Patents by Inventor John D. Porter

John D. Porter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12372575
    Abstract: A memory controller and a physical interface layer may accommodate multiple memory types. In some examples, the memory controller and/or PHY may include a register that includes operating parameters for multiple operating modes. Different operating modes may be compatible with different memory types. In some examples, the memory controller and physical interface may be included in a system for testing multiple memory types. The system may provide multiple interfaces for communicating with the memory. The different communication types may be used for performing different tests and/or simulating different types of devices that may utilize the memory.
    Type: Grant
    Filed: July 15, 2024
    Date of Patent: July 29, 2025
    Assignee: Micron Technology, Inc.
    Inventors: Kenneth M. Curewitz, Jaime Cummins, John D. Porter, Bryce D. Cook, Jeffrey P. Wright
  • Publication number: 20250140305
    Abstract: Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.
    Type: Application
    Filed: December 30, 2024
    Publication date: May 1, 2025
    Inventors: Dean D. Gans, John D. Porter
  • Publication number: 20250087254
    Abstract: Systems and method for sensing an accessed voltage value associated with a memory cell is described. In different embodiments, a memory array may include a different number of sense components. Moreover, each sense component may receive latching signals to latch the accessed voltage value of memory cells of the memory array based on different timings. For example, the memory array may latch digit line voltages of memory cells positioned farther from a respective word line driver at a later time based on a latching signal with a higher delay. Such memory arrays may include circuitry to receive and/or generate the delayed latching signals as well as selection circuitry for latching the digit line voltages based on a selected delayed latching signals.
    Type: Application
    Filed: November 25, 2024
    Publication date: March 13, 2025
    Inventors: Si Hong Kim, John D. Porter
  • Patent number: 12222803
    Abstract: An on-die controller can provide an error correction capability for data stored in an array of memory cells located on the same die as the on-die controller. The error correction capability provided by the on-die controller eliminates a need to transfer error correction code (ECC) data to an external controller that may have provided the error correction capability in lieu of the on-die controller, which can provide more channel bandwidth for other types of non-user data for further strengthening data reliability, security, integrity of the memory system.
    Type: Grant
    Filed: June 29, 2023
    Date of Patent: February 11, 2025
    Assignee: Micron Technology, Inc.
    Inventors: Marco Sforzin, John D. Porter
  • Patent number: 12223998
    Abstract: Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.
    Type: Grant
    Filed: March 15, 2024
    Date of Patent: February 11, 2025
    Inventors: Dean D. Gans, John D. Porter
  • Patent number: 12183420
    Abstract: Systems and method for sensing an accessed voltage value associated with a memory cell is described. In different embodiments, a memory array may include a different number of sense components. Moreover, each sense component may receive latching signals to latch the accessed voltage value of memory cells of the memory array based on different timings. For example, the memory array may latch digit line voltages of memory cells positioned farther from a respective word line driver at a later time based on a latching signal with a higher delay. Such memory arrays may include circuitry to receive and/or generate the delayed latching signals as well as selection circuitry for latching the digit line voltages based on a selected delayed latching signals.
    Type: Grant
    Filed: August 31, 2022
    Date of Patent: December 31, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Si Hong Kim, John D. Porter
  • Publication number: 20240395303
    Abstract: Systems and method for sensing an accessed voltage value associated with a memory cell is described. In different embodiments, a memory array may include a different number of sense amplifiers. Moreover, each sense amplifier may include capacitors with different capacitance values to compensate for a difference in received charges associated with a similar memory state caused by various circuit delays. For example, farther memory cells from a word line driver may receive activation signals with higher delays which in turn may result in delayed activation. As such, the sense amplifiers may include capacitors with varying capacitance values to compensate for an amount charge received at a latching time caused by delayed provision of charges associated with the targeted memory states.
    Type: Application
    Filed: August 5, 2024
    Publication date: November 28, 2024
    Inventors: Si Hong Kim, John D. Porter
  • Publication number: 20240369632
    Abstract: A memory controller and a physical interface layer may accommodate multiple memory types. In some examples, the memory controller and/or PHY may include a register that includes operating parameters for multiple operating modes. Different operating modes may be compatible with different memory types. In some examples, the memory controller and physical interface may be included in a system for testing multiple memory types. The system may provide multiple interfaces for communicating with the memory. The different communication types may be used for performing different tests and/or simulating different types of devices that may utilize the memory.
    Type: Application
    Filed: July 15, 2024
    Publication date: November 7, 2024
    Applicant: Micron Technology, Inc.
    Inventors: Kenneth M. Curewitz, Jaime Cummins, John D. Porter, Bryce D. Cook, Jeffrey P. Wright
  • Patent number: 12080330
    Abstract: Systems and method for sensing an accessed voltage value associated with a memory cell is described. In different embodiments, a memory array may include a different number of sense amplifiers. Moreover, each sense amplifier may include capacitors with different capacitance values to compensate for a difference in received charges associated with a similar memory state caused by various circuit delays. For example, farther memory cells from a word line driver may receive activation signals with higher delays which in turn may result in delayed activation. As such, the sense amplifiers may include capacitors with varying capacitance values to compensate for an amount charge received at a latching time caused by delayed provision of charges associated with the targeted memory states.
    Type: Grant
    Filed: August 31, 2022
    Date of Patent: September 3, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Si Hong Kim, John D. Porter
  • Patent number: 12072381
    Abstract: A memory controller and a physical interface layer may accommodate multiple memory types. In some examples, the memory controller and/or PHY may include a register that includes operating parameters for multiple operating modes. Different operating modes may be compatible with different memory types. In some examples, the memory controller and physical interface may be included in a system for testing multiple memory types. The system may provide multiple interfaces for communicating with the memory. The different communication types may be used for performing different tests and/or simulating different types of devices that may utilize the memory.
    Type: Grant
    Filed: October 18, 2022
    Date of Patent: August 27, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Kenneth M. Curewitz, Jaime Cummins, John D. Porter, Bryce D. Cook, Jeffrey P. Wright
  • Publication number: 20240221818
    Abstract: Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Inventors: Dean D. Gans, John D. Porter
  • Publication number: 20240125851
    Abstract: A memory controller and a physical interface layer may accommodate multiple memory types. In some examples, the memory controller and/or PHY may include a register that includes operating parameters for multiple operating modes. Different operating modes may be compatible with different memory types. In some examples, the memory controller and physical interface may be included in a system for testing multiple memory types. The system may provide multiple interfaces for communicating with the memory. The different communication types may be used for performing different tests and/or simulating different types of devices that may utilize the memory.
    Type: Application
    Filed: October 18, 2022
    Publication date: April 18, 2024
    Applicant: Micron Technology, Inc.
    Inventors: Kenneth M. Curewitz, Jaime Cummins, John D. Porter, Bryce D. Cook, Jeffrey P. Wright
  • Patent number: 11955162
    Abstract: Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.
    Type: Grant
    Filed: May 5, 2023
    Date of Patent: April 9, 2024
    Inventors: Dean D. Gans, John D. Porter
  • Publication number: 20240071431
    Abstract: Systems and method for sensing an accessed voltage value associated with a memory cell is described. In different embodiments, a memory array may include a different number of sense components. Moreover, each sense component may receive latching signals to latch the accessed voltage value of memory cells of the memory array based on different timings. For example, the memory array may latch digit line voltages of memory cells positioned farther from a respective word line driver at a later time based on a latching signal with a higher delay. Such memory arrays may include circuitry to receive and/or generate the delayed latching signals as well as selection circuitry for latching the digit line voltages based on a selected delayed latching signals.
    Type: Application
    Filed: August 31, 2022
    Publication date: February 29, 2024
    Inventors: Si Hong Kim, John D. Porter
  • Publication number: 20240071456
    Abstract: Systems and method for sensing an accessed voltage value associated with a memory cell is described. In different embodiments, a memory array may include a different number of sense amplifiers. Moreover, each sense amplifier may include capacitors with different capacitance values to compensate for a difference in received charges associated with a similar memory state caused by various circuit delays. For example, farther memory cells from a word line driver may receive activation signals with higher delays which in turn may result in delayed activation. As such, the sense amplifiers may include capacitors with varying capacitance values to compensate for an amount charge received at a latching time caused by delayed provision of charges associated with the targeted memory states.
    Type: Application
    Filed: August 31, 2022
    Publication date: February 29, 2024
    Inventors: Si Hong Kim, John D. Porter
  • Publication number: 20240004751
    Abstract: An on-die controller can provide an error correction capability for data stored in an array of memory cells located on the same die as the on-die controller. The error correction capability provided by the on-die controller eliminates a need to transfer error correction code (ECC) data to an external controller that may have provided the error correction capability in lieu of the on-die controller, which can provide more channel bandwidth for other types of non-user data for further strengthening data reliability, security, integrity of the memory system.
    Type: Application
    Filed: June 29, 2023
    Publication date: January 4, 2024
    Inventors: Marco Sforzin, John D. Porter
  • Publication number: 20230420032
    Abstract: Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.
    Type: Application
    Filed: May 5, 2023
    Publication date: December 28, 2023
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Dean D. Gans, John D. Porter
  • Patent number: 11804281
    Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for automatic soft post-package repair (ASPPR). A memory may receive a row address along with a signal indicating an ASPPR operation, such as a bad page flag being set. A word line engine generates a physical address based on the row address, and ASPPR registers stores the physical address. The time it takes from receiving the row address to storing the physical address may be within the timing of an access operation on the memory such as tRAS. The row address may specify a single page of information. If the bad page flag is set, then a subsequent PPR operation may blow fuses to encode the physical address stored in the ASPPR registers.
    Type: Grant
    Filed: October 12, 2021
    Date of Patent: October 31, 2023
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Donald M. Morgan, Alan J. Wilson, Bryan D. Kerstetter, John D. Porter
  • Patent number: 11682447
    Abstract: Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: June 20, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Dean D. Gans, John D. Porter
  • Patent number: 11646065
    Abstract: An apparatus has a controller and an array of memory cells, including a first section comprising a plurality of rows and a second section comprising a plurality of rows. The controller configured to, in association with wear leveling, transfer data stored in a first row of the first section from the first row to a register, transfer the data from the register to a destination row of the second section while data in a second row of the first section is being sensed.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: May 9, 2023
    Assignee: Micron Technology, Inc.
    Inventor: John D. Porter