Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.

Abstract: In some embodiments, the invention includes a cylindrical cathode target assembly for use in sputtering target material onto a substrate that comprises a generally cylindrical target, means for rotating the target about its axis during a sputtering operation, an elongated magnet carried within the target for generation of a plasma-containing magnetic field exterior to but adjacent the target, a framework for supporting the magnet against rotation within the target, and a power train for causing the magnet to oscillate within and axially of the target in a substantially asynchronous manner to promote generally uniform target utilization along its length, as well as its method of use. In some embodiments, the magnet is oscillated in response to rotation of the target.

Abstract: A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle extending outwardly therefrom to emit the ion beam. The aperture or outlet of the nozzle has a second width, which second width is less than the first width. An ionizable gas is introduced to the discharge cavity. At least one electrode connected to the AC power supply, alternatively serving as an anode or a cathode, is capable of supporting at least one magnetron discharge region within the discharge cavity when serving as a cathode electrode. A plurality of magnets generally facing one another, are disposed adjacent each discharge cavity to create a magnetic field null region within the discharge cavity.

Abstract: A method and apparatus for directing an ion beam toward a surface of a substrate is disclosed. Certain embodiments of the invention relate generally to ion beam sources adapted to direct ion beams toward a surface of a substrate at an oblique angle of incidence relative to the surface. Certain embodiments of the invention are adapted to direct two ion beam portions toward a substrate surface, the ion beam portions having substantially equal throw distances. Preferred embodiments of the invention may be useful in etching applications, where the angle of incidence and throw distance of two ion beam portions are well suited for etching the surface of a substrate.

Abstract: A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.

Abstract: Magnetically enhanced glow discharge devices are disclosed for the purpose of PECVD, etching or treating a substrate in a vacuum chamber. Two cathode surfaces are separated by a gap. A mirror magnetic field emanates from the cathode surfaces and passes through the gap. An anode structure forms diverging electric fields from each cathode to the anode, where the electric fields pass through the magnetic field 360 degrees around the dipole magnetic field. A closed loop electron trap is formed by the diverging electric fields and the expanding magnetic field in the gap. With a chamber pressure in the range of 0.1 to 100 mTorr and an applied voltage between the cathode and anode surfaces, a plasma is formed in the electron trap and in the plane of the trap. By shaping the plasma poles and exposing the sides of the cathode surfaces to the substrate, the created Hall current of the plasma can be brought into direct contact with the substrate.

Abstract: Presented is a method and apparatus for incrementally varying the frictional forces along an articulable column having succesive joints formed of alternate ball and socket members. Friction is varied by varying the contact angle between said ball and socket members along the length of the column and by supplying a compressive force to said joints via a tensioned means throughout the column. The effect of varying the frictional forces along the column is to vary the stiffness of individual column joints creating a structural member which can be tailored to the load requirements of a specific application.

Abstract: A method and apparatus for evacuating an enclosed chamber which utilizes a tandem connection of a booster pump and a mechanical pump in a manner to maximize the rate of evacuation of the chamber but without exceeding the rating of the booster pump and damaging it. A gas bypass around the booster pump is provided with a proportional valve that is operated to start an evacuation of the chamber with the bypass path fully opened but the gradually closing that path in a manner to maintain a differential pressure across the booster pump at a predetermined level, until the bypass path has been fully closed.

Abstract: A gate valve for sealing an opening in the wall of a vacuum processing chamber is disclosed. The valve includes a gate having a pair of wheels mounted on opposite ends of the gate and a curved track aligned and shaped to guide the wheels through an angle so that the plane of the gate is rotated out of the path of substrates as the gate moves between its sealing and open positions. The curvature of the track should be sufficient to rotate the gate through an angle of at least 60.degree., and preferably 75.degree. to 105.degree., in order to minimize the dimension of the chamber normal to the direction of substrate travel.