Abstract: The invention relates to a method for coating one or more substrates with a layer the components of which are passed into a process chamber (7) in the form or at least two gases by means of a gas inlet element. The gases are introduced into respective chambers (1, 2) of the gas inlet element that arranged one on top of the other and enter the process chamber (7) through gas outlet openings (3, 4) leading to the process chamber (7). The aim of the invention is to improve the aforementioned method or aforementioned device for producing homogeneous layers. For this purpose, each of the two chambers is subdivided into two compartments (1a, 1b; 2a, 2b) each which are arranged one on top of the other to be substantially congruent.

Abstract: An ignition coil, in particular for an internal combustion engine of a motor vehicle, having a secondary winding situated on a coil body for the production of a high voltage at a spark plug, having a contact sleeve that electrically contacts the secondary winding and that is capable of being pushed over an end area of the coil body and that has at least one contact element for the secondary winding, and having a holding-down element that can be pushed over the contact sleeve and that acts on the at least one contact element of the contact sleeve. In its end position, the holding-down element protrudes beyond the at least one contact element of the contact sleeve, seen in the axial direction of the coil body, and covers the at least one contact element.

Abstract: The invention relates to a source arrangement of a VPE deposition device, comprising a container (2) containing a liquid or solid starting material (1) and having a top opening, a feed line (3) for a reactive gas (4) which reacts with the starting material (1) in order to produce a process gas (5) that contains the starting material. The aim of the invention is to temporally stabilize the source reaction. For this purpose, a cover (6) rests directly on the starting material (1) and defines a volume (8) between the cover and the surface (7) of the starting material (1), the reactive gas (4) flowing through said volume and the feed line (3) running into it.

Abstract: The invention relates to an apparatus for the deposition of one or more layers on a substrate (4), which comprises a process chamber (2) which is arranged in a reactor housing (1) and has a heatable bottom (3) on which the substrate rests and a lid (5) extending parallel to the bottom (3) and also a gas inlet facility (6) for introduction of process gases. The distance (H) between the process chamber lid (5) and the process chamber bottom (3) can be reduced to virtually zero. A cooling apparatus (7) by means of which the process chamber lid (5) is cooled in the process position during deposition of the layers is provided above the process chamber lid (5), with the distance between the cooling apparatus (7) and the process chamber lid (5) increasing as the distance (H) between the process chamber lid (5) and the process chamber bottom (3) is reduced.

Abstract: The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (4), extending in a vertical direction, of a gas inlet member (3), fixed in place with respect to a reactor housing, into a process chamber (1), extending in a horizontal direction, wherein the process gas leaves a gas outlet opening of a portion of the gas inlet member (3), protruding into the centre of the rotationally symmetrical process chamber (1), and flows in a radially outward direction via a base (8?) of the process chamber (1), extending in a horizontal direction and rotating about the centre, on which base the substrate lies. In order to improve the gas flow directly above the base of the process chamber, it is proposed that the front (3?) of the gas inlet member (3) protrudes into a pot-like recess (23) and an end portion (6?) of a gas deflecting face (6) is flush with the base (8?).

Abstract: The invention relates to a device for depositing at least one layer on a substrate having one or more susceptors (7) for receiving substrates, comprising a substrate holder (6) that can be rotatably driven and forms the bottom of a process chamber (2), a RF heating system (22) disposed below the susceptor holder (6) and a gas inlet element (4) for introducing process gases into the process chamber. In order to further develop the generic device and to improve the production and advantages of use, it is proposed that the susceptor holder (6) lies in a sliding manner on an essentially IR- and/or RF-permeable supporting plate (14).

Abstract: The invention relates to a device for holding at least one substrate (2) in a process chamber (3) of a reactor housing (15), comprising an attack area (4) for the attack of a handling device and a bearing area (5) upon which the substrate (2) rests with at least the edge (2?) thereof. In order to etch the deposited gallium nitrite layer in relation to the substrate, it is impinged upon with a laser jet from the bottom up. The bearing area (5) is transparent for the wavelength (1) of an optical substrate treatment process.

Abstract: The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber (5) consisting of a number of wall elements (1, 2, 3, 4), said wall elements (1, 2, 3, 4) being electroconductive and placed end-to-end, thus forming contacts (2?, 2?, 3?, 3?); a reactor housing (6) enclosing the wall elements (1, 2, 3, 4) of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements (1, 2, 3, 4) of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe (8) is implanted between the reactor housing (6) and the walls (1, 2, 3, 4) of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls (1, 2, 3, 4) of the treatment chamber.

Abstract: A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber having a cover plate that is situated at a distance from the support plate; and a gas outlet ring formed of solid graphite which forms the outer limit of the process chamber and which has a plurality of radial gas outlets.

Abstract: A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterized in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.

Abstract: The invention relates to a CVD reactor which comprises a process chamber, disposed inside a reactor housing and having process chamber walls, a process chamber bottom and a process chamber ceiling spaced apart by a distance from the process chamber bottom. The reactor housing comprises at least one reactor wall which can be slightly elastically deformed when the pressure within the reactor housing changes. Said reactor wall is provided with an especially center opening through which a functional element projects. Said functional element is firmly linked via a first section with a process chamber wall and has a second section that is located outside the reactor housing. In order to increase the reproducibility of results, the functional element is linked with the reactor wall so as to elastically yield.

Abstract: The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.

Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

Abstract: A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum tight manner. The reaction chamber is further characterized by a combination of the following features: a support plate with coolant channels, and at least one opening for an HF line; an HF line collar in the zone disposed in the reaction chamber, a first seal on the collar; a first disc from an insulating material between a second seal on the support plate and the first seal on the collar; a thread in the zone outside the reaction chamber, a screw element being screwed onto the thread, all configured to prevent an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.

Abstract: The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from above, by a reactor housing opening which may be sealed by a cover. The reactor housing opening opens out into a glove box, in particular flushed with highly pure gas and connects electricity, liquid or gas supply lines to the cover. According to the invention, the connection of supply lines for electricity, fluid or gas sources arranged outside the glove box to the cover of the reactor housing arranged within the glove box may be improved, whereby the electricity, fluid or gas supply lines run freely, from outside the glove box, through a flexible tube which is sealed atone end to a flange arrangement rigidly fixed to the cover and sealed at the other end to an opening in the glove box wall.

Abstract: The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably driven by a gas flow flowing in a feed pipe associated with said floor. Said substrate holder is disposed in a bearing cavity on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity is associated with a tray-shaped element arranged below the outflow of the feed pipe.

Abstract: The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably driven by a gas flow flowing in a feed pipe associated with said floor. Said substrate holder is disposed in a bearing cavity on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity is associated with a tray-shaped element arranged below the outflow of the feed pipe.

Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more substrates, especially substrates which are also crystalline, in a process chamber, using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device comprises a reverse-heatable support plate which forms a wall of the process chamber and which can especially be heated with a high frequency, consisting of especially inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber, said process chamber having a circular cross-section, and which is allocated to a cover plate that is situated at a distance from the support plate; and a gas outlet ring which forms the outer limit of the process chamber and which has a plurality of radial gas outlets. According to the invention, the gas outlet ring consists of solid graphite in order to keep the isothermal profile inside the process chamber as flat as possible.

Abstract: The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.