Abstract: Described herein are examples of evaluating electromagnetic energy reflection data of security scans. In embodiments, a method to evaluate electromagnetic energy reflection data determines whether electronic information of a security scan contains an anomaly, and identifies an anomaly location in the electronic information corresponding to the anomaly. The method determines a subset of the electronic information corresponding to the anomaly location, determines anomaly attributes using the subset of the electronic information, and evaluates the anomaly attributes using a database of reference items by comparing anomaly attributes to respective reference characteristics of reference items or identity information. When a comparison meets the respective match criterion for the given reference item, the method assigns to the anomaly the respective identifier as an anomaly identifier.

Abstract: An orthopaedic driver handle including a drivetrain having a driving end and a driven end opposite the driving end and defining a longitudinal axis, and a separable housing covering at least a portion of the drivetrain. The separable housing includes a first portion and a second portion separably connected to the first portion such that sliding the first portion relative to the second portion in a direction of the longitudinal axis unlocks the first portion from the second portion.

Abstract: An orthopedic driver includes a drivetrain having a driven end and a second end opposite the driven end, the drivetrain defining a first axis; an instrument connector rotatably coupled to the second end of the drivetrain and defining a second axis angled relative to the first axis; an angling bushing associated with the instrument connector; and a housing having a straight portion covering at least a portion of the drivetrain and an angled portion connected to the straight portion, the angled portion interacting with the angling bushing to hold the instrument connector angled relative to the drivetrain.

Abstract: Technologies are described for vent extension systems. The systems may comprise a first extension attached to an intake vent, a second extension attached to an exhaust vent, and a third extension attached to an alternator vent of a generator housing. The first and second extensions may include a first upper section including a first and second end and a bend; and a first lower section including a first and second end and a bend. The first end of the first lower section may be configured to connect to the second end of the first upper section. The third extension may include a second upper section including a first and second end and a bend; and a second lower section including a first and second end and a bend. The first end of the second lower section may be configured to connect to the second end of the second upper section.

Abstract: Technologies are described for vent extension systems. The systems may comprise a first extension attached to an intake vent, a second extension attached to an exhaust vent, and a third extension attached to an alternator vent of a generator housing. The first and second extensions may include a first upper section including a first and second end and a bend; and a first lower section including a first and second end and a bend. The first end of the first lower section may be configured to connect to the second end of the first upper section. The third extension may include a second upper section including a first and second end and a bend; and a second lower section including a first and second end and a bend. The first end of the second lower section may be configured to connect to the second end of the second upper section.

Abstract: An orthopaedic driver handle including a drivetrain having a driving end and a driven end opposite the driving end and defining a longitudinal axis, and a separable housing covering at least a portion of the drivetrain. The separable housing includes a first portion and a second portion separably connected to the first portion such that sliding the first portion relative to the second portion in a direction of the longitudinal axis unlocks the first portion from the second portion.

Abstract: An orthopaedic driver includes a drivetrain having a driven end and a second end opposite the driven end, the drivetrain defining a first axis; an instrument connector rotatably coupled to the second end of the drivetrain and defining a second axis angled relative to the first axis; an angling bushing associated with the instrument connector; and a housing having a straight portion covering at least a portion of the drivetrain and an angled portion connected to the straight portion, the angled portion interacting with the angling bushing to hold the instrument connector angled relative to the drivetrain.

Abstract: A surgical instrument case which includes a primary case which is substantially rectangular and has a pair of opposite side walls, a pair of opposite end walls and a bottom wall. A secondary case fits within the primary case, and the secondary case has at least one attachment element on an outside surface of the secondary case. The at least one attachment element is configured for connecting to at least one of the side walls and the end walls when the secondary case is mounted on an outside of at least one of the opposite side walls and the opposite end walls.

Abstract: A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-SiGe, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.

Abstract: A method of selectively enhancing the sensitivity of a metal oxide sensor includes fabricating a ZnO sensor having a ZnO sensor element therein; and exposing the ZnO sensor element to a plasma stream.

Abstract: A ZnO film with a C-axis preference is provided with a corresponding fabrication method. The method includes: forming a substrate; forming an amorphous Al2O3 film overlying the substrate; and, forming a ZnO film overlying the Al2O3 film at a substrate temperature of about 170° C., having a C-axis preference responsive to the adjacent Al2O3 film. The substrate can be a material such as Silicon (Si) (100), Si (111), Si (110), quartz, glass, plastic, or zirconia. The Al2O3 film can be deposited using a chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering process. Typically, the Al2O3 layer has a thickness in the range of about 3 to 15 nanometers (nm). The step of forming the ZnO film having a C-axis preference typically means that the ZnO film has a (002) peak at least 5 times greater than the (100) peak, as measured by X-ray diffraction (XRD).

Abstract: A ZnO asperity-covered carbon nanotube (CNT) device has been provided, along with a corresponding fabrication method. The method comprises: forming a substrate; growing CNTs from the substrate; conformally coating the CNTs with ZnO; annealing the ZnO-coated CNTs; and, forming ZnO asperities on the surface of the CNTs in response to the annealing. In one aspect, the ZnO asperities have a density in the range of about 100 to 1000 ZnO asperities per CNT. The density is dependent upon the deposited ZnO film thickness and annealing parameters. The CNTs are conformally coating with ZnO using a sputtering, chemical vapor deposition (CVD), spin-on, or atomic layer deposition (ALD). For example, an ALD process can be to deposit a layer of ZnO over the CNTs having a thickness in the range of 1.2 to 200 nanometers (nm).

Abstract: Programming of the input and output paper handling setup of a high speed reprographic system can adversely affect the throughput of the system. A method or system includes a control system that examines the proposed setup and then determine if any of these options results in a loss of throughput. If such losses are detected and exceed a predetermined threshold, the operator of the device will be informed and given the opportunity to change the setup to reduce the throughput loss.

Abstract: A method of fabricating a nanowire sensor device structure includes preparing a substrate, having a silicon base layer, a buried oxide layer in the silicon base layer, a top silicon layer on the buried oxide layer, and a doped well in the silicon base layer; forming a silicon island from the top silicon layer; etching the buried oxide layer to undercut the silicon island in some instances; depositing a seed layer of polycrystalline ZnO over the silicon island, the buried oxide layer, the doped well and the silicon base layer; selectively removing the polycrystalline ZnO from the silicon island; growing and structuring ZnO nanostructures on the seed layer of ZnO; treating the ZnO nanostructures to sensitize the ZnO nanostructures to a desired application; depositing a layer of insulating material; patterning and etching the insulating material; and metallizing the nanowire device structure.

Abstract: A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H2O at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.

Abstract: A method of fabricating a nanowire CHEMFET sensor mechanism includes preparing a silicon substrate; depositing a polycrystalline ZnO seed layer on the silicon substrate; patterning and etching the polycrystalline ZnO seed layer; depositing an insulating layer over the polycrystalline ZnO seed layer and the silicon substrate; patterning and etching the insulating layer to form contact holes to a source region and a drain region; metallizing the contact holes to form contacts for the source region and the drain region; depositing a passivation dielectric layer over the insulating layer and the contacts; patterning the passivation layer and etching to expose the polycrystalline ZnO seed layer between the source region and the drain region; and growing ZnO nanostructures on the exposed ZnO seed layer to form a ZnO nanostructure CHEMFET sensor device.

Abstract: A surgical instrument case which includes a primary case which is substantially rectangular and has a pair of opposite side walls, a pair of opposite end walls and a bottom wall. A secondary case fits within the primary case, and the secondary case has at least one attachment element on an outside surface of the secondary case. The at least one attachment element is configured for connecting to at least one of the side walls and the end walls when the secondary case is mounted on an outside of at least one of the opposite side walls and the opposite end walls.

Abstract: A device and a fabrication method are provided for an EL device with a nanotip-contoured phosphor layer. The method comprises: forming a bottom electrode with nanotips; forming a phosphor layer overlying the bottom electrode, having irregularly-shaped top and bottom surfaces; and, forming a top electrode overlying the phosphor layer. The bottom electrode top surface has a nanotip contour, and the phosphor layer irregularly-shaped top and bottom surfaces have contours approximately matching the bottom electrode top surface nanotip contour. In one aspect, a contoured bottom dielectric is interposed between the bottom electrode and the phosphor layer, having top and bottoms surfaces with contours approximately matching the nanotip contour. Likewise, a top dielectric may be interposed between the top electrode and the phosphor layer, having a bottom surface with a contour approximately matching the contour of phosphor layer top surface.

Abstract: A device and a fabrication method are provided for a ZnO nanotip electroluminescence (EL) device on a silicon (Si) substrate. The method includes: forming a Si substrate; forming a bottom contact overlying the Si substrate; forming a seed layer overlying the bottom contact; forming ZnO nanotips with tops, overlying the seed layer; forming an insulating film overlying the ZnO nanotips; etching the insulating film; exposing the ZnO nanotip tops; and, forming a transparent top electrode overlying the exposed ZnO nanotip tops. In one aspect, after forming the ZnO nanotips, an ALD process can be used to coat the ZnO nanotips with a material such as Al2O3 or HfO2. The seed layer can be ZnO or ZnO:Al, formed using a deposition process such as sputtering, chemical vapor deposition (CVD), spin-on, or atomic layer deposition (ALD).

Abstract: Patterned zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. The seed layer is patterned, such as by etching, and growth of at least one zinc-oxide nanostructure is induced substantially over the patterned seed layer by, for example, exposing the patterned seed layer to zinc vapor in the presence of a trace amount of oxygen. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of a zinc thin film layer formed on the substrate.