Patents by Inventor John E. Epler
John E. Epler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120187372Abstract: An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 ?m in some embodiments, less than 10 ?m in some embodiments. The top side of the semiconductor structure may be textured.Type: ApplicationFiled: March 19, 2012Publication date: July 26, 2012Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Rafael I. Aldaz, John E. Epler, Patrick N. Grillot, Michael R. Krames
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Patent number: 8202741Abstract: A compliant bonding structure is disposed between a semiconductor device and a mount. In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.Type: GrantFiled: March 4, 2009Date of Patent: June 19, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: James G. Neff, John E. Epler, Stefano Schiaffino
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Patent number: 8202742Abstract: A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.Type: GrantFiled: January 28, 2011Date of Patent: June 19, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Steven Paolini, Michael D. Camras, Oscar A. Chao Pujol, Frank M. Steranka, John E. Epler
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Patent number: 8188508Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure includes an n-contact region and a p-contact region. A cross section of the n-contact region comprises a plurality of first regions wherein portions of the light emitting layer and p-type region are removed to expose the n-type region. The plurality of first regions are separated by a plurality of second regions wherein the light emitting layer and p-type region remain in the device. The device further includes a first metal contact formed over the semiconductor structure in the p-contact region and a second metal contact formed over the semiconductor structure in the n-contact region. The second metal contact is in electrical contact with at least one of the second regions in the n-contact region.Type: GrantFiled: December 6, 2011Date of Patent: May 29, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventor: John E. Epler
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Patent number: 8174025Abstract: A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.Type: GrantFiled: June 9, 2006Date of Patent: May 8, 2012Assignee: Philips Lumileds Lighting Company, LLCInventors: John E. Epler, Michael R. Krames, Hanmin Zhao, James C. Kim
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Publication number: 20120074457Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure includes an n-contact region and a p-contact region. A cross section of the n-contact region comprises a plurality of first regions wherein portions of the light emitting layer and p-type region are removed to expose the n-type region. The plurality of first regions are separated by a plurality of second regions wherein the light emitting layer and p-type region remain in the device. The device further includes a first metal contact formed over the semiconductor structure in the p-contact region and a second metal contact formed over the semiconductor structure in the n-contact region. The second metal contact is in electrical contact with at least one of the second regions in the n-contact region.Type: ApplicationFiled: December 6, 2011Publication date: March 29, 2012Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventor: JOHN E. EPLER
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Publication number: 20120045858Abstract: A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion of the p-type region and a second material in direct contact with a second portion of the p-type region adjacent to the first portion. The first material and second material are formed in planar layers of substantially the same thickness.Type: ApplicationFiled: November 3, 2011Publication date: February 23, 2012Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventor: John E. Epler
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Publication number: 20120025231Abstract: LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.Type: ApplicationFiled: October 10, 2011Publication date: February 2, 2012Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Michael R. Krames, John E. Epler, Daniel A. Steigerwald, Tal Margalith
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Patent number: 8089091Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure includes an n-contact region and a p-contact region. A cross section of the n-contact region comprises a plurality of first regions wherein portions of the light emitting layer and p-type region are removed to expose the n-type region. The plurality of first regions are separated by a plurality of second regions wherein the light emitting layer and p-type region remain in the device. The device further includes a first metal contact formed over the semiconductor structure in the p-contact region and a second metal contact formed over the semiconductor structure in the n-contact region. The second metal contact is in electrical contact with at least one of the second regions in the n-contact region.Type: GrantFiled: June 18, 2009Date of Patent: January 3, 2012Assignee: Koninklijke Philips Electronics N.V.Inventor: John E. Epler
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Patent number: 8080828Abstract: Low profile, side-emitting LEDs are described that generate white light, where all light is emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED emits blue light and is a flip chip with the n and p electrodes on the same side of the LED. Separately from the LED, a transparent wafer has deposited on it a red and green phosphor layer. The phosphor color temperature emission is tested, and the color temperatures vs. positions along the wafer are mapped. A reflector is formed over the transparent wafer. The transparent wafer is singulated, and the phosphor/window dice are matched with the blue LEDs to achieve a target white light color temperature. The phosphor/window is then affixed to the LED.Type: GrantFiled: December 12, 2007Date of Patent: December 20, 2011Assignee: Philips Lumileds Lighting Company, LLCInventors: Michael R. Krames, Gerd Mueller, Oleg Borisovich Shchekin, Mark Pugh, Gerard Harbers, John E. Epler, Serge Bierhuizen, Regina Mueller-Mach
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Patent number: 8076682Abstract: A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion of the p-type region and a second material in direct contact with a second portion of the p-type region adjacent to the first portion. The first material and second material are formed in planar layers of substantially the same thickness.Type: GrantFiled: July 21, 2009Date of Patent: December 13, 2011Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventor: John E. Epler
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Patent number: 8062916Abstract: LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.Type: GrantFiled: November 6, 2008Date of Patent: November 22, 2011Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting CompanyInventors: Michael R. Krames, John E. Epler, Daniel A. Steigerwald, Tal Margalith
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Patent number: 8053905Abstract: A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.Type: GrantFiled: October 5, 2010Date of Patent: November 8, 2011Assignee: Koninklijke Philips Electronics N.V.Inventors: John E. Epler, Michael R. Krames, James G. Neff, Stefano Schiaffino
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Publication number: 20110193059Abstract: A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.Type: ApplicationFiled: April 12, 2011Publication date: August 11, 2011Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: JONATHAN J. WIERER, JR., JOHN E. EPLER
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Publication number: 20110132521Abstract: A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.Type: ApplicationFiled: January 28, 2011Publication date: June 9, 2011Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: STEVEN PAOLINI, MICHAEL D. CAMRAS, OSCAR ARTURO CHAO PUJOL, FRANK M. STERANKA, JOHN E. EPLER
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Publication number: 20110121332Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive non-III-nitride material is disposed in direct contact with the n-type region. A total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is less than one micron.Type: ApplicationFiled: November 23, 2009Publication date: May 26, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Frédéric DUPONT, John E. EPLER
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Publication number: 20110114987Abstract: A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.Type: ApplicationFiled: October 5, 2010Publication date: May 19, 2011Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: John E. Epler, Michael R. Krames, James G. Neff, Stefano Schiaffino
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Patent number: 7928448Abstract: A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.Type: GrantFiled: December 4, 2007Date of Patent: April 19, 2011Inventors: Jonathan J. Wierer, Jr., John E. Epler
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Patent number: 7902566Abstract: A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.Type: GrantFiled: November 24, 2008Date of Patent: March 8, 2011Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Steven Paolini, Michael D. Camras, Oscar A. Chao Pujol, Frank M. Steranka, John E. Epler
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Publication number: 20110027975Abstract: A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.Type: ApplicationFiled: September 22, 2010Publication date: February 3, 2011Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Michael R. Krames, Nathan F. Gardner, John E. Epler