Abstract: A method of forming a copper film on a substrate is described. The copper film is formed using a cyclical deposition technique by alternately adsorbing a copper-containing precursor and a reducing gas on a substrate. The copper film formation is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the copper film may be used as interconnect metallization.

Abstract: Chemical Vapor Deposition of copper films is enhanced by simultaneously introducing in the reactor vapor of an organometallic copper precursor and copper complex vapor of a volatile ligand or the hydrate of the ligand.

Abstract: Novel volatile barium complexes are disclosed which are very stable and evaporate cleanly at elevated temperatures. Such complexes are highly suited for use as a barium source in OMCVD processes.

Abstract: An improved method is provided for depositing a thin copper aluminum alloy film on a patterned silicon substrate. A copper base layer conforming to the existing pattern is initially formed on the surface of the substrate, followed by contact with vapors of an aminealane compound, which causes aluminum to be selectively deposited on the copper base layer portion of the substrate. Preferably, copper is applied to a diffusion barrier surface such as tungsten using chemical vapor deposition from a complex of copper (I) perfluoroalkyl-.beta.-diketonate and an olefin or silylolefin. The entire process of developing an alloy film can be carried out without exceeding 200.degree. C.

Abstract: Volatile .beta.-diketonate alkaline earth metal complexes useful in chemical vapor deposition (CVD) operations are formed using a cyclic ligand, such as a macrocyclic crown ether, to increase the degree of coordination and shielding around the individual metal ions in the diketonate structure. The resultant monomeric complexes readily volatize to give a chemically stable vapor.

Abstract: This invention is a residue-free vapor-phase process for etching metallic layers during the manufacturing of integrated circuits. The process comprises contacting a portion of the metallic surface to be etched with an effective amount of an etching agent comprising a .beta.-diketone or .beta.-ketoimine dispersed in an atmosphere capable of oxidizing the metal to be removed at a temperature sufficient to form a volatile metal-ligand complex. The volatile metal-ligand complex is sublimed from the surface thereby etching successive layers of the metal.

Abstract: Volatile liquid or low melting solid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. These organometallic copper complexes are represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H, F or C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.4 is C.sub.1 -C.sub.8 alkyl, phenyl, or Si(R.sup.5).sub.3, and each R.sup.5 is independently C.sub.1 -C.sub.8 alkyl or phenyl. A process for depositing copper films using these organometallic copper complexes is also provided.

Abstract: Volatile liquid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. There organometallic copper complexes are represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H, F or C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.4 is H, C .sub.1 -C.sub.8 alkyl, or Si(R.sup.6).sub.3, each R.sup.5 is independently H or C.sub.1 -C.sub.8 alkyl and each R .sup.6 is independently phenyl or C.sub.1 -C.sub.8 alkyl. A process for depositing copper films using these organometalic copper complexes is also provided.

Abstract: A process is provided for selectively depositing copper films on metallic or other electrically conducting portions of substrate surfaces by contacting the substrate at a temperature from 110.degree. to 190.degree. C. with a volatile organometallic copper complex, in the gas phase, represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H or C.sub.1 -C.sub.8 perfluoroalkyl and L is carbon monoxide, an isonitrile, or an unsaturated hydrocarbon ligand containing at least one non-aromatic unsaturation.

Abstract: This invention is a residue-free cleaning process for removing metal-containing contaminants from a surface of a substrate of the type used in manufacturing semi-conductor devices. The process comprises contacting the substrate with an effective amount of a cleaning agent comprising a .beta.-diketone or .beta.-ketoimine dispersed in an atmosphere capable of oxidizing the metal-contaminants at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate. The volatile metal-ligand complexes are sublimed from the surface of the substrate leaving essentially no residue.

Abstract: Volatile liquid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. These organometallic copper complexes are represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H, F or C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.4 is H, C.sub.1 -C.sub.8 alkyl, or Si(R.sup.6).sub.3, each R.sup.5 is independently H or C.sub.1 --C.sub.8 alkyl and each R.sup.6 is independently phenyl or C.sub.1 -C.sub.8 alkyl. A process for depositing copper films using these organometallic copper complexes is also provided.

Abstract: A residue-free fluxing process wherein the active fluxing agent comprises a .beta.-diketone or .beta.-ketoimine ligand. Such ligands react with surface metal oxides on workpieces to be soldered to form volatile metal-ligand complexes as reaction products which are sublimed from the surface leaving essentially no residue on the workpieces. The fluxing agents can be utilized in gas-phase processes wherein the workpieces are contacted with an effective amount of one or more ligands which are dispersed in a carrier gas or solvent or by incorporating the ligands into an alloy-vehicle mixture for use as conventional creams or pastes. The invention eliminates the need for post-reflow cleaning using solvents since no flux residue remains on the workpieces to be soldered following volitilization of the metal-ligand complex.

Abstract: A process for the vapor-phase synthesis of non-adduct volatile fluorinated and non-fluorinated metal-ligand complexes comprising contacting a .beta.-diketone or .beta.-ketoimine ligand with an inert carrier gas to vaporize the ligand, reacting the vaporized ligand with a metal species at a temperature sufficient to form the metal-ligand complex and recovering the metal-ligand complex by sublimation. The process is conducted in the absence of solvent thereby providing pure non-adduct metal-ligand complexes. Such complexes are particularly suited for specialty applications requiring use of high purity compounds.

Abstract: A residue-free fluxing process wherein the active fluxing agent comprises a .beta.-diketone or .beta.-ketoimine ligand. Such ligands react with surface metal oxides on workpieces to be soldered to form volatile metal-ligand complexes as reaction products which are sublimed from the surface leaving essentially no residue on the workpieces. The fluxing agents can be utilized in gas-phase processes wherein the workpieces are contacted with an effective amount of one or more ligands which are dispersed in a carrier gas or solvent or by incorporating the ligands into an alloy-vehicle mixture for use as conventional creams or pastes. The invention eliminates the need for post-reflow cleaning using solvents since no flux residue remains on the workpieces to be soldered following volatilization of the metal-ligand complex.

Abstract: Fluorinated .beta.-ketoimine ligands and highly volatile .beta.-ketoiminato metal complexes of the ligands are synthesized by silylating a fluorinated .beta.-diketone to form a silylenolether, and subsequently reacting the silylenolether with a primary amine to form the desired ligand having the structural formula: ##STR1## wherein R.sub.1 and R.sub.2 are independently linear or branched perfluorinated, C.sub.1 -C.sub.8 alkyl groups and R.sub.3 is a phenyl or C.sub.1 -C.sub.8 alkyl, hydroxyalkyl, or ether group, all of which can be partially or fully fluorinated. The corresponding metal complex is formed by treating the ligand with a metal halide.

Abstract: Fluorinated .beta.-ketoimine ligands and highly volatile .beta.-ketoiminato metal complexes of the ligands are synthesized by silylating a fluorinated .beta.-diketone to form a silylenolether, and subsequently reacting the silylenolether with a primary amine to form the desired ligand having the structural formula: ##STR1## wherein R.sub.1 and R.sub.2 are independently linear or branched perfluorinated, C.sub.1 -C.sub.8 alkyl groups and R.sub.3 is any organic functionality such as a C.sub.1 -C.sub.8 alkyl, phenyl or hydroxyalkyl group, all of which can be partially or fully fluorinated. The corresponding metal complex is formed by treating the ligand with a metal halide.

Abstract: A process for absorbing olefinically-unsaturated hydrocarbon compounds from feedstreams containing such compounds by contacting said feed streams with metal-diketone absorbents of the formula: ##STR1## wherein R.sub.1 is trichloroemthyl or R.sub.F ; R.sub.F is C.sub.n F.sub.2n+1 and n is 1-8; R.sub.2 is H or hydrocarbyl of 2-20 carbon atoms having at least one olefinic unsaturated bond; M.sup.I is Cu.sup.I or Ag.sup.I and R.sub.3 is hydrocarbyl of 2-20 carbon atoms having at least one olefinic unsaturated bond.

Abstract: A process for absorbing carbon monoxide and/or olefinically-unsaturated compounds from feedstreams containing such compounds by contacting the feed streams with metal-diketone absorbents of the formula: ##STR1## wherein R.sub.1 is trichloromethyl or R.sub.F ; R.sub.F is C.sub.n F.sub.2n+1 and n is 1-8; R.sub.2 is H or hydrocarbyl of 2-20 carbon atoms having at least one olefinic unsaturated bond; M.sup.I is Cu.sup.I or Ag.sup.I and R.sub.3 is hydrocarbyl of 2-20 carbon atoms having at least one olefinic unsaturated bond.

Abstract: Novel compounds for absorbing carbon monoxide and olefinically-unsaturated compounds from feedstreams are of the formula ##STR1## wherein R.sub.1 is trichloromethyl or R.sub.F ; R.sub.F is C.sub.n F.sub.2n+1 and n is 1-8; R.sub.2 is H or hydrocarbyl of 2-20 carbon atoms having at least one olefinic unsaturated bond; M.sup.I is Cu.sup.I or Ag.sup.I and R.sub.3 is hydrocarbyl of 2-20 carbon atoms having at least one olefinic unsaturated bond.

Abstract: Chemical Vapor Deposition of copper films is enhanced by simultaneously introducing in the reactor vapor of an organometalic copper precursor and .?.copper complex.!. vapor of a volatile ligand or the hydrate of the ligand.