the semiconductor components that is remote from the carrier substrate. The semiconductor components are provided with an electrically insulating layer having a cutout in a region of the first contact area. Conductive structures are arranged in regions on the insulating layer. One of the conductive structures electrically conductively connects at least the first contact area of a semiconductor component to a further first contact area of a further semiconductor component or to a conductor track of the carrier substrate. A method for producing such a module is also described.

Abstract: The invention relates to a radiation-emitting component comprising a semiconductor body which emits electromagnetic radiation from a radiation exit surface during operation. The semiconductor body is arranged in a component housing having a cutout. The component further comprises an optical element which is connected to the component housing in a mechanically stable manner by means of a joining layer. The modulus of elasticity of the joining layer is lower than or equal to 30 MPa.

Abstract: A light emitting diode chip includes a device for protection against overvoltages, e.g., an ESD protection device. The ESD protection device is integrated into a carrier, on which the semiconductor layer sequence of the light emitting diode chip is situated, and is based on a specific doping of specific regions of said carrier. By way of example, the ESD protection device is embodied as a Zener diode that is connected to the semiconductor layer sequence by means of an electrical conductor structure.

Abstract: An optoelectronic semiconductor device at least one radiation-emitting semiconductor chip (3); at least one converter element (4) disposed downstream of the semiconductor chip (3) and serving for converting electromagnetic radiation emitted by the semiconductor chip (3) during operation, wherein the converter element (4) emits colored light upon irradiation with ambient light; a means for diffusely scattering light (5), which is designed to scatter ambient light impinging on the device in a switched-off operating state of the device in such a way that a light exit area (62) of the device appears white.