Abstract: According to a method for fragmenting of pourable material by high-voltage discharges, a material flow of the material, immersed in a process liquid, is guided past an electrode assembly by a conveying device carrying the material flow. By charging the electrode assembly with high-voltage pulses, high-voltage punctures through the material of the material flow are produced. The electrodes of the electrode assembly are immersed in the process liquid from above, and those of these electrodes between which the high-voltage punctures are produced face each other with an electrode spacing transverse to the material flow direction.

Abstract: A method for fragmenting and/or weakening pourable material includes guiding a material stream of pourable material immersed in a process liquid along an annular or arcuate channel past a high-voltage electrode assembly. The high-voltage electrode assembly, which includes one or more generators, generates high-voltage punctures through the material flow. Material is supplied to the material stream upstream of the high voltage electrode arrangement. Material is guided away from the material stream downstream of the high-voltage electrode assembly.

Abstract: A method for fragmenting of pourable material by means of high-voltage discharges is disclosed. Thereby, a material flow of the material, immersed in a process liquid, is guided past an electrode assembly by means of a conveying device carrying the material flow, while by charging of the electrode assembly with high-voltage pulses, high-voltage punctures through the material of the material flow are produced. The electrodes of the electrode assembly are thereby immersed in the process liquid from above, and those of these electrodes between which the high-voltage punctures are produced face each other with an electrode spacing transversely to the material guiding-past direction.

Abstract: A method for the fragmentation and/or weakening of a piece of material by means of high-voltage discharges includes immersing the piece of material in a process fluid, guiding the material past a matrix formed by a number of high-voltage electrodes, which are supplied with high-voltage pulses. As such, high-voltage disruptive discharges occur through the piece of material whilst same is guided past the matrix. The high-voltage electrodes can be moved independently from one another along movement axes running substantially perpendicular to the passing direction of the work piece. And the electrodes are moved whilst the piece of material is guided past and whilst the high-voltage disruptive discharges are generated, in such a way that each follows the contour of the piece of material at a determined distance and are thereby immersed in the process fluid.

Abstract: A method for fragmenting and/or weakening pourable material with high-voltage discharges includes guiding an annular or arcuate material flow past a high-voltage electrode assembly while immersed in a process liquid, by means of which high-voltage electrode assembly high-voltage punctures through the material flow are produced in that high-voltage pulses are applied to the high-voltage electrodes of the high-voltage electrode assembly by means of a high-voltage generator. Material is fed to the flow upstream of the high-voltage electrode assembly, and material is led away from the flow downstream of the high-voltage electrode assembly. This enables a continuous process, in which the speed of the material and the intensity of the high-voltage punctures can be set in wide ranges, and any insufficiently processed material can be fed back to the process zone over a short distance and practically without additional space requirement.

Abstract: The invention relates to a CVD reactor having a process chamber (23) and a substrate holder support (1) arranged therein, said support comprising at least one bearing surface (4), wherein a plurality of gas inlet lines (7, 8) open out into the bearing surface (4?). The CVD reactor further has a substrate holder (2), the back side thereof facing the bearing surface (4?), wherein the gases fed through the gas inlet lines (7,8) into the space between the bearing surface (4?) and back side form a gas cushion (19) supporting the substrate holder (2). According to the invention, the gas cushion comprises a plurality of zones (A, C) that each can be fed through an associated gas inlet line (7, 8) and that are separated from each other by a means (15) preventing gas exchange between the zones (A, C). At least one inner zone (C) is associated with a gas discharge line (13, 14), via which the gas fed into the inner zone (C) by way of the inlet line (7, 8) can be discharged.

Abstract: The invention relates to a device for coating substrates having a process chamber (1) disposed in a reactor housing and a two-part, substantially cup-shaped susceptor (2, 3) disposed therein, forming an upper susceptor part (2) with the cup floor thereof having a flat plate (2?) and a lower susceptor part (3) with the cup side walls thereof, the outer side (4) of the plate (2?) of the upper susceptor part (2) facing upwards toward the process chamber (1) and forming a contact surface for at least one substrate, the upper susceptor part (2) contacting a front edge (3?) of the lower susceptor part (3) at the edge of said upper susceptor part (2), the lower susceptor part (3) being supported by a susceptor carrier (6), and heating zones (A, B, C) for heating the upper susceptor part (2) being disposed below the plate (2?).

Abstract: An ignition coil, in particular for an internal combustion engine of a motor vehicle, having a secondary winding situated on a coil body for the production of a high voltage at a spark plug, having a contact sleeve that electrically contacts the secondary winding and that is capable of being pushed over an end area of the coil body and that has at least one contact element for the secondary winding, and having a holding-down element that can be pushed over the contact sleeve and that acts on the at least one contact element of the contact sleeve. In its end position, the holding-down element protrudes beyond the at least one contact element of the contact sleeve, seen in the axial direction of the coil body, and covers the at least one contact element.

Abstract: A method for depositing a semiconductor layer on a multiplicity of substrates. The process chamber height (H), which is defined by the spacing between a process chamber ceiling (8) and a process chamber floor (9) is variable and influences the growth rate of the layer. The layer thickness is measured continuously or at in short intervals on at least one substrate (5) in each process chamber (2) while the layer is growing. The process chamber height (H) is varied by means of a controller (12) and an adjusting member (6), so that layers having the same layer thickness are deposited in the process chambers.

Abstract: A device for treating a substrate (12) includes a conveying device (13) for loading and unloading substrates or masks (10, 10?, 10?, 10??) into and from a process chamber (1) through loading openings (6, 7). A shielding plate (11), used to shield the substrate (12) or the mask (10) from the influence of heat is moved between a shielding position and a storage position during the substrate treatment and, after the substrate (12) is treated, from the storage position back into the shielding position. In the storage position, the shielding plate (11) is situated inside a storage chamber (2, 3).

Abstract: The invention relates to a CVD reactor having a plurality of rotary tables (2) supported on a rotationally driven susceptor (1) on dynamic gas cushions (3), wherein each gas cushion (3) is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device (4), can be varied by an individual actuator (5). The invention further comprises a carrier (6), carrying the susceptor (1) and rotating with the susceptor (1). A common gas supply line (7) ending in the carrier (6) is key to the invention and provides the actuators (5) arranged on the carrier (6) with the gas that forms the gas flow.

Abstract: The invention relates to a CVD reactor having a process chamber (23) and a substrate holder support (1) arranged therein, said support comprising at least one bearing surface (4), wherein a plurality of gas inlet lines (7, 8) open out into the bearing surface (4?). The CVD reactor further has a substrate holder (2), the back side thereof facing the bearing surface (4?), wherein the gases fed through the gas inlet lines (7,8) into the space between the bearing surface (4?) and back side form a gas cushion (19) supporting the substrate holder (2). According to the invention, the gas cushion comprises a plurality of zones (A, C) that each can be fed through an associated gas inlet line (7, 8) and that are separated from each other by a means (15) preventing gas exchange between the zones (A, C). At least one inner zone (C) is associated with a gas discharge line (13, 14), via which the gas fed into the inner zone (C) by way of the inlet line (7, 8) can be discharged.

Abstract: The invention relates to an apparatus for the deposition of one or more layers on a substrate (4), which comprises a process chamber (2) which is arranged in a reactor housing (1) and has a heatable bottom (3) on which the substrate rests and a lid (5) extending parallel to the bottom (3) and also a gas inlet facility (6) for introduction of process gases. The distance (H) between the process chamber lid (5) and the process chamber bottom (3) can be reduced to virtually zero. A cooling apparatus (7) by means of which the process chamber lid (5) is cooled in the process position during deposition of the layers is provided above the process chamber lid (5), with the distance between the cooling apparatus (7) and the process chamber lid (5) increasing as the distance (H) between the process chamber lid (5) and the process chamber bottom (3) is reduced.

Abstract: The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (4), extending in a vertical direction, of a gas inlet member (3), fixed in place with respect to a reactor housing, into a process chamber (1), extending in a horizontal direction, wherein the process gas leaves a gas outlet opening of a portion of the gas inlet member (3), protruding into the center of the rotationally symmetrical process chamber (1), and flows in a radially outward direction via a base (8?) of the process chamber (1), extending in a horizontal direction and rotating about the center, on which base the substrate lies. In order to improve the gas flow directly above the base of the process chamber, it is proposed that the front (3?) of the gas inlet member (3) protrudes into a pot-like recess (23) and an end portion (6?) of a gas deflecting face (6) is flush with the base (8?).

Abstract: The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber (5) consisting of a number of wall elements (1, 2, 3, 4), said wall elements (1, 2, 3, 4) being electroconductive and placed end-to-end, thus forming contacts (2?, 2?, 3?, 3?); a reactor housing (6) enclosing the wall elements (1, 2, 3, 4) of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements (1, 2, 3, 4) of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe (8) is implanted between the reactor housing (6) and the walls (1, 2, 3, 4) of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls (1, 2, 3, 4) of the treatment chamber.

Abstract: A deposition process involves the formation of multicomponent semiconductor layers, in particular III-V epitaxial layers, on a substrate. Due to pyrolytic decomposition inside the reaction chamber, one of the process gases forms a first decomposition product. Together with a second decomposition product of a second process gas, the decomposition products form a layer on the surface of a heated substrate and also adhere to surfaces of the process chamber. To remove these adherences, during an etching step a purge gas containing a reactive substance formed by free radicals is introduced into the process chamber. The etching step may be performed before or after the deposition process.

Abstract: The invention relates to a device for depositing one or more layers, in particular crystalline layers, on one or more substrates, in particular crystalline substrates (6), which are situated on a susceptor (3) in a process chamber (2) of a reactor (1). A process chamber wall (4) that can be actively heated by a process chamber heating unit (11) lies opposite the susceptor (3) that can be actively heated by the susceptor heating unit (11). The device is provided with a gas inlet organ (7) for introducing process gases into the process chamber and the process chamber heating unit (11) has a coolant channel (13) and is situated at a distance from the exterior (18) of the process chamber wall (4) during the active heating of the latter (4). The aim of the invention is to also allow the device to be used with hybrid technology.

Abstract: The invention relates to a device for coating substrates having a process chamber (1) disposed in a reactor housing and a two-part, substantially cup-shaped susceptor (2, 3) disposed therein, forming an upper susceptor part (3) with the cup floor thereof having a flat plate (2) and a lower susceptor part (3) with the cup side walls thereof, the outer side (4) of the plate (2) of the upper susceptor part (2) facing upwards toward the process chamber (1) and forming a contact surface for at least one substrate, the upper susceptor part (2) contacting a front edge (3?) of the lower susceptor part (3) at the edge of said upper susceptor part (2), the lower susceptor part (3) being supported by a susceptor carrier (6), and heating zones (A, B, C) for heating the upper susceptor part (2) being disposed below the plate (2?).

Abstract: The invention relates to a CVD reactor having a plurality of rotary tables (2) supported on a rotationally driven susceptor (1) on dynamic gas cushions (3), wherein each gas cushion (3) is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device (4), can be varied by an individual actuator (5). The invention further comprises a carrier (6), carrying the susceptor (1) and rotating with the susceptor (1). A common gas supply line (7) ending in the carrier (6) is key to the invention and provides the actuators (5) arranged on the carrier (6) with the gas that forms the gas flow.

Abstract: The invention relates to a device for coating a plurality of substrates (3) which are regularly arranged on a bearing surface (2) of a susceptor (1) associated to a process chamber (14), wherein the bearing surface (2) forms abutment flanks (5) for the edge mounting of each substrate (3). In order to reduce the free susceptor surface to a minimum, it is proposed that the abutment flanks of the lateral walls (5) are formed by bases (4) which project from the bearing surface (2) and are separated at a distance from one another. Said bases are arranged on the corner points (10) of a honeycomb structure and have an outline essentially corresponding to an equilateral triangle with inwardly curved sides (5).