Abstract: A light emitting diode chip includes a device for protection against overvoltages, e.g., an ESD protection device. The ESD protection device is integrated into a carrier, on which the semiconductor layer sequence of the light emitting diode chip is situated, and is based on a specific doping of specific regions of said carrier. By way of example, the ESD protection device is embodied as a Zener diode that is connected to the semiconductor layer sequence by means of an electrical conductor structure.

Abstract: An optoelectronic semiconductor device at least one radiation-emitting semiconductor chip (3); at least one converter element (4) disposed downstream of the semiconductor chip (3) and serving for converting electromagnetic radiation emitted by the semiconductor chip (3) during operation, wherein the converter element (4) emits colored light upon irradiation with ambient light; a means for diffusely scattering light (5), which is designed to scatter ambient light impinging on the device in a switched-off operating state of the device in such a way that a light exit area (62) of the device appears white.

Abstract: A luminous unit (1) for an optical recording device (13) comprising a light source (2) for generating radiation and a partly reflective element, which is disposed downstream of the light source (2) in a main emission direction (H) and subdivides a space into a first half-space facing the light source (2) and a second half-space remote from the light source (2), wherein the partly reflective element at least partly transmits the radiation coming from the light source (2) from the first half-space and at least partly reflects the external radiation coming from an opposite direction from the second half-space.

Abstract: An optoelectronic semiconductor component includes a connection carrier with at least two connection points and configured with a silicone matrix with a fiber reinforcement, and at least one optoelectronic semiconductor chip mounted on the connection carrier and in direct contact therewith.

Abstract: A light emitting diode chip includes a device for protection against overvoltages, e.g., an ESD protection device. The ESD protection device is integrated into a carrier, on which the semiconductor layer sequence of the light emitting diode chip is situated, and is based on a specific doping of specific regions of said carrier. By way of example, the ESD protection device is embodied as a Zener diode that is connected to the semiconductor layer sequence by means of an electrical conductor structure.

Abstract: The invention relates to a method for producing an electrical leadframe (10), in particular for a light-emitting diode component, having at least one first electrical connection conductor (2) and at least one second electrical connection conductor (3).

Abstract: The invention relates to a method for producing an electrical leadframe (10), in particular for a light-emitting diode component, having at least one first electrical connection conductor (2) and at least one second electrical connection conductor (3).

Abstract: The invention relates to a method for producing an electrical leadframe (10), in particular for a light-emitting diode component, having at least one first electrical connection conductor (2) and at least one second electrical connection conductor (3). The method includes a) production of a layer composite comprising an electrically insulating carrier layer (101) and an electrically conductive connection conductor layer (102), b) patterning of the carrier layer (101) in such a way that at least one contact-making window (7) toward the connection conductor layer (102) is produced in said carrier layer, and c) patterning of the connection conductor layer (102), in such a way that the first electrical connection conductor (2) and the second electrical connection conductor (3) are produced, at least one of which can be electrically connected through the contact-making window (7).

Abstract: The invention relates to a method for producing an electrical leadframe (10), in particular for a light-emitting diode component, having at least one first electrical connection conductor (2) and at least one second electrical connection conductor (3). The method includes a) production of a layer composite comprising an electrically insulating carrier layer (101) and an electrically conductive connection conductor layer (102), b) patterning of the carrier layer (101) in such a way that at least one contact-making window (7) toward the connection conductor layer (102) is produced in said carrier layer, and c) patterning of the connection conductor layer (102), in such a way that the first electrical connection conductor (2) and the second electrical connection conductor (3) are produced, at least one of which can be electrically connected through the contact-making window (7).