Patents by Inventor John Claassen Roberts

John Claassen Roberts has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device isolation design rules for HAST improvement
    Patent number: 11018220
    Abstract: Structures and methods for isolating semiconductor devices and improving device reliability under harsh environmental conditions are described. An isolation region may be formed by ion implantation in a region of semiconductor surrounding a device. The implantation region may extend into streets of a wafer. A passivation layer may be deposited over the implantation region and extend further into the streets than the isolation region to protect the isolation region from environmental conditions that may adversely affect the isolation region.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: May 25, 2021
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Allen W. Hanson, Wayne Mack Struble, John Claassen Roberts
  • III-nitride semiconductor structures comprising low atomic mass species
    Patent number: 10211294
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: February 19, 2019
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, Jr.
  • PARASITIC CHANNEL MITIGATION VIA REACTION WITH ACTIVE SPECIES
    Publication number: 20190013196
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: July 10, 2017
    Publication date: January 10, 2019
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • DEVICE ISOLATION DESIGN RULES FOR HAST IMPROVEMENT
    Publication number: 20180308927
    Abstract: Structures and methods for isolating semiconductor devices and improving device reliability under harsh environmental conditions are described. An isolation region may be formed by ion implantation in a region of semiconductor surrounding a device. The implantation region may extend into streets of a wafer. A passivation layer may be deposited over the implantation region and extend further into the streets than the isolation region to protect the isolation region from environmental conditions that may adversely affect the isolation region.
    Type: Application
    Filed: April 19, 2018
    Publication date: October 25, 2018
    Inventors: Allen W. Hanson, Wayne Mack Struble, John Claassen Roberts
  • PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION
    Publication number: 20180158685
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: October 23, 2017
    Publication date: June 7, 2018
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventor: John Claassen Roberts
  • III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED IMPLANTED SPECIES
    Publication number: 20180122928
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 25, 2017
    Publication date: May 3, 2018
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
  • PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EARTH NITRIDE DIFFUSION BARRIER REGIONS
    Publication number: 20180026098
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: June 5, 2017
    Publication date: January 25, 2018
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Kevin J. Linthicum, John Claassen Roberts
  • Parasitic channel mitigation via back side implantation
    Patent number: 9799520
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: October 24, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventor: John Claassen Roberts
  • III-nitride semiconductor structures comprising spatially patterned implanted species
    Patent number: 9773898
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: September 26, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
  • Parasitic channel mitigation via reaction with active species
    Patent number: 9704705
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: July 11, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, Jr.
  • Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
    Patent number: 9673281
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: June 6, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: Kevin J. Linthicum, John Claassen Roberts
  • Parasitic channel mitigation in III-nitride material semiconductor structures
    Patent number: 9627473
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: April 18, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, Jr.
  • PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EARTH NITRIDE DIFFUSION BARRIER REGIONS
    Publication number: 20170069717
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: Kevin J. Linthicum, John Claassen Roberts
  • III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING LOW ATOMIC MASS SPECIES
    Publication number: 20170069720
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION
    Publication number: 20170069743
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: John Claassen Roberts
  • PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SPECIES
    Publication number: 20170069742
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • METHODS OF SPATIALLY IMPLANTING SPECIES IN III-NITRIDE SEMICONDUCTOR STRUCTURES
    Publication number: 20170069500
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
  • PARASITIC CHANNEL MITIGATION USING ALUMINUM NITRIDE DIFFUSION BARRIER REGIONS
    Publication number: 20170069716
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum
  • PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES
    Publication number: 20170069713
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, JR.
  • III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED IMPLANTED SPECIES
    Publication number: 20170069746
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson