Abstract: A chamber valve (100) for use in processes requiring vacuum pressures has a compact design which minimizes the space needed for the valve in the travel direction. The chamber valve gate (116) is moveable between a first position in which the gate is offset from the portal (110), and a second position in which the gate is aligned with the portal. The gate will move into alignment with the portal while remaining within a plane parallel or nearly parallel to the portal.

Abstract: A quick coupling for connecting fluid lines with one-handed push-to-connect and pull-to-disconnect operation is described. The quick coupling achieves this preferred functionality with a minimum number parts, the quick coupling having only one spring and one dynamic seal. In addition to fluid carrying applications the quick coupling can be used for tool holding and power transmission.

Abstract: A rotary sputter magnetron assembly for use in sputtering target material onto a substrate is provided. The assembly comprises a longitudinally extending target tube having a longitudinal central axis, said target tube extending about a magnet array that is configured to generate a plasma confining magnetic field adjacent the target tube, said target tube supported for rotation about its longitudinal central axis and a pair of side shunts positioned parallel to the longitudinal central axis, and on opposing lengthwise sides of said target tube.

Abstract: An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.

Abstract: A linear anode layer ion source is provided that includes a top pole having a linear ion emitting slit. An anode under the top pole has a slit aligned with the top pole ion emitting slit. At least one magnet creates a magnetic field that passes through the anode slit. Wherein the width of the anode slit is 3 mm or less. A process of generating an accelerated ion beam is also provided that includes flowing a gas into proximity to said anode. By energizing a power supply electron flow is induced to the anode and the gas is ionized. Accelerating the ions from the anode through the linear ion emitting slit generates an accelerated ion beam by a process superior to that using a racetrack-shaped slit.

Abstract: A chamber valve (100) for use in processes requiring vacuum pressures has a compact design which minimizes the space needed for the valve in the travel direction. The chamber valve gate (116) is moveable between a first position in which the gate is offset from the portal (110), and a second position in which the gate is aligned with the portal. The gate will move into alignment with the portal while remaining within a plane parallel or nearly parallel to the portal.

Abstract: A quick coupling for connecting fluid lines with one-handed push-to-connect and pull-to-disconnect operation is provided. The quick coupling achieves this preferred functionality with a minimum number parts, the quick coupling having only one spring and one dynamic seal. In addition to fluid carrying applications the quick coupling can be used for tool holding and power transmission.

Abstract: A rotary sputter magnetron assembly for use in sputtering target material onto a substrate is provided. The assembly comprises a longitudinally extending target tube having a longitudinal central axis, said target tube extending about a magnet array that is configured to generate a plasma confining magnetic field adjacent the target tube, said target tube supported for rotation about its longitudinal central axis and a pair of side shunts positioned parallel to the longitudinal central axis, and on opposing lengthwise sides of said target tube.

Abstract: An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.

Abstract: An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.

Abstract: A linear anode layer ion source is provided that includes a top pole having a linear ion emitting slit. An anode under the top pole has a slit aligned with the top pole ion emitting slit. At least one magnet creates a magnetic field that passes through the anode slit. Wherein the width of the anode slit is 3 mm or less. A process of generating an accelerated ion beam is also provided that includes flowing a gas into proximity to said anode. By energizing a power supply electron flow is induced to the anode and the gas is ionized. Accelerating the ions from the anode through the linear ion emitting slit generates an accelerated ion beam by a process superior to that using a racetrack-shaped slit.

Abstract: A duoplasmatron is provided having a cathode, an anode with linear slit, and an intermediate electrode (IE) between the cathode and the anode where the IE has an opening that is aligned with the anode slit. A magnet forms a magnetic field that passes through the anode slit. A discharge passes from the cathode to the anode through the IE opening and the anode slit. The discharge is constricted through the IE opening and the magnetic field in the anode slit. An extractor external to the anode accelerates ions through an ion emitting slit aligned with the anode slit. A process of generating an accelerated ion beam is provided that includes flowing a gas into the IE and then energizing at least one power supply to induce electron flow to the anode. Ionizing the gas in the gap between the IE and anode. The ions are accelerated from the anode through the extractor ion emitting slit forming a linear ion beam.

Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.

Abstract: A clamp is provided that incorporates a plurality of flexible links with V flexures between the links to maintain even spacing of the links before and during installation. Each link has multiple segments joined around at least one flexure point, and a floating band surrounding the links to distribute clamping pressure that is produced along a circumference of contact points. The clamp provides evenly distributed clamping pressure by increasing the number of clamping contact points between the clamp and articles being joined. The clamp has non-limiting applications for clamping target tubes or as a vacuum flange for ISO fittings. A clamp can produce a vacuum tight seal between a target tube and end block or end support flange of a rotary magnetron without resort to tools, and as such is rapidly secured in place.

Abstract: A process for the deposition of a tin oxide film is provided that includes the decomposition of a tetravalent tin precursor under conditions of plasma enhanced chemical vapor deposition in a linear plasma source and onto a substrate moving through a plasma generated by the linear plasma source with a linear uniformity of thickness that varies by less than 5 thickness percent across the substrate. The substrate having a width of greater than 30 centimeters. The tin oxide film contains a dopant and a dopant concentration such that the film has a resistivity as a function of film deposition temperature of less than ?4.6×10?5 Ohm-centimeter per degree Kelvin (T) plus 0.01 Ohm-centimeter where T is between 293 Kelvin and 673 Kelvin.

Abstract: An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.

Abstract: A process for producing plasma coated glass substrates free of back side coating (BSC) is provided. A low-E glass coated structure is also provided that uses a BSC as a protective coating that promotes transport and handling of low-E glass that is then subsequently delaminated. A thin film is deposited on the back side of the glass substrate before the top side of the glass is coated. Then, during the sputter down process, BSC occurs as normal and deposits over this back side film (BSF). In a subsequent process, outside the vacuum chamber, the glass back side is washed or otherwise delaminated. The BSF composition is selected to make the BSC easily removed in this wash process or other delamination process.

Abstract: A closed drift ion source is provided comprising a single magnetic source, a first pole and a second pole. The ends of the first and second poles are separated by a gap. The magnetic source is disposed proximate to one of the first pole and second pole. A first magnetic path is provided between one magnetic pole of the single magnetic source and the end of the first pole. A second magnetic path is provided between the other magnetic pole of the single magnetic source and the end of the second pole. The first and second magnetic paths are selectively constructed to produce a symmetrical magnetic field in the gap.

Abstract: A rotary magnetron is provided with an end block for rotatably supporting a target on an axis of rotation. An elongate magnetic bar assembly is disposed within the target. A stator shaft is affixed in the end block; one end of the stator shaft is coupled to the elongate magnetic bar assembly to support the elongate magnetic bar assembly. The target has a target shaft extending over the stator shaft and rotatable thereon around the axis of rotation. The rotary magnetron is characterized by a rotating coolant seal disposed inside the target shaft proximate the one end of the stator shaft and proximate to the elongate magnetic bar assembly.

Abstract: A process for powering an electrical load includes applying a rectified alternating current waveform across the load for a first time period with only a single power supply for at least two half cycles. At least one half cycle of an alternating current waveform of opposite polarity are then applied relative to the rectified alternating current waveform across the load for a second time period. Rectified alternating current waveform is then again applied across the load for at least two half cycles for a third time period to power the electrical load. The rectified alternating current waveform can be applied a direct current offset. A power supply is provided for provided power across the load according to this process.