Abstract: A metallization system for high temperature use comprises a layer strongly bonded to the surface of a semiconductor substrate in the form of an alloy of a metal in the amorphous state in which the metal is a transition metal, transition metal/normal metal alloy or transition metal/metalloid alloy having a crystallization temperature from the amorphous state in excess of 200.degree. C. The as-deposited amorphous films exhibit good adhesion and show at least an order of magnitude improvement in corrosion protection compared to polycrystalline coatings. Annealing treatments below the glass transition temperature have been found to further enhance this protective behavior of the amorphous films.

Abstract: Ohmic contacts for high temperature semiconductor devices comprising a layer strongly bonded to the surface of the semiconductor in the form of an alloy of a metal in the amorphous state in which the metal is a transition metal or a refractory metal having a recrystallization temperature from the amorphous state in excess of 200.degree. C.

Abstract: The preparation of micron sized droplets of high melting point metals by shearing the metal in the molten state into micron sized droplets while in a carrier in the form of a molten inorganic salt, glass or gas, in the presence of an oxidizing agent to form a thin protective coating on the micron sized particles while in their molten state and then allowing the formed micron sized particles to solidify.

Abstract: Bulk shapes and solid structures of amorphous metals formed of micron sized particles produced by droplet emulsion technique whereby undercooled droplets are solidified in the amorphous state with a stabilizing coating on the surfaces thereof, the shapes and solid structures being formed by dispersing the stabilizing coating and bringing the particles into intimate metal to metal contact for atomic bonding, without raising the temperature to crystallization temperature.