Abstract: An electronic device is described. The electronic device includes a flash configured to generate a pre-flash and a regular flash and a camera. The electronic device also includes a processor communicatively coupled to the flash and the camera. The processor is configured to, in response to receiving a picture request: determine one or more high dynamic range (HDR) settings and configure an HDR mode of the camera with the determined HDR settings; cause the flash to generate a pre-flash while the HDR mode of the camera is configured with the determined HDR settings; obtain an HDR image from the camera after causing the flash to generate the pre-flash and while the camera is configured with the determined HDR setting; and determine one or more camera configuration settings based on the obtained HDR image.

Abstract: An electronic device is described. The electronic device includes a flash configured to generate a pre-flash and a regular flash and a camera. The electronic device also includes a processor communicatively coupled to the flash and the camera. The processor is configured to, in response to receiving a picture request: determine one or more high dynamic range (HDR) settings and configure an HDR mode of the camera with the determined HDR settings; cause the flash to generate a pre-flash while the HDR mode of the camera is configured with the determined HDR settings; obtain an HDR image from the camera after causing the flash to generate the pre-flash and while the camera is configured with the determined HDR setting; and determine one or more camera configuration settings based on the obtained HDR image.

Abstract: Methods and electronic devices for producing a zoomed image using a narrow field of view monochrome camera are described. In one aspect, the method includes: receiving a color image that is captured by a color camera; receiving an achromatic image that is captured by a monochrome camera with the monochrome camera having a narrower field of view than the color camera; and merging the color image and the achromatic image to produce an enhanced image.

Abstract: Aspects describe front-end pixel fixed pattern noise correction in imaging arrays having wide dynamic range. A photosensor of a first pixel in a first row of an array is reset and a first reset level of the first pixel is measured. The array comprises a plurality of pixels arranged in rows and columns. In response to a result of the first reset level, a reset bus is altered. A feed-forward adjustment of the photosensor of the first pixel is performed to substantially remove fixed-pattern noise. An external readout from the photosensor can occur with substantially all the fixed-pattern noise removed. In some aspects, the adjustment is performed by a switched capacitor block.

Abstract: Methods and electronic devices for producing a zoomed image using a narrow field of view monochrome camera are described. In one aspect, the method includes: receiving a color image that is captured by a color camera; receiving an achromatic image that is captured by a monochrome camera with the monochrome camera having a narrower field of view than the color camera; and merging the color image and the achromatic image to produce an enhanced image.

Abstract: The claimed subject matter provides systems and/or methods that facilitate mitigating an impact resulting from mismatch between signal chains in a CMOS imaging System-on-Chip (iSoC) sensor. Two-by-two pixel structures can be a basic building block upon which a pixel array is constructed. Further, each two-by-two pixel structure can be associated with a read bus that carries a sampled signal to a top end and a bottom end of a chip. Moreover, multiplexers at either end of the chip can select a subset of the read buses from which to receive a subset of the sampled signals. Accordingly, pixels in a first color plane can be read, processed, etc. on the same side of the chip (e.g., utilizing a common signal chain), while pixels in at least one second color plane can be read, processed, etc. on the other side of the chip (e.g., employing a differing signal chain).

Abstract: Aspects describe front-end pixel fixed pattern noise correction in imaging arrays having wide dynamic range. A photosensor of a first pixel in a first row of an array is reset and a first reset level of the first pixel is measured. The array comprises a plurality of pixels arranged in rows and columns. In response to a result of the first reset level, a reset bus is altered. A feed-forward adjustment of the photosensor of the first pixel is performed to substantially remove fixed-pattern noise. An external readout from the photosensor can occur with substantially all the fixed-pattern noise removed. In some aspects, the adjustment is performed by a switched capacitor block.

Abstract: The claimed subject matter provides systems and/or methods that facilitate mitigating an impact resulting from mismatch between signal chains in a CMOS imaging System-on-Chip (iSoC) sensor. Two-by-two pixel structures can be a basic building block upon which a pixel array is constructed. Further, each two-by-two pixel structure can be associated with a read bus that carries a sampled signal to a top end and a bottom end of a chip. Moreover, multiplexers at either end of the chip can select a subset of the read buses from which to receive a subset of the sampled signals. Accordingly, pixels in a first color plane can be read, processed, etc. on the same side of the chip (e.g., utilizing a common signal chain), while pixels in at least one second color plane can be read, processed, etc. on the other side of the chip (e.g., employing a differing signal chain).

Abstract: The claimed subject matter provides systems and/or methods that facilitate mitigating an impact resulting from mismatch between signal chains in a CMOS imaging System-on-Chip (iSoC) sensor. Two-by-two pixel structures can be a basic building block upon which a pixel array is constructed. Further, each two-by-two pixel structure can be associated with a read bus that carries a sampled signal to a top end and a bottom end of a chip. Moreover, multiplexers at either end of the chip can select a subset of the read buses from which to receive a subset of the sampled signals. Accordingly, pixels in a first color plane can be read, processed, etc. on the same side of the chip (e.g., utilizing a common signal chain), while pixels in at least one second color plane can be read, processed, etc. on the other side of the chip (e.g., employing a differing signal chain).

Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.

Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.

Abstract: A rolling shutter technique for a pixel array is described in which multiple rows of the array are hard reset as the shutter moves down the array. As the rolling shutter progresses down the array, each row is hard reset multiple times before its integration period begins, thereby ensuring that the row is in a true hard reset condition at the beginning of its integration period. Also, multiple rows are hard reset in advance of the beginning of the integration period for a given row, thereby making it less likely that overexposed pixels several rows away will be able to distort the integrating row by blooming.

Abstract: A pixel cell in which a capacitance is coupled between a storage node and a row select transistor. The pixel cell utilizes a readout timing sequence between operation of a reset transistor and a row select transistor to boost a reset voltage.

Abstract: An anti-eclipse circuit of an image pixel includes a clamping circuit for pulling up a voltage of a reset signal output by the pixel and an eclipse detection circuit for controllably coupling the clamping circuit output to the output of the pixel. The clamping circuit includes a source follower transistor and a switching transistor. The eclipse detection circuit includes a comparator that is operated to detect an eclipse condition. The eclipse detection circuit outputs a control signal to cause the switching transistor to conduct only when a eclipse condition is detected while the pixel is outputting a reset signal.

Abstract: The claimed subject matter provides systems and/or methods that facilitate reducing dark current and lag in a CMOS imaging System-on-Chip (iSoC) sensor. For instance, a vertical output driver can output a signal upon a node connected to gates of reset transistors and/or gates of transfer transistors of pixels in the pixel array while operating in rolling shutter mode and/or global shutter mode. Further, a pre-charger can transition a voltage of the node to a first voltage level. Moreover, a booster can further adjust the voltage of the node from the first voltage level to a second voltage level. The booster can have variable drive capability that enables varying operation thereof according to at least one degree of freedom (e.g., speed of the booster proceeding to the second voltage level, frequency of yielding charge to the node, the second voltage level, or timing of the booster and the pre-charger, . . . ).

Abstract: A pixel cell array architecture having a multiple pixel cells with shared pixel cell components. The individual pixel cell architecture increases the fill factor and the quantum efficiency for the pixel cell. The common pixel cell components may be shared by a number of pixels in the array, and may include several components that are associated with the readout of a signal from the pixel cell. Other examples of the pixel array architecture having improved fill factor for pixels in the array include an angled transfer gate and an efficiently located, shared capacitor.

Abstract: A storage gate pixel operates such that the storage gate is not required to have the same capacity as a photodiode of the pixel. This provides greater fill factor for the pixel and a higher signal to noise ratio.

Abstract: A black clamp stabilization circuit for an image sensor utilizes a mixed-signal SoC block comprising sub-blocks to dynamically and precisely adjust the black level based on comparison to a reference black level. The black level adjustments include a first level regulation using digital control of an analog signal in a feedback loop that includes a programmable gain amplifier and high-resolution A/D converter. By applying the black clamping in the analog domain, dynamic range is extended. Additional black level regulation is subsequently performed in the digital domain to differentially eliminate line noise and column noise generated within the imaging System-on-Chip. By providing information between the sub-blocks, the algorithms can converge more quickly. The technique enables multiple signal paths to separately handle individual colors and to increase imaging data throughput.

Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.

Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.