Abstract: Structures and methods of operating a resistive switching memory device are disclosed herein. In one embodiment, a resistive switching memory device can include: (i) a plurality of resistive memory cells, where each of the resistive switching memory cells is configured to be programmed to a low resistance state by application of a first voltage in a forward bias direction, and to be erased to a high resistance state by application of a second voltage in a reverse bias direction; and (ii) a sensing circuit coupled to at least one of the plurality of resistive memory cells, where the sensing circuit is configured to read a data state of the at least one resistive memory cell by application of a third voltage in the forward bias direction or the bias reverse direction.

Abstract: Structures and operations of a resistive switching memory device are described herein. In one embodiment, a resistive switching memory device can include: a plurality of resistive memory cells, each configured to be programmed to a low resistance state by application of a first voltage in a forward bias direction, and erased to a high resistance state by application of a second voltage in a reverse bias direction; a plurality of common plates, each being connected to a subset of the resistive memory cells; a command detector configured to detect a write command to be executed as a first and second write operations; and a write controller configured to perform the first write operation on each resistive memory cell in a selected subset, and to perform the second write operation on at least one of the resistive memory cells in the selected subset based on the detected write command.

Abstract: A system and method for using a wireless browser to send local information from a wireless handset to a Web server. A service request received from a handset user includes the type of local information needed to carry out the request as well as the URL address of the server. The handset confirms that the input is not a telephone number to be dialed. If the input is a telephone number, the browser is terminated and the number is dialed. Otherwise, the browser acquires the local information needed to carry out the request from the handset. The local information is appended to the URL address, which is extracted from the user input, and the browser is instructed to navigate to the URL address to provide the local information to the server.

Abstract: In one embodiment, a method of operating a resistive switching device includes applying a signal comprising a pulse on a first terminal of a two terminal resistive switching device having the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.

Abstract: A system and method for using a wireless browser to send local information from a wireless handset to a Web server. A service request received from a handset user includes the type of local information needed to carry out the request as well as the URL address of the server. The handset confirms that the input is not a telephone number to be dialed. If the input is a telephone number, the browser is terminated and the number is dialed. Otherwise, the browser acquires the local information needed to carry out the request from the handset. The local information is appended to the URL address, which is extracted from the user input, and the browser is instructed to navigate to the URL address to provide the local information to the server.

Abstract: In one embodiment, a method of operating a resistive switching device includes applying a signal comprising a pulse on a first terminal of a two terminal resistive switching device having the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.

Abstract: An integrated circuit may can include a memory section that stores data in programmable impedance elements arranged at cross points of select lines and sub bit lines, groups of sub bit lines each being connected to a different main bit line, the elements being formed above a substrate surface.

Abstract: Structures and methods for control of an operating window of a programmable impedance element are disclosed herein. In one embodiment, a semiconductor memory device can include: (i) a memory array having a programmable impedance element; (ii) a register configured to be programmed with data that represents an erase verify value, a program verify value, and a read trip point resistance value, for the memory array; (iii) a controller configured to determine a mode of operation for the memory array; (iv) a register access circuit configured to read the register to obtain data that corresponds to the mode of operation; and (v) a voltage generator configured to generate a reference voltage based on the register data, where the reference voltage is used to perform an operation on the programmable impedance element corresponding to the mode of operation.

Abstract: A system and method for using a wireless browser to send local information from a wireless handset to a Web server. A service request received from a handset user includes the type of local information needed to carry out the request as well as the URL address of the server. The handset confirms that the input is not a telephone number to be dialed. If the input is a telephone number, the browser is terminated and the number is dialed. Otherwise, the browser acquires the local information needed to carry out the request from the handset. The local information is appended to the URL address, which is extracted from the user input, and the browser is instructed to navigate to the URL address to provide the local information to the server.

Abstract: Structures and methods for recovering data in a semiconductor memory device are disclosed herein. In one embodiment, a method of recovering data in a semiconductor memory device, can include: (i) pre-conditioning a first memory cell on the semiconductor memory device by using a formation voltage to program a first data state in the first memory cell; (ii) storing a second data state in a second memory cell on the semiconductor memory device by maintaining the second memory cell in a virgin state; (iii) mounting the semiconductor memory device on a printed-circuit board (PCB) by using a high temperature process that increases a resistance of the first memory cell; and (iv) performing a recovery of the first data state by reducing the resistance of the first memory cell.

Abstract: A system and method for using a wireless browser to send local information from a wireless handset to a Web server. A service request received from a handset user includes the type of local information needed to carry out the request as well as the URL address of the server. The handset confirms that the input is not a telephone number to be dialed. If the input is a telephone number, the browser is terminated and the number is dialed. Otherwise, the browser acquires the local information needed to carry out the request from the handset. The local information is appended to the URL address, which is extracted from the user input, and the browser is instructed to navigate to the URL address to provide the local information to the server.

Abstract: An integrated circuit device can include a plurality of memory cells, each including at least one element programmable between different impedance states by application of a voltage or current; a plurality of bit line groups, each bit line group including multiple bit lines, each bit line being coupled to multiple memory cells; a plurality of current source circuits coupled to the bit line groups, each current source circuit configured to couple the bit lines of its respective group to at least a first bias node or a second bias node.

Abstract: A memory device can include at least one array comprising a plurality of elements programmable between at least two different states, each state having a different time to a change in property under applied sense conditions; a read circuit configured to apply the sense conditions to selected elements and detect changes in property of the selected elements to generate read data; a latch circuit configured to store read data from the read circuit; and a transfer path configured to provide a parallel data transfer path between the read circuit and the latch circuit.

Abstract: A system and method for using a wireless browser to send local information from a wireless handset to a Web server. A service request received from a handset user includes the type of local information needed to carry out the request as well as the URL address of the server. The handset confirms that the input is not a telephone number to be dialed. If the input is a telephone number, the browser is terminated and the number is dialed. Otherwise, the browser acquires the local information needed to carry out the request from the handset. The local information is appended to the URL address, which is extracted from the user input, and the browser is instructed to navigate to the URL address to provide the local information to the server.

Abstract: A system and method for using a wireless browser to send local information from a wireless handset to a Web server. A service request received from a handset user includes the type of local information needed to carry out the request as well as the URL address of the server. The handset confirms that the input is not a telephone number to be dialed. If the input is a telephone number, the browser is terminated and the number is dialed. Otherwise, the browser acquires the local information needed to carry out the request from the handset. The local information is appended to the URL address, which is extracted from the user input, and the browser is instructed to navigate to the URL address to provide the local information to the server.

Abstract: Structures and methods for controlling operation of a programmable impedance element are disclosed herein. In one embodiment, a method of controlling a programmable impedance element can include: (i) receiving a program or erase command to be executed on the programmable impedance element; (ii) selecting an operation algorithm for executing the command, where the operation algorithm is selected from among a plurality of operation algorithms by decoding at least two bits stored in a register; (iii) determining, using the register, a plurality of option variables for the selected operation algorithm, where the option variables are used to set conditions for one or more of a plurality of program and erase operations of the selected operation algorithm; and (iv) executing the command on the programmable impedance element by performing the one or more of the plurality of program and erase operations of the selected operation algorithm.

Abstract: A memory device can include a plurality of programmable elements; at least one sense circuit that generates sense data values from detected impedances of accessed programmable elements; and at least one data store circuit that stores initial data values from the at least one sense circuit, and stores output data values from the at least one sense circuit after check conditions have been applied to at least one programmable element. The check conditions can induce a change in impedance for programmable elements programmed to at least one predetermined state. Methods can include reading data from at least one memory cell of a memory device comprising a plurality of such memory cells; if the read data has a first value, providing such data as an output value; and if the read data has a second value, repeating access to the memory cell to confirm the read data value.

Abstract: In one embodiment, a method of operating a resistive switching device includes applying a signal comprising a pulse on a first terminal of a two terminal resistive switching device having the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.

Abstract: An integrated circuit may include a plurality of sub bit line groups, each sub bit line group coupled to a different main bit line by a corresponding access device; and a plurality of programmable impedance elements arranged into element groups, each element group being coupled to a corresponding each sub bit line.

Abstract: An integrated circuit may include: access circuits that couple first electrodes of a plurality of programmable metallization cells (PMC) to access paths in parallel, each PMC comprising a solid ion conducting material formed between the first electrode and a second electrode; a plurality of write circuits, each coupled to a different access path, and each coupling the corresponding access path to a first voltage in response to input write data having a first value and to a second voltage in response to the input write data having a second value; and a node setting circuit that maintains second electrodes of the PMCs at a substantially constant third voltage while write circuits couple the access paths to the first or second voltages.