Abstract: The present invention relates to improved decorin compositions and methods of their production.

Abstract: A silicon-based electrode forms an interface with a layer pair being: 1. a thin, semi-dielectric layer made of a lithium (Li) compound, e.g. lithium fluoride, LiF, disposed on and adheres to the electrode surface of the silicon-based electrode and 2. an molten-ion conductive layer of a lithium containing salt (lithium salt layer) disposed on the semi-dielectric layer. One or more device layers can be disposed on the layer pair to make devices such as energy storage devices, like batteries. The interface has a low resistivity that reduces the energy losses and generated heat of the devices.

Abstract: A Lithium energy storage device comprising a cathode, electrolyte, anode, and substrate. The materials contained in the anode and electrolyte region are electrochemically altered during initial formation and exposed to current cycles to create a lower impedance composite anode. The resulting composite anode bottom is a bi-layer comprising: i. a lithium metal layer and ii. a silicon-based interphase layer. The bi-layer acts as a barrier to inhibit Lithium ions from entering or leaving a Lithium saturated substrate, once the interphase surface is formed and the substrate is saturated with Lithium ions. This prevents cell failure from large volume changes/stresses during charge/discharge cycles and enables a significant decrease in cell impedance to enable better rechargeable cell performance.

Abstract: A method of forming a semiconductor structure includes forming at least one trench in a non-porous silicon substrate, the at least one trench providing an energy storage device containment feature. The method also includes forming an electrical and ionic insulating layer disposed over a top surface of the non-porous silicon substrate. The method further includes forming, in at least a base of the at least one trench, a porous silicon layer of unitary construction with the non-porous silicon substrate. The porous silicon layer provides at least a portion of a first active electrode for an energy storage device disposed in the energy storage device containment feature.

Abstract: An electrolytic treatment system to decontaminate the surface of a radioactively contaminated metallic workpiece has at least two electrodes in close proximity to the surface but not in direct electrical contact. The electrodes are separated from the surface by an electrolyte. Insulation is provided in the electrolyte between the electrodes to avoid or minimize a direct current path between the electrodes though the electrolyte.

Abstract: One or more trenches in a silicon substrate have an electrically active surface at a trench base and metal layer disposed on the electrically active surface. Precursor materials are disposed and/or formed on the metal layer in the trench. An anode is patterned either exclusively in the 3D trench or in the 3D trench, sidewalls and field of the substrate, where the anode patterning transforms and/or moves the precursor materials in the trench into some novel compositions of matter and other final operational structures for the device, e.g. layers of metallic Lithium for energy storage and different concentrations of Lithium-silicon species in the substrate. A multi-faceted mechanism is disclosed for Al2O3 silicon interfacial additives. When the anode is patterned both in and outside the 3D wells, Al2O3 provides an for electron-conductive Li-metal interface that enables homogenous plating on both the insulated substrate field as well as active silicon trench base where Al2O3 acts as a barrier to Li—Si diffusion.

Abstract: One or more trenches in a silicon substrate have an electrically active surface at a trench base and metal layer disposed on the electrically active surface. Precursor materials are disposed and/or formed on the metal layer in the trench. An anode is patterned either exclusively in the 3D trench or in the 3D trench, sidewalls and field of the substrate, where the anode patterning transforms and/or moves the precursor materials in the trench into some novel compositions of matter and other final operational structures for the device, e.g. layers of metallic Lithium for energy storage and different concentrations of Lithium-silicon species in the substrate. A multi-faceted mechanism is disclosed for Al2O3 silicon interfacial additives. When the anode is patterned both in and outside the 3D wells, Al2O3 provides an for electron-conductive Li-metal interface that enables homogenous plating on both the insulated substrate field as well as active silicon trench base where Al2O3 acts as a barrier to Li—Si diffusion.

Abstract: A device such as, for example, an energy storage device or a micro-resistor, is disclosed which includes a silicon based electrode in which decreased interfacial resistance/impedance throughout the charge-mobile region of the device is provided. The decreased interfacial resistance/impedance is provided by forming an interfacial additive composite layer composed of a molten lithium containing salt layer and a layer of a Li-salt containing conductive polymeric adhesive material between the silicon based electrode and a solid polymer electrolyte layer. The presence of such an interfacial additive composite layer increases the ion and electron mobile dependent performances at the silicon based electrode interface due to significant decrease in the resistance/impedance that is observed at the respective interface as well as the impedance observed in the bulk of the device.

Abstract: An acoustic vector sensor and a method of detecting an acoustic vector are described. An object suspended in the fluid medium by a non-contact support structure. The object and the non-contact support structure are configured so that the object moves in response to any disturbance of the fluid by an acoustic wave; The non-contact support structure of the object comprises a plurality of solenoids that each produce a magnetic field in a fluid medium. A measurement measures movement of the object. A processing device determines an acoustic intensity vector of the acoustic wave based on the measured movement of the object.

Abstract: An ophthalmic device includes an optic including an optic axis and a closed-loop haptic structure coupled to the optic via a frame surrounding the optic, the closed-loop haptic structure including a closed loop extending from first and second attachment points to the frame. The closed loop includes a first hinge and a second hinge. The first hinge has a first section having a first component extending in a first angular direction, a second section having a second component extending in a second angular direction opposite to the first angular direction, and a first connecting section between the first section and the second section. The second hinge has a third section having a third component extending in the second angular direction, a fourth section having a fourth component extending in the first angular direction, the fourth section being connected to the second section to form the closed loop.

Abstract: A modular intraocular lens (IOL) with a ring configured to prevent glare artifacts. The ring includes a flange on the posterior rim, in which an anterior surface on the flange has a first profile and a posterior surface of the flange has a second profile non-parallel with the first profile. Non-parallel surfaces of the flange can be configured to defocus light transmitted at off-axis angles through an optic and the flange.

Abstract: An interfacial additive layer for decreasing the interfacial resistance/impedance of a silicon based electrode-containing device such as, for example, an energy storage device or a micro-resistor, is disclosed. The interfacial additive, which is composed of evaporated lithium fluoride, is formed between a silicon based electrode and a solid polymer electrolyte layer of the device. The evaporated lithium fluoride serves as ion conductive layer. The presence of such an interfacial additive layer increases the ion and electron mobile dependent performances at the silicon based electrode interface due to significant decrease in the resistance/impedance that is observed at the respective interface as well as the impedance observed in the bulk of the device.

Abstract: A semiconductor device structure and method for forming the same is disclosed. The structure incudes a silicon substrate having at least one trench disposed therein. An electrical and ionic insulating layer is disposed over at least a top surface of the substrate. A plurality of energy storage device layers is formed within the one trench. The plurality of layers includes at least a cathode-based active electrode having a thickness of, for example, at least 100 nm and an internal resistance of, for example, less than 50 Ohms/cm2. The method includes forming at least one trench in a silicon substrate. An electrical and ionic insulating layer(s) is formed and disposed over at least a top surface of the silicon substrate. A plurality of energy storage device layers is formed within the trench. Each layer of the plurality of energy storage device layers is independently processed and integrated into the trench.

Abstract: An ophthalmic device includes an optic including an optic axis and an open-loop haptic structure coupled with the optic. The open-loop haptic structure includes a pair of open loops, the pair of open loops comprising a first open loop and a second open loop. At least a portion of the first open loop extends in a first angular direction. At least a portion of the second open loop extends in a second angular direction, the second angular direction being opposite the first angular direction.

Abstract: An ophthalmic device includes an optic including an optic axis and a closed-loop haptic structure coupled to the optic via a frame surrounding the optic, the closed-loop haptic structure including a closed loop extending from first and second attachment points to the frame. The closed loop includes a first hinge and a second hinge. The first hinge has a first section having a first component extending in a first angular direction, a second section having a second component extending in a second angular direction opposite to the first angular direction, and a first connecting section between the first section and the second section. The second hinge has a third section having a third component extending in the second angular direction, a fourth section having a fourth component extending in the first angular direction, the fourth section being connected to the second section to form the closed loop.

Abstract: An energy storage device is provided that includes a pre-lithiated silicon based anode and a carbon nanotube based cathode. The pre-lithiated silicon anode has a porous region and a non-porous region. The full cell energy storage device has high electrochemical performance which exhibits greater 200 rechargeable cycles with less than 25% after 10 charge discharge cycles relative to the first discharge cycle, a maximum specific discharge capacity greater than 300 mAh/g and a specific capacity of greater than 100 mAh/g for over 130 cycles. Such an energy storage device is scalable for a wide array of applications due to its wafer level processing and silicon-based substrate integrability.

Abstract: A semiconductor device structure and method for forming the same is disclosed. The structure incudes a silicon substrate having at least one trench disposed therein. An electrical and ionic insulating layer is disposed over at least a top surface of the substrate. A plurality of energy storage device layers is formed within the one trench. The plurality of layers includes at least a cathode-based active electrode having a thickness of, for example, at least 100 nm and an internal resistance of, for example, less than 50 Ohms/cm2. The method includes forming at least one trench in a silicon substrate. An electrical and ionic insulating layer(s) is formed and disposed over at least a top surface of the silicon substrate. A plurality of energy storage device layers is formed within the trench. Each layer of the plurality of energy storage device layers is independently processed and integrated into the trench.

Abstract: A three dimensional (3D) In-Silicon energy storage device is provided by a method that includes forming a thick dielectric material layer on a surface of a silicon based substrate. A 3D trench is then formed into the dielectric material layer and the silicon based substrate, and thereafter a dielectric material spacer is formed, in addition to the dielectric remaining on the field of the substrate, as well as along a sidewall of the 3D trench, and on a first portion of a sub-surface of the silicon based substrate that is present at a bottom of the 3D trench. A second portion of the sub-surface of the silicon based substrate that is present in the 3D trench remains physically exposed. Active energy storage device materials can then be formed laterally adjacent to the dielectric material spacer that is within the 3D trench and on the dielectric material layer.

Abstract: A battery includes a cathode with a metal halide and an electrically conductive material, wherein the metal halide acts as an active cathode material; a porous silicon anode with a surface having pores with a depth of about 0.5 microns to about 500 microns, and a metal on the surface and in at least some of the pores thereof; and an electrolyte contacting the anode and the cathode, wherein the electrolyte includes a nitrile moiety.

Abstract: An energy storage device has all components, e.g. anode, electrolyte, and cathode contained and sealed with a trench in a substrate. Various methods and structures are disclosed for sealing the components. In some embodiments, a sealer or sealing layer seals the components. One embodiment uses a tension clamp to contain the components with additional pressure. Another embodiment uses a cathode structure cup which is held in place in the substrate via sidewall trench features. Different external connections to the device are disclosed. The invention enables full three-dimensional components to be created and contained entirely within the substrate during assembly, curing, galvanic cycling and other manufacturing processes and provides improved sealing of the components during device operation.