Abstract: Zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. Growth of at least one zinc-oxide nanostructure is induced on the seed layer. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of the seed layer.

Abstract: Zinc-oxide nanostructures are formed by forming a pattern on a surface of a substrate. A catalyst metal, such as nickel, is formed on the surface of the substrate. Growth of at least one zinc oxide nanostructure is induced on the catalyst metal substantially over the pattern on the surface of the substrate based on a vapor-liquid-solid technique. In one exemplary embodiment, inducing the growth of at least one zinc-oxide nanostructure induces growth of each zinc-oxide nanostructure substantially over a patterned polysilicon layer. In another exemplary embodiment, when growth of at least one zinc-oxide nanostructure is induced, each zinc-oxide nanostructure grows substantially over an etched silicon substrate layer.

Abstract: A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array.

Abstract: A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an electroluminescent layer overlying the p+/n+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II-VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.

Abstract: Methods of forming microlens structure are provided. A hard mask is formed overlying a transparent material. An opening is patterned into the hard mask. Both the patterned hard mask and the underlying transparent material are exposed to a wet etch that etches the hard mask and the transparent material. As the hard mask is etched the opening increases exposing more of the transparent material. Depending on the etch selectivity, a lens shape is formed with sloped sidewalls. The lens opening may be filled with lens material to form a lens.

Abstract: A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material overlying the surface of the substrate; depositing and patterning a photoresist layer overlying the transparent material to form openings to expose the transparent material; introducing a first isotropic etchant into the openings and etching the transparent material where exposed to form initial lens shapes having a radius; stripping the photoresist; exposing the transparent material to a second isotropic etchant to increase the radius of the lens shapes; and depositing a lens material overlying the transparent material, whereby the lens shapes are at least partially filled with lens material.

Abstract: The present invention discloses a non-volatile memory cell structure utilizing a charge trapping high-k dielectric in the place of the triple film stack (tunnel dielectric layer/charge trapping layer/blocking layer). The charge trapping characteristic of the high-k dielectric can be further improved by exposing the high-k dielectric layer to an treatment process such as a plasma exposure using excited state oxygen (e.g. oxygen plasma) ambient. By using a single layer as the charge trapping gate dielectric, the present invention presents a simple and inexpensive solution that permits device scaling to very small dimensions, together with the ease of device fabrication processes. The present invention also discloses the fabrication process for the charge trapping high-k gate dielectric non-volatile memory cell structure, applicable to bulk device, TFT device or SOI device.

Abstract: An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide/aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.

Abstract: Methods of forming an interfacial layer on a hydrogen-passivated substrate are provided. These methods utilize atomic layer deposition techniques incorporating metal nitrate-based precursors, such as hafnium nitrate or zirconium nitrate, without introducing a hydrating agent, or oxidizing agent, such as water, during the formation of the interfacial layer. Also provided are methods of forming high-k films, by first forming an interfacial layer on the surface of a hydrogen-passivated substrate, and then depositing one, or more, high-k dielectric films.

Abstract: An arm rest bracket for pivotal connection of an arm rest to a vehicle seat frame. The bracket includes a plastic insert frictionally engaging the arm rest connecting rod and locking pin for reducing vibration noise while the vehicle is moving. The insert includes a camming surface to assist in connecting the arm rest to the bracket. The insert further includes abutments for guiding the stop pin to provide easy removal of the arm rest from the bracket.