Abstract: A method of stir welding T-joints comprises assembling and stir welding first and second members. The first member comprises a sheet portion of material and also comprises restraining surfaces. The second member comprises a rib. The rib is stir welded to the sheet portion with the edge margin of the rib being positioned between the restraining surfaces of the first member. During stir welding, the restraining surfaces of the first member limit movement of the rib relative to the first member. A tooling portion is preferably formed as a contiguous portion of the material of one of the first and second members. The first and second members are secured to a stir welding apparatus via the tooling portion during the stir welding. The method yet further comprises a step of separating the tooling portion from the first and second members after forming the stir welded T-joint.

Abstract: An exemplary embodiment of the present invention is a method and system for performing computer system cloning. A program on a client system requests a system image and a system customization from a server system. Space requirements are received from the server system and then the client system uses these space requirements to set up temporary storage space. An image file corresponding to the system image that was requested is then received from the server system and stored in the temporary storage space. The client system then recreates the system image from the image files. The image files are then deleted from the temporary storage space on the client system. A customization file corresponding to the requested system customization is then received from the server system and stored in the temporary storage space on the client system. The customization file is applied to the system image on the client system and then the temporary storage space is deleted.

Abstract: A system for transmitting instructions from a master control facility (50) to a number of remotely located player units (11-14). The remotely located player units communicate through a mobile cell site (10). Cellular communication links (16) are provided to link the remote units (11-14) to cell site (10). Cell site (10) is linked to a satellite arrangement (20) via a communication link (21). The master control facility is linked to the satellite arrangement via communication link (23).

Abstract: A communications device transmitting and receiving RF signals having an antenna including an antenna core, a plurality of first polarized antenna elements wound about the antenna core in a first direction, a plurality of second polarized antenna elements wound about the antenna core in a second direction, and a plurality of RF PIN diodes inserted in the plurality of first and second polarized antenna elements at the points where the plurality of first polarized antenna elements and the second polarized antenna elements overlap. A communications device and method for decreasing fading of a call due to multipath by switching between polarizations of the antenna when the power level of the RF signals drops below a predetermined threshold. A communications device and method for decreasing fading of a call by averaging power levels on both polarizations of the antenna.

Abstract: A method and apparatus for authenticating subscriber units (30) and users (25) in a communications system includes a communications node (200) which receives biometric information describing a user (25), and measures an RF signature of the subscriber unit (30). The biometric information and RF signature are compared against a valid user profile to determine authenticity of the user (25) and the subscriber unit (30). The biometric information can include retinal scan data, fingerprint data, or other data. The RF signature can include spectral content, phase or frequency characteristics, or other identifying features.

Abstract: A high working pressure air sequencer has a manifold to which are connected a high pressure air inlet and a plurality of outlets to which high pressure air is to be distributed. A rotary valve head is located within the manifold, and sequentially couples the air inlet to a different outlet. The valve head includes an outlet button which includes a bore which sequentially aligns with the outlet bores. Both the outlet button bore and the outlet bore portions with which the button bore aligns are of geometries which provide a rapid transition between coupled and uncoupled air passage conditions.

Abstract: A fan blower apparatus for use in connection with circular knitting machines includes a relatively small diameter frame to which a drive motor is mounted. The drive motor rotates an L-shaped platform about a vertical axis. The platform supports a fan unit journaled for rotation about a vertical axis. A belt system utilizes the rotation of the platform about the vertical axis to provide a drive motor to rotate the fan unit about the horizontal axis. An integral air spray system may be incorporated into the frame to provide a cleansing air spray for the fan unit as it operates.

Abstract: A population of locatable personal detection units (PDUs) (20) are worn by users. Any number of locators (14) are placed at known locations within an area (10) where the users tend to be. When an alarm event for an individual user occurs, a request signal is transmitted from the user's PDU (20). The request signal is received at several of the locators (14), each of which measure the power level of the request signal. A central computer (16) selects some of these locators (14) in response to the power level measurements. In sequence, the selected locators (14) transmit an interrogation signal to the PDU (20), the PDU (20) replies to the interrogation signal, and the locators (14) measure the duration transpiring between the interrogation and the reply. Based on the durations measured for at least three of the locators, the central computer (16) uses a multilateration process to localize the PDU (20).

Abstract: A fan guard for use in connection with a textile fan blower is of minimal surface area to intrude upon the air flow or collect lint or debris. The guard has a plurality of fingers joined together by a mounting ring. The fingers are annexed in a spoke-like configuration to embrace the fan blades, and are free of additional interconnections along their length. The ends of the fingers are located so as to create an open central exhaust corridor for the fan.

Abstract: A cleaning apparatus for use in conjunction with textile blowers of the type having a blower mounted to a rotating arm includes a pneumatic coupling to pass compressed air from a stationary source to a nozzle assembly mounted to the rotating arm. The coupling may include a valve which operates periodically during the arm rotation to pass the compressed air on an intermittent basis. The nozzle assembly may preferably include a plurality of nozzles arrayed in a common plane to form a curtain of air which impinges on the blower to remove accumulated lint and other debris therefrom.

Abstract: An apparatus for removing lint and debris from circular knitting machines has a rotating arm positioned such that its distal end sweeps about the periphery of the machine. A fan motor unit located at the distal end is mounted for 360 degree rotation in a plane perpendicular to the plane of arm rotation, allowing the sweep of air to contact both the machine surface as well as adjacent areas. The fan/motor unit is preferably rotated by an arm mounted rotation motor, coupled to the unit by a commutator. The rotational rates of the central drive and the rotation drive are chosen to allow the path about the machine circumference described by the fan/motor unit to vary upon successive arm revolutions to insure a fan sweep over all machine surfaces.

Abstract: Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the <100> <110>, and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: Effluent process gases, particularly those employed in the production and processing of solid state electronic components, are cracked to form products having a condensed phase, which may be separated from the flowing process gas. A plasma trap comprises a high frequency coil for producing a plasma therein. The walls of the trap may be cooled and the trap may employ a removable wall on which the cracked product collects. Particular gases that may be treated are arsine, phosphine, disilane, silane, germane, organometallics and gases containing beryllium and boron.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconducutors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: A fore line trap is located before the forepump in a vacuum system. The trap utilizes a cracker, which may be a heated filament or a plasma, and cold walls. The cracker cracks pnictide gas species such as P.sub.4 into other species such as P.sub.2 which have a higher sticking co-efficient. The pnictides are deposited on the cold walls. The cold walls preferably comprise a sleeve which may be removed from the trap and replaced by a clean one.

Abstract: High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Abstract: MP.sub.15, where M is an alkali metal is used in a generator of P.sub.4 gas. KP.sub.15 is preferred. The generator is heated to produce the P.sub.4 gas. The generator may be used in various deposition processes such as chemical vapor deposition, vacuum evaporation, and molecular beam deposition. It is particularly useful in high vacuum processes below 10.sup.-3 Torr, particularly below 10.sup.-4 Torr such as vacuum evaporation and molecular beam deposition, for example vapor phase epitaxy and molecular beam epitaxy.

Abstract: A method and apparatus are provided for producing fine quality pnictide films by vacuum evaporation and molecular beam deposition. A pnictide source, preferably phosphorous, is heated to produce a continuous supply of vapor species, preferably P.sub.4. The vapor species is cracked by a heated tungsten wire positioned adjacent the pnictide source to produce P.sub.2 molecules. A second tungsten wire cracker is located adjacent a substrate to prevent the recombination of P.sub.2 molecules into P.sub.4 molecules. The P.sub.2 molecules are deposited on the substrate and condense into amorphous pure phosphorous shiny red films. A separate source of alkali metal intercalate, preferably KC.sub.8, may also be heated to provide an alkali metal vapor for producing films of alkali metal polypnictide films, preferably KP.sub.x where x is equal to or greater than 15, to be deposited on the substrate.