Abstract: A circuit for producing a compensated output signal includes a first and second stage of amplification (18) and (20) and a compensation circuit (16). The first stage of amplification (18) has a signal input, a signal output and a control input. The second stage of amplification (20) also has a signal input, a signal output and a control input with the signal input of the second stage (20) connected to the signal output of the first stage (18). A passive feedback network comprised of a series connected resistor (R.sub.F) and capacitor (C.sub.F) is connected between the signal input and the signal output of the second stage (20). The combination of the passive feedback network, the first stage (18) and the second stage (20) provide a gain and frequency response that is defined by three poles and one zero. The zero overlaps one of the poles thereby providing an extended frequency response. The passive feedback network varies the frequency response in response to manufacturing process variations.

Abstract: An amusement toy comprising an annular body which has an outer peripheral surface containing profiled hoop edge portions at its outboard edges which are joined by a squat barrel-shaped portion, such edge portions being integral with vertical side wall portions which are somewhat bulged in an outboard direction and which terminate at an inner rim. A gripping bar joins the rims and a cover is rigidly connected across the rims which bulges inwardly towards the center of the toy to form with peripheral surfaces a channel of about 120.degree. of arc, the end of the channel being about 30.degree. of arc from the bar. All parts of the toy except the gripping bar are composed of a rigid resin material and all surfaces are compound curves. A person who places himself in the channel and holds onto the gripping means is capable of causing the toy to rock on a level surface and by sufficient rocking to roll over whereby the cover joining the rims holds the person within the channel.

Abstract: A slotted worktable for a cutting machine for a high pressure fluid jet cutting device has a first frame mounted on a second frame for relative movement therewith, there being a support surface formed by two portions of a flexible support material which are trained round spaced apart horizontal rollers defining a slot. As the frames move relative to one another, the slot moves and a cutting head on a guide over the slot moves therewith so that it is always aligned with the slot.

Abstract: A slotted worktable for a cutting machine for a high pressure fluid jet cutting device has a first frame mounted on a second frame for relative movement therewith, there being a support surface formed by two portions of a flexible support material which are trained round spaced apart horizontal rollers defining a slot. As the frames moves relative to one another, the slot moves and a cutting head on a guide over the slots moves therewith so that it is always aligned therewith.

Abstract: Modules composed of polymer foam blocks with impervious shells are individually provided with a continuous channel about the periphery of each module. Joined, a plurality of such modules form a load-supporting floating structure, the integrity of which is maintained by floatable bars which are fitted closely into the facing channels formed in adjacent modules to provide interconnections between the modules and a tension band which encircles the structure in outer aligned channels formed by the modules, channel bars of relatively rigid material being first fitted into such encircling aligned channels, which bars in turn receive the tension band. Optionally, a plurality of perimeter pieces may be provided at the circumference of the structure, each perimeter piece including a tongue fitting in adjacent aligned channels of the modules, an encircling channel being defined by the perimeter pieces which receives the tension band.

Abstract: This disclosure is directed to an ion-implanted self-aligned transistor device including the fabrication method therefor wherein the emitter region and a pair of heavily doped base contact regions are spaced in a self-aligned manner from the periphery of the emitter region in order to precisely align the base contact regions at a predetermined distance from the periphery of the emitter region. Silicon nitride and silicon dioxide insulating layers are used together with an undercutting etching operation to precisely align the pair of spaced heavily doped base contact regions with respect to the periphery of the emitter region. The final completed semiconductor structure utilizes a single base metal contact electrode which makes contact to all of the spaced heavily doped base contact regions. A single emitter metal contact electrode is provided to the emitter regions located outside the periphery of the inner spaced heavily doped base contact regions.