Patents by Inventor Johan Bourgeat

Johan Bourgeat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200098743
    Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.
    Type: Application
    Filed: November 26, 2019
    Publication date: March 26, 2020
    Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
  • Patent number: 10515946
    Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: December 24, 2019
    Assignee: STMicroelectronics SA
    Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
  • Publication number: 20190267367
    Abstract: An integrated circuit includes a power supply terminal, a reference terminal, and a signal terminal. A first protection device is coupled between the signal terminal and the power supply terminal, the first protection device including a first MOS transistor. A second protection device is coupled between the signal terminal and the reference terminal, the second protection device including a second MOS transistor. Gates of the MOS transistors are directly or indirectly coupled to the reference terminal. Substrates of the MOS transistors are coupled to the reference terminal via a common resistor.
    Type: Application
    Filed: May 8, 2019
    Publication date: August 29, 2019
    Applicant: STMicroelectronics SA
    Inventor: Johan BOURGEAT
  • Patent number: 10340265
    Abstract: An integrated circuit includes a power supply terminal, a reference terminal, and a signal terminal. A first protection device is coupled between the signal terminal and the power supply terminal, the first protection device including a first MOS transistor. A second protection device is coupled between the signal terminal and the reference terminal, the second protection device including a second MOS transistor. Gates of the MOS transistors are directly or indirectly coupled to the reference terminal. Substrates of the MOS transistors are coupled to the reference terminal via a common resistor.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: July 2, 2019
    Assignee: STMicroelectronics SA
    Inventor: Johan Bourgeat
  • Publication number: 20180269199
    Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.
    Type: Application
    Filed: May 17, 2018
    Publication date: September 20, 2018
    Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
  • Publication number: 20180254270
    Abstract: An integrated circuit includes a power supply terminal, a reference terminal, and a signal terminal. A first protection device is coupled between the signal terminal and the power supply terminal, the first protection device including a first MOS transistor. A second protection device is coupled between the signal terminal and the reference terminal, the second protection device including a second MOS transistor. Gates of the MOS transistors are directly or indirectly coupled to the reference terminal. Substrates of the MOS transistors are coupled to the reference terminal via a common resistor.
    Type: Application
    Filed: September 1, 2017
    Publication date: September 6, 2018
    Applicant: STMicroelectronics SA
    Inventor: Johan Bourgeat
  • Patent number: 9997907
    Abstract: An electronic device includes first and second terminals with an electronic circuit coupled there between. The electronic circuit includes a protection circuit and a resistive-capacitive circuit. The resistive-capacitive circuit triggers the protection circuit to protect against electrostatic discharges in the presence of a current pulse between the first and second terminals. A control circuit is configured to slow down a discharge from the resistive-capacitive circuit when the protection circuit is triggered.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: June 12, 2018
    Assignee: STMicroelectronics SA
    Inventors: Johan Bourgeat, Boris Heitz, Jean Jimenez
  • Patent number: 9997512
    Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: June 12, 2018
    Assignee: STMicroelectronics SA
    Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
  • Patent number: 9991173
    Abstract: An integrated circuit is produced on a bulk semiconductor substrate in a given CMOS technology and includes a semiconductor device for protection against electrostatic discharges. The semiconductor device has a doublet of floating-gate, thyristors coupled in parallel and head-to-tail. Each thyristor has a pair of electrode regions. The two thyristors respectively have two separate gates and a common semiconductor gate region. The product of the current gains of the two transistors of each thyristor is greater than 1. Each electrode region of at least one of the thyristors has a dimension, measured perpendicularly to the spacing direction of the two electrodes of the corresponding pair, which is adjusted so as to impart to the thyristor an intrinsic triggering voltage less than the breakdown voltage of a transistor to be protected, and produced in the CMOS technology.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: June 5, 2018
    Assignee: STMicroelectronics SA
    Inventors: Philippe Galy, Johan Bourgeat
  • Publication number: 20180130788
    Abstract: An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. The gates of the first conductivity type for the thyristors in the sequence are coupled together in order to form a single control gate.
    Type: Application
    Filed: January 5, 2018
    Publication date: May 10, 2018
    Applicant: STMicroelectronics SA
    Inventors: Johan Bourgeat, Jean Jimenez
  • Patent number: 9899366
    Abstract: An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. The gates of the first conductivity type for the thyristors in the sequence are coupled together in order to form a single control gate.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: February 20, 2018
    Assignee: STMicroelectronics SA
    Inventors: Johan Bourgeat, Jean Jimenez
  • Publication number: 20170148780
    Abstract: An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. The gates of the first conductivity type for the thyristors in the sequence are coupled together in order to form a single control gate.
    Type: Application
    Filed: April 12, 2016
    Publication date: May 25, 2017
    Applicant: STMicroelectronics SA
    Inventors: Johan Bourgeat, Jean Jimenez
  • Patent number: 9614367
    Abstract: A device includes a transistor configured for operating in a hybrid mode, an element configured for generating and injecting a current into the substrate of the transistor in the presence of an ESD pulse, and a thyristor triggerable at least by the element.
    Type: Grant
    Filed: September 3, 2014
    Date of Patent: April 4, 2017
    Assignee: STMicroelectronics SA
    Inventors: Philippe Galy, Johan Bourgeat
  • Publication number: 20160380427
    Abstract: An electronic device includes first and second terminals with an electronic circuit coupled there between. The electronic circuit includes a protection circuit and a resistive-capacitive circuit. The resistive-capacitive circuit triggers the protection circuit to protect against electrostatic discharges in the presence of a current pulse between the first and second terminals. A control circuit is configured to slow down a discharge from the resistive-capacitive circuit when the protection circuit is triggered.
    Type: Application
    Filed: December 10, 2015
    Publication date: December 29, 2016
    Applicant: STMicroelectronics SA
    Inventors: Johan Bourgeat, Boris Heitz, Jean Jimenez
  • Publication number: 20160315077
    Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
  • Patent number: 9401351
    Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: July 26, 2016
    Assignee: STMicroelectronics SA
    Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
  • Patent number: 9299668
    Abstract: A device for protecting a set of N nodes from electrostatic discharges, wherein N is greater than or equal to three, includes a set of N units respectively possessing N first terminals respectively connected to the N nodes and N second terminals connected together to form a common terminal. Each unit includes at least one MOS transistor including a parasitic transistor connected between a pair of the N nodes and configured, in the presence of a current pulse between the pair of nodes, to operate, at least temporarily, in a hybrid mode including MOS-type operation in a sub-threshold mode and operation of the bipolar transistor.
    Type: Grant
    Filed: December 5, 2012
    Date of Patent: March 29, 2016
    Assignee: STMicroelectronics SA
    Inventors: Johan Bourgeat, Philippe Galy
  • Patent number: 9287254
    Abstract: An electronic device includes a first device terminal and a second device terminal. A first and a second thyristor are reverse-connected between the two device terminals. A first and a second MOS transistor are respectively coupled between the conduction electrodes (emitters and collectors) of the two NPN transistors of the two thyristors. A third MOS transistor is coupled between the emitters of the two NPN bipolar transistors of the two thyristors and a fourth MOS transistor is coupled between the bases of the two PNP bipolar transistors of the two thyristors. A gate region is common to all the MOS transistors and a semiconductor substrate region includes the substrates of all the MOS transistors.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: March 15, 2016
    Assignee: STMicroelectronics S.A.
    Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat
  • Publication number: 20150214210
    Abstract: An electronic device includes a first device terminal and a second device terminal. A first and a second thyristor are reverse-connected between the two device terminals. A first and a second MOS transistor are respectively coupled between the conduction electrodes (emitters and collectors) of the two NPN transistors of the two thyristors. A third MOS transistor is coupled between the emitters of the two NPN bipolar transistors of the two thyristors and a fourth MOS transistor is coupled between the bases of the two PNP bipolar transistors of the two thyristors.
    Type: Application
    Filed: January 16, 2015
    Publication date: July 30, 2015
    Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat
  • Publication number: 20150214214
    Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.
    Type: Application
    Filed: January 30, 2015
    Publication date: July 30, 2015
    Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre