Abstract: A method of configuring a charged particle beam system is provided. The method comprises providing an initial configuration matrix of the charged particle beam system, relating a plurality of charged particle beam system settings to respective configurations of one or more beam influencing elements, and providing a configuration matrix M from the initial configuration matrix; determining a correlation matrix C corresponding to the configuration matrix M, the correlation matrix C describing an influence of configurations of the one or more beam influencing elements on at least one beam spot parameter of a charged particle beam; replacing the configuration matrix M based upon the correlation matrix C; and iteratively repeating a diagonalization iteration of determining the correlation matrix C corresponding to the configuration matrix M, and replacing the configuration matrix M, until the correlation matrix C corresponding to the configuration matrix M fulfills a diagonalization criterium.

Abstract: A method of determining a beam convergence of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system (100), comprising: (a) taking one or more images (h1 . . . N) of the sample when the sample is arranged at one or more defocus distances (z1 . . . N) from a respective beam focus of the charged particle beam, and retrieving one or more retrieved beam profiles (g1 . . . N) from the one or more images (h1 . . . N); (b) simulating one or more beam profiles at the one or more defocus distances (z1 . . . N) based at least on an estimated beam convergence value (initialC) of the charged particle beam to provide one or more simulated beam profiles (g?1 . . . N); (c) determining a magnitude (R) of a difference between the one or more simulated beam profiles (g?1 . . . N) and the one or more retrieved beam profiles (g1 . . .

Abstract: An aberration corrector. The aberration corrector including a first plurality of magnetic elements, each magnetic element comprising a magnetic pole and a corresponding magnetic rod for providing a magnetic field to the magnetic pole. The first plurality of magnetic elements including at least a first magnetic element, the first magnetic element including a first magnetic pole; a first magnetic rod having a proximal end adjacent to the first magnetic pole and a distal end opposite the proximal end; the proximal end having a tip with a tip surface in a shape of a semi-spheroid; and a contact point of the tip surface contacts the first magnetic pole.

Abstract: A charged particle evaluation system that includes (a) a controller; (b) a charged particle emitter configured to emit charged particles that exhibit a charged particle emitter energy spread; and (c) optics that is configured to perform evaluations of a sample, and to measure the charged particle emitter energy spread. The controller is configured to set the charged particle emitter energy spread to a shared charged particle emitter energy spread that is shared between a group of charged particle evaluation systems.

Abstract: According to an embodiment, a method of correcting an astigmatism and adjusting a numerical aperture of a charged particle beam is described. The astigmatism is corrected and the numerical aperture is adjusted with a double stigmator. The double stigmator has a first stigmator and a second stigmator. The method comprises correcting the astigmatism of the charged particle beam with the second stigmator of a double stigmator; and adjusting the numerical aperture of the charged particle beam with the first stigmator of the double stigmator. The first stigmator and the second stigmator are spaced apart along an optical axis.

Abstract: An apparatus for a charged particle beam device is described. The charged particle beam device includes: a magnetic lens with a coil carrier; at least one pole piece; and an electrical insulator configured to electrically insulate the coil carrier and the at least one pole piece from each other.

Abstract: A method of determining an energy spectrum or energy width of a charged particle beam (11) focused by a focusing lens (120) toward a sample plane (pS) in a charged particle beam imaging device is described. The method includes (a) introducing an energy-dependent deflection of the charged particle beam (11) that leads to a spot broadening along a dispersion axis in the sample plane (pS), and taking an image of a sample (10) arranged in the sample plane using the charged particle beam; (b) retrieving a beam profile of the charged particle beam from the image; and (c) determining the energy spectrum or energy width from the beam profile. Further embodiments described herein relate to a charged particle beam imaging device configured to determine the energy spectrum or energy width of a charged particle beam, particularly according to any of the methods described herein.

Abstract: A method of generating a computational model for determining one or more aberration coefficients of a charged particle beam focused by a focusing lens towards a specimen is described. The method includes obtaining a plurality of input data associated with a plurality of beam spot information for a plurality of defocus settings; obtaining a plurality of one or more aberrations coefficients associated with corresponding input data of the plurality of input data; providing a training data set including the plurality of aberrations coefficients and the corresponding input data; and producing or generating the computational model by machine learning from the training data set. The computational model is also used for determining one or more aberration coefficients.

Abstract: A method of forming a multipole device (100) for influencing an electron beam (11) is provided. The method is carried out in an electron beam apparatus (200) that comprises an aperture body (110) having at least one aperture opening (112). The method comprises directing the electron beam (11) onto two or more surface portions of the aperture body (110) on two or more sides of the at least one aperture opening (112) to generate an electron beam-induced deposition pattern (120) configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern (120) can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.

Abstract: A corrector for correcting aberrations of a charged particle beam in a charged particle beam device is described. The corrector includes a plurality of wires configured to be in a plane perpendicular to a beam axis. The wires forming two or more openings for passing of the charged particle beam through the two or more openings. The plurality of wires includes at least a first wire having a first connector configured to provide a first voltage to the first wire and a second wire having a second connector configured to provide a second voltage to the second wire. The second voltage being different than the first voltage.

Abstract: A method of determining a brightness (Br) of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam imaging device (100) is described. The method includes (a) taking one or more images (hf, 1 . . . N) of the sample with the charged particle beam imaging device; (b) retrieving one or more beam profiles (gf, 1 . . . N) of the charged particle beam from the one or more images; and (c) determining the brightness (Br) of the charged particle beam (11) based on at least the one or more beam profiles (gf, g1 . . . N), a probe current (Ip) of the charged particle beam, and a landing potential (LE) of the charged particle beam. Optionally, the brightness (Br) determined as above can be used for determining a size (Dvirt) of a source (105) of the charged particle beam (11). Further, a charged particle beam imaging device (100) configured for any of the methods described herein is provided.

Abstract: A method of characterizing a detection path in a charged particle beam system having a primary charged particle beam, comprising positioning a charged particle mirror having a curved equipotential surface on a sample stage of the charged particle beam system; varying a reflection angle of the primary charged particle beam at the curved equipotential surface by varying a relative mirror position of the charged particle mirror, the curved equipotential surface being at a distance to a surface of the charged particle mirror, recording a plurality of detector signals of at least one detector of the charged particle beam system for a plurality of relative mirror positions; wherein varying a relative mirror position of the charged particle mirror comprises varying at least one of a mirror position of the charged particle mirror and a primary charged particle beam position with respect to each other in at least one dimension.

Abstract: A method of determining a beam convergence of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system (100), comprising: (a) taking one or more images (h1 . . . N) of the sample when the sample is arranged at one or more defocus distances (z1 . . . N) from a respective beam focus of the charged particle beam, and retrieving one or more retrieved beam profiles (g1 . . . N) from the one or more images (h1 . . . N); (b) simulating one or more beam profiles at the one or more defocus distances (z1 . . . N) based at least on an estimated beam convergence value (initialC) of the charged particle beam to provide one or more simulated beam profiles (g?1 . . . N); (c) determining a magnitude (R) of a difference between the one or more simulated beam profiles (g?1 . . . N) and the one or more retrieved beam profiles (g1 . . .

Abstract: A method of determining an energy spectrum or energy width of a charged particle beam (11) focused by a focusing lens (120) toward a sample plane (pS) in a charged particle beam imaging device is described. The method includes (a) introducing an energy-dependent deflection of the charged particle beam (11) that leads to a spot broadening along a dispersion axis in the sample plane (pS), and taking an image of a sample (10) arranged in the sample plane using the charged particle beam; (b) retrieving a beam profile of the charged particle beam from the image; and (c) determining the energy spectrum or energy width from the beam profile. Further embodiments described herein relate to a charged particle beam imaging device configured to determine the energy spectrum or energy width of a charged particle beam, particularly according to any of the methods described herein.

Abstract: An aberration corrector. The aberration corrector including a first plurality of magnetic elements, each magnetic element comprising a magnetic pole and a corresponding magnetic rod for providing a magnetic field to the magnetic pole. The first plurality of magnetic elements including at least a first magnetic element, the first magnetic element including a first magnetic pole; a first magnetic rod having a proximal end adjacent to the first magnetic pole and a distal end opposite the proximal end; the proximal end having a tip with a tip surface in a shape of a semi-spheroid; and a contact point of the tip surface contacts the first magnetic pole.

Abstract: A method of forming a multipole device (100) for influencing an electron beam (11) is provided. The method is carried out in an electron beam apparatus (200) that comprises an aperture body (110) having at least one aperture opening (112). The method comprises directing the electron beam (11) onto two or more surface portions of the aperture body (110) on two or more sides of the at least one aperture opening (112) to generate an electron beam-induced deposition pattern (120) configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern (120) can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.

Abstract: A charged particle beam chromatic aberration corrector is described. The charged particle beam chromatic aberration corrector includes a plurality of electrical conductors forming a segmented Wien filter including a plurality of Wien filter segments having at least a first Wien filter segment and a second Wien filter segment, wherein the first Wien filter segment is arranged for traversal of a first portion of the charged particle beam, and the second Wien filter segment is arranged for traversal of a second portion of the charged particle beam; and a power supply system configured for generating different electric fields and different magnetic fields for the first Wien filter segment and second Wien filter segment.

Abstract: A corrector for correcting aberrations of a charged particle beam in a charged particle beam device is described. The corrector includes a plurality of wires configured to be in a plane perpendicular to a beam axis. The wires forming two or more openings for passing of the charged particle beam through the two or more openings. The plurality of wires includes at least a first wire having a first connector configured to provide a first voltage to the first wire and a second wire having a second connector configured to provide a second voltage to the second wire. The second voltage being different than the first voltage.

Abstract: A method of determining a brightness (Br) of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam imaging device (100) is described. The method includes (a) taking one or more images (hf, 1 . . . N) of the sample with the charged particle beam imaging device; (b) retrieving one or more beam profiles (gf, 1 . . . N) of the charged particle beam from the one or more images; and (c) determining the brightness (Br) of the charged particle beam (11) based on at least the one or more beam profiles (gf, g1 . . . N), a probe current (Ip) of the charged particle beam, and a landing potential (LE) of the charged particle beam. Optionally, the brightness (Br) determined as above can be used for determining a size (Dvirt) of a source (105) of the charged particle beam (11). Further, a charged particle beam imaging device (100) configured for any of the methods described herein is provided.

Abstract: It is provided a current measurement module 100 for measuring a current of a primary charged particle beam 123 of a charged particle beam device, the current measurement module 100 including a detection unit 160 configured for detecting secondary and/or backscattered charged particles 127 released on impingement of the primary charged particle beam 123 on a conductive surface 142 of a beam dump 140 of the charged particle beam device.