Abstract: The invention relates to an optoelectronic semiconductor component including a semiconductor body having a first region with a first conductivity, a second region with a second conductivity and an active region which is designed to emit coherent electromagnetic radiation. An optical resonator is formed along a resonator axis in the semiconductor body. The semiconductor body has a mounting side and side surfaces running transversely to the mounting side. Side surfaces running parallel to the resonator axis are covered by an electrically insulating passivation. A cooling layer which is designed to dissipate at least part of the power loss created in the semiconductor body during operation is arranged on a side of the passivation facing away from the semiconductor body. The invention also relates to an optoelectronic module.

Abstract: The invention relates to an optoelectronic lighting device comprising a carrier, at least one light emitting semiconductor element which is arranged on a top surface of the carrier and is configured to emit light with a wavelength smaller than 550 nm, a mold compound which is substantially transparent to the light emitted by the semiconductor element and encapsulates the light emitting semiconductor element on the carrier, a frame which is arranged on the top surface of the carrier and projects beyond the light emitting semiconductor element in a direction perpendicular to the top surface of the carrier, and which delimits the mold compound in at least one spatial direction, and a cover element which is substantially transparent to the light emitted by the semiconductor element and which is arranged floating on the mold compound as seen in an emission direction of the optoelectronic lighting device.

Abstract: A component including a carrier and exactly two semiconductor chips arranged next to one another on the carrier is specified, the exactly two semiconductor chips are each embodied as a double-emitter having exactly two emitter regions or each being embodied as a triple-emitter having exactly three emitter regions and are thus different from a single-emitter. The emitter regions of the component are assigned to the exactly two semiconductor chips, the exactly two semiconductor chips being laser diodes which each have ridges defining the emitter region. The exactly two semiconductor chips are electrically contacted via the carrier.

Abstract: The invention relates to an optoelectronic component including an electrically conductive first contact layer located on a carrier substrate, an electrically conductive platform that is located on the first contact layer and is formed integrally therewith, at least one laser diode that is located on the platform and is electrically connected thereto, and an electrically conductive second contact layer which is electrically coupled to the at least one laser diode. The height of the platform is such that the laser facet of the at least one laser diode is at such a vertical distance from the carrier substrate that a light cone emitted by the laser diode through the laser facet does not strike the carrier substrate within a predefined horizontal distance from the laser facet.

Abstract: The invention relates to an optoelectronic assembly including at least two semiconductor laser components, which are designed to emit electromagnetic radiation, and an optical superpositioning element with at least one radiation inlet surface and a radiation outlet surface. Each semiconductor laser component is paired with a respective optical element, and each semiconductor laser component emits an inlet beam bundle or a plurality of spatially separated inlet beam bundles. All of the inlet beam bundles of a semiconductor laser component pass through the respective paired optical element, wherein a plurality of inlet beam bundles emitted by a semiconductor laser component are fanned out relative to each other after passing through the optical element such that the inlet beam bundles enter the optical superpositioning element at different inlet angles.

Abstract: A component (20) for data glasses (21) is provided, the component (20) comprising a radiation source (22), which is designed to emit electromagnetic radiation during operation, a multifocal element (23) with at least a first region (24) and at least a second region (25), and an imaging system (26), which is designed to image electromagnetic radiation emitted by the radiation source (22) into a region outside the component (20), wherein the first region (24) comprises an invariable first refractive power and the second region (25) comprises an invariable second refractive power different from the first refractive power, the multifocal element (23) is arranged in the imaging system (26), and the first region (24) and the second region (25) are arranged concentrically to each other. Furthermore, data glasses (21) are disclosed.

Abstract: In an embodiment a method includes providing a connecting element having a first main surface, applying a first frame-shaped metallization to or over a carrier and applying a first frame-shaped solder reservoir over the first main surface of the connecting element or applying the first frame-shaped metallization over the first main surface of the connecting element and applying the first frame-shaped solder reservoir over or to the carrier, wherein a width of the first frame-shaped solder reservoir is smaller than a width of the first frame-shaped metallization and liquefying a solder of the first frame-shaped solder reservoir so that a first frame-shaped solder layer is formed which mechanically connects the carrier and the connecting element to one another, the first frame-shaped solder layer having a seam which is formed during liquefying the solder of the first frame-shaped solder reservoir and surrounds the first frame-shaped solder layer.

Abstract: A laser component is provided, the laser component including at least one first laser diode, and at least one second laser diode, the first laser diode and the second laser diode each including an active zone in a semiconductor layer, the active zones each extend parallel to the main plane of extension of the respective laser diode, the semiconductor layers each include a first side and a second side facing away from the first side, the first side and the second side each extending parallel to the main plane of extension of the respective laser diode, the second laser diode being arranged on the first laser diode in a vertical direction which is perpendicular to the main plane of extensions of the laser diodes, the first laser diode having a larger extent in its main plane of extension than the second laser diode in its main plane of extension and at least one electrical contact is arranged in a contact region of the first laser diode which is arranged on the side of the first laser diode facing the second la

Abstract: A method is described for operating at least two laser devices for generating a display, in which the at least two laser devices generate a sequence of light points. In a first step, a first one of the sequence of light spots is generated during a first period of time by at least one of the at least two laser devices and a voltage drop across the at least one of the at least two laser devices is detected within the first period of time. A target brightness is then determined for a second of the sequence of light points for at least one of the at least two laser devices. Subsequently, a supply current and/or a turn-on time is determined during a second time period for generating the target brightness for the at least one of the at least two laser devices.

Abstract: A semiconductor chip with a structured chip back side is specified, the chip back side being configured for electrical and thermal linking of the semiconductor chip, the semiconductor chip having emitter regions configured for producing electromagnetic radiation and the structured chip back side having connection pads configured for electrical linking of the emitter regions. The connection pads are p-contacts or n-contacts, with, in a plan view, all connection pads (which are configured either as p-contacts or as n-contacts overlapping with at least two of the emitter regions in each case and each of these connection pads being configured for electrical linking of only one of the emitter regions. Moreover, a component is specified, in particular comprising at least one such semiconductor chip.

Abstract: In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.

Abstract: The invention relates to an optoelectronic assembly with an optoelectronic component with two or more connecting contacts for feeding supply and/or control signals. A housing with a two-dimensional structured underside has two or more solder pads which are each surrounded by a non-wettable region, wherein the solder pads are guided through the underside of the housing and are connected to the plurality of connecting contacts. Furthermore, the underside of the housing comprises two or more solder surfaces which are each surrounded by a non-wettable region. The two or more solder pads and the solder surfaces are thereby substantially uniformly distributed over the underside of the housing.

Abstract: The invention relates to a semiconductor laser device a surface emitting semiconductor laser element having a GaN-containing compound semiconductor layer and a converter. The converter is adapted to convert a wavelength of laser radiation emitted from the surface emitting semiconductor laser element.

Abstract: A projector includes a first optoelectronic semiconductor chip for generating a first radiation having a first color. The projector also includes a second optoelectronic semiconductor chip for generating a second radiation-having a second color. The projector further includes a wavelength conversion element which is configured to generate a third radiation having a third color from a first portion of the first radiation. The projector additionally includes beam splitter. The projector also includes a scattering plate. The wavelength conversion element is configured to fully convert the first portion of the first radiation. The beam splitter is configured to branch off a second portion of the first radiation upstream of the wavelength conversion element. The scattering plate is arranged in a beam path of the second portion of the first radiation at a point at which the first portion has already been branched off.

Abstract: In an embodiment a radiation-emitting component includes a first semiconductor chip configured to generate first primary electromagnetic radiation, a second semiconductor chip configured to generate second primary electromagnetic radiation, a first conversion element configured to partially convert the first and/or the second primary electromagnetic radiation into a first secondary radiation, wherein the first semiconductor chip is a first semiconductor laser diode, wherein the first primary electromagnetic radiation is blue primary radiation and wherein the first secondary radiation is green secondary radiation and a first optical element arranged between radiation emitting surfaces of the first semiconductor chip and the second semiconductor chip, wherein the first optical element is reflective for the first primary radiation and the second primary radiation.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: The invention relates to a radiation-emitting laser component including:—an edge-emitting laser diode which is designed to generate electromagnetic laser radiation, and—a substrate, on which the edge-emitting laser diode is arranged, wherein—the edge-emitting laser diode has a contact layer,—the substrate has a substrate web, and—the contact layer is connected to the substrate web by means of a solder layer in a mechanically stable manner. The invention also relates to a method for producing a radiation-emitting laser component.

Abstract: The invention relates to an optoelectronic component including a semiconductor chip having a coupling-out facet that emits electromagnetic primary radiation during operation, —a functional layer, wherein the coupling-out facet is at least partially covered by the functional layer, and —the functional layer is a catalytic layer. The invention also relates to a method for producing an optoelectronic component.