Abstract: Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.

Abstract: An apparatus has a controller and an array of memory cells, including a first section comprising a plurality of rows and a second section comprising a plurality of rows. The controller configured to, in association with wear leveling, transfer data stored in a first row of the first section from the first row to a register, transfer the data from the register to a destination row of the second section while data in a second row of the first section is being sensed.

Abstract: Disclosed herein is an apparatus that includes a memory cell array including a plurality of memory cells, a first counter circuit configured to periodically update a count value during a first operation mode, a burst clock generator configured to successively generate a burst pulse predetermined times When the count value indicates a predetermined value, and a row address control circuit configured to perform a refresh operation on the memory cell array in response to the burst pulse.

Abstract: Methods, systems, and devices for temperature-based access timing for a memory device are described. In some memory devices, accessing memory cells may be associated with different operations that are variously dependent on a temperature of the memory device. For example, some operations associated with accessing a memory cell may have a longer duration and others a shorter duration depending on the temperature of the memory device. In accordance with examples as disclosed herein, a memory device may be configured for performing some portions of an access operation according to a duration that is proportional to a temperature of the memory device, and performing other portions of the access operation according to a duration that is inversely proportional to a temperature of the memory device.

Abstract: Disclosed herein is an apparatus that includes a memory cell array including a plurality of memory cells, a first counter circuit configured to periodically update a count value during a first operation mode, a burst clock generator configured to successively generate a burst pulse predetermined times when the count value indicates a predetermined value, and a row address control circuit configured to perform a refresh operation on the memory cell array in response to the burst pulse.

Abstract: Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.

Abstract: An apparatus has a controller and an array of memory cells, including a first section comprising a plurality of rows and a second section comprising a plurality of rows. The controller configured to, in association with wear leveling, transfer data stored in a first row of the first section from the first row to a register, transfer the data from the register to a destination row of the second section while data in a second row of the first section is being sensed.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for plate coupled sense amplifiers. An example embodiment may include a sense amplifier which may sense a voltage from a memory cell. The sense amplifier may also monitor a change in the voltage, and determine a logical value of the memory cell based on the time when the voltage reaches a trigger voltage. The memory cell may be coupled to a plate with a plate voltage, wherein a change in the plate voltage determines the change of the voltage from the memory cell.

Abstract: An apparatus has a controller and an array of memory cells, including a first section comprising a plurality of rows and a second section comprising a plurality of rows. The controller configured to, in association with wear leveling, transfer data stored in a first row of the first section from the first row to a register, transfer the data from the register to a destination row of the second section while data in a second row of the first section is being sensed.

Abstract: Disclosed herein is an apparatus that includes a memory cell array including a plurality of memory cells, a first counter circuit configured to periodically update a count value during a first operation mode, a burst clock generator configured to successively generate a burst pulse predetermined times when the count value indicates a predetermined value, and a row address control circuit configured to perform a refresh operation on the memory cell array in response to the burst pulse.

Abstract: Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for plate coupled sense amplifiers. An example embodiment may include a sense amplifier which may sense a voltage from a memory cell. The sense amplifier may also monitor a change in the voltage, and determine a logical value of the memory cell based on the time when the voltage reaches a trigger voltage. The memory cell may be coupled to a plate with a plate voltage, wherein a change in the plate voltage determines the change of the voltage from the memory cell.

Abstract: An apparatus has a controller and an array of memory cells, including a first section comprising a plurality of rows and a second section comprising a plurality of rows. The controller configured to, in association with wear leveling, transfer data stored in a first row of the first section from the first row to a register, transfer the data from the register to a destination row of the second section while data in a second row of the first section is being sensed.

Abstract: Devices and methods for sensing a memory cell are described. The memory cell may include a ferroelectric memory cell. During a read operation, a first switching component may selectively couple a sense component with the memory cell based on a logic state stored on the memory cell to transfer a charge between the memory cell and the sense component. A second switching component, which may be coupled with the first switching component, may down convert a voltage associated with the charge to another voltage that is within an operation voltage of the sense component. The sense component may operate at a lower voltage than a voltage at which the memory cell operates to reduce power consumption in some cases.

Abstract: Apparatuses and methods for configurable command and data input circuits for semiconductor memories are described. Example apparatuses include input signal blocks, clock blocking circuits, data input blocks, driver circuits, and data receiver circuits.

Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. An example method includes receiving a data clock signal responsive to receiving a timing command, performing an access operation responsive to receiving an access command associated with the timing command, providing an access data clock signal based on the data clock signal, and providing an access data clock signal based on the data clock signal. The access command may be separated in time from the associated timing command by at least one clock cycle of a system clock signal. In some examples, the access command may precede the associated timing command or may follow the associated timing command. In some examples, the access command may immediately follow or precede the associated timing command.

Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. An example method includes receiving a data clock signal responsive to receiving a timing command, performing, an access operation responsive to receiving an access command associated with the timing command, providing an access data clock signal based on the data clock signal, and providing an access data clock signal based on the data clock signal. The access command may be separated in time from the associated timing command by at least one clock cycle of a system clock signal. In some examples, the access command may precede the associated timing command or may follow the associated timing command. In some examples, the access command may immediately follow or precede the associated timing command.

Abstract: Apparatuses and methods for duty cycle distortion correction of clocks are disclosed. An example apparatus includes a clock circuit configured to receive complementary input clocks and a control signal and to provide multiphase clocks responsive to complementary input clocks. The clock circuit is further configured to be in a first mode or second mode controlled by the control signal and configured to provide the multiphase clocks having greater duty cycle distortion in a first mode than in a second mode.

Abstract: Apparatuses and methods for duty cycle distortion correction of clocks are disclosed. An example apparatus includes a clock circuit configured to receive complementary input clocks and a control signal and to provide multiphase clocks responsive to complementary input clocks. The clock circuit is further configured to be in a first mode or second mode controlled by the control signal and configured to provide the multiphase clocks having greater duty cycle distortion in a first mode than in a second mode.

Abstract: An analog circuit including a pair of input nodes and a pair of output nodes is coupled to a mismatch reduction circuit including an input node, an output node, a phase controller that times even and odd phases, an input switch, and an output switch. The input switch electrically connects the mismatch reduction circuit input node to a first node of the pair of analog circuit input nodes during each even phase and to electrically connects the mismatch reduction circuit input node to a second node of the pair of analog circuit input nodes during each odd phase. The output switch electrically connects a first node of the pair of analog circuit output nodes to the mismatch reduction circuit output node during each even phase and electrically connects a second node of the pair of analog circuit output nodes to the mismatch reduction circuit output node during each odd phase.