Patents by Inventor John F. Kaeding
John F. Kaeding has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8368179Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: GrantFiled: December 6, 2011Date of Patent: February 5, 2013Assignees: The Regents of the University of California, Japan Science and Technology AgencyInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20120264248Abstract: A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer has a theoretical a-lattice constant less than the theoretical a-lattice constant of GaN. The first layer is a substantially single crystal layer.Type: ApplicationFiled: June 29, 2012Publication date: October 18, 2012Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Linda T. ROMANO, Parijat Pramil DEB, Andrew Y. Kim, John F. KAEDING
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Publication number: 20120187415Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.Type: ApplicationFiled: April 5, 2012Publication date: July 26, 2012Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: John F. Kaeding, Hitoshi Sato, Michael Iza, Hirokuni Asamizu, Hong Zhong, Steven P. DenBaars, Shuji Nakamura
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Patent number: 8203159Abstract: A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.Type: GrantFiled: September 24, 2010Date of Patent: June 19, 2012Assignee: The Regents of the University of CaliforniaInventors: Hong Zhong, John F. Kaeding, Rajat Sharma, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Patent number: 8193079Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.Type: GrantFiled: February 9, 2007Date of Patent: June 5, 2012Assignee: The Regents of the University of CaliforniaInventors: John F. Kaeding, Hitoshi Sato, Michael Iza, Hirokuni Asamizu, Hong Zhong, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20120074525Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: ApplicationFiled: December 6, 2011Publication date: March 29, 2012Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Patent number: 8110482Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: GrantFiled: February 22, 2010Date of Patent: February 7, 2012Assignees: The Regents of the University of California, Japan Science and Technology AgencyInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20110057213Abstract: A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer has a theoretical a-lattice constant less than the theoretical a-lattice constant of GaN. The first layer is a substantially single crystal layer.Type: ApplicationFiled: September 8, 2009Publication date: March 10, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Linda T. ROMANO, Parijat Pramil DEB, Andrew Y. KIM, John F. KAEDING
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Publication number: 20110012234Abstract: A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.Type: ApplicationFiled: September 24, 2010Publication date: January 20, 2011Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Hong Zhong, John F. Kaeding, Rajat Sharma, James S. Speck, Steven P. DenBaars, Shuji Nakamua
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Patent number: 7858996Abstract: A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.Type: GrantFiled: February 20, 2007Date of Patent: December 28, 2010Assignee: The Regents of the University of CaliforniaInventors: Hong Zhong, John F. Kaeding, Rajat Sharma, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20100155778Abstract: A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: ApplicationFiled: March 3, 2010Publication date: June 24, 2010Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Hitoshi Sato, John F. Kaeding, Michael Iza, Troy J. Baker, Benjamin A. Haskell, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20100148195Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: ApplicationFiled: February 22, 2010Publication date: June 17, 2010Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hiroshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Patent number: 7691658Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1?xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1?xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: GrantFiled: January 19, 2007Date of Patent: April 6, 2010Assignees: The Regents of the University of California, Japan Science and Technology AgencyInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Patent number: 7687293Abstract: A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: GrantFiled: January 19, 2007Date of Patent: March 30, 2010Assignee: The Regents of the University of CaliforniaInventors: Hiroshi Sato, John F. Kaeding, Michael Iza, Troy J. Baker, Benjamin A. Haskell, Steven P. DenBaars, Shuji Nakamura