Abstract: A method for processing a substrate includes providing a set of patterned structures separated by a first gap on the substrate and directing first implanting ions to the substrate at a first ion energy, where the first implanting ions are effective to impact the substrate in regions defined by the first gap. The method also includes directing depositing ions to the substrate where the second ions are effective to deposit material on at least a portion of the set of patterned structures to form expanded patterned structures, where the expanded patterned structures are characterized by a second gap smaller than the first gap. The method further includes directing second implanting ions to the substrate at a second ion energy, where the second implanting ions effective to impact the substrate in regions defined by the second gap, the second ion energy comprising a higher ion energy than the first ion energy.

Abstract: A three-dimensional structure disposed on a substrate is processed so as to alter the etch rate of material disposed on at least one surface of the structure. In some embodiments, a conformal deposition of material is performed on the three-dimensional structure. Subsequently, an ion implant is performed on at least one surface of the three-dimensional structure. This ion implant serves to alter the etch rate of the material deposited on that structure. In some embodiments, the ion implant increases the etch rate of the material. In other embodiments, the ion implant decreases the etch rate. In some embodiments, ion implants are performed on more than one surface, such that the material on at least one surface is etched more quickly and material on at least one other surface is etched more slowly.

Abstract: In one embodiment a method of method of treating a sidewall layer of a patterned feature includes providing the patterned feature as an etched structure comprising one or more layers disposed on a substrate and generally parallel to a plane of the substrate defined by a front surface of the substrate. The sidewall layer comprises material from the one or more etched layers. The method further includes arranging the substrate proximate a sheath modifier that is adjacent a plasma, and providing ions in an ion dose to the substrate by extracting the ions from the plasma through the sheath modifier, the ions impinging upon the substrate at an angle with respect to a perpendicular to the plane of the substrate.

Abstract: A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.

Abstract: A method of forming a magnetic memory includes providing a layer stack comprising a plurality of magnetic layers and a plurality of electrically conducting layers on a base portion of a substrate; forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, the first mask feature and second mask feature defining an exposed region of the layer stack in portions of the layer stack therebetween; and directing ions towards exposed the region of the layer stack in an ion exposure that is effective to magnetically isolate the first protected region from the second protected region and to electrically isolate the first protected region from the second protected region without removal of the exposed region of the layer stack.

Abstract: A method of patterning a substrate includes providing a layer stack comprising a plurality of layers on a base portion of the substrate, where the layer stack includes an electrically conductive layer and a magnetic layer. The method further includes forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, and directing ions towards the layer stack to magnetically isolate and electrically isolate the first protected region from the second protected region.

Abstract: A method of etching a material layer on a substrate is described. In one embodiment, the method includes modifying an etch resistance of a material layer to a pre-determined etch process by doping the material layer using energetic charged particles, and etching the modified material layer using the pre-determined etch process.

Abstract: In one embodiment a magnetic memory includes a memory device base and a plurality of memory cells disposed on the memory cell base, where each memory cell includes a layer stack comprising a plurality of magnetic and electrically conductive layers arranged in a stack of layers common to each other memory cell. The magnetic memory further includes an implanted matrix disposed between the memory cells and surrounding each memory cell, where the implanted matrix includes component material of the layer stack of each memory cell inter mixed with implanted species, where the implanted matrix comprises a non-conducting material and a non-magnetic material, wherein each memory cell is electrically and magnetically isolated from each other memory cell.

Abstract: A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

Abstract: A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.

Abstract: A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB.

Abstract: A three-dimensional structure disposed on a substrate is processed so as to alter the etch rate of material disposed on at least one surface of the structure. In some embodiments, a conformal deposition of material is performed on the three-dimensional structure. Subsequently, an ion implant is performed on at least one surface of the three-dimensional structure. This ion implant serves to alter the etch rate of the material deposited on that structure. In some embodiments, the ion implant increases the etch rate of the material. In other embodiments, the ion implant decreases the etch rate. In some embodiments, ion implants are performed on more than one surface, such that the material on at least one surface is etched more quickly and material on at least one other surface is etched more slowly.

Abstract: In one embodiment a method of method of treating a sidewall layer of a patterned feature includes providing the patterned feature as an etched structure comprising one or more layers disposed on a substrate and generally parallel to a plane of the substrate defined by a front surface of the substrate. The sidewall layer comprises material from the one or more etched layers. The method further includes arranging the substrate proximate a sheath modifier that is adjacent a plasma, and providing ions in an ion dose to the substrate by extracting the ions from the plasma through the sheath modifier, the ions impinging upon the substrate at an angle with respect to a perpendicular to the plane of the substrate.

Abstract: A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.

Abstract: A method of patterning a substrate includes providing a layer stack comprising a plurality of layers on a base portion of the substrate, where the layer stack includes an electrically conductive layer and a magnetic layer. The method further includes forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, and directing ions towards the layer stack to magnetically isolate and electrically isolate the first protected region from the second protected region.

Abstract: A method of forming a magnetic memory includes providing a layer stack comprising a plurality of magnetic layers and a plurality of electrically conducting layers on a base portion of a substrate; forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, the first mask feature and second mask feature defining an exposed region of the layer stack in portions of the layer stack therebetween; and directing ions towards exposed the region of the layer stack in an ion exposure that is effective to magnetically isolate the first protected region from the second protected region and to electrically isolate the first protected region from the second protected region without removal of the exposed region of the layer stack.

Abstract: In one embodiment a magnetic memory includes a memory device base and a plurality of memory cells disposed on the memory cell base, where each memory cell includes a layer stack comprising a plurality of magnetic and electrically conductive layers arranged in a stack of layers common to each other memory cell. The magnetic memory further includes an implanted matrix disposed between the memory cells and surrounding each memory cell, where the implanted matrix includes component material of the layer stack of each memory cell inter mixed with implanted species, where the implanted matrix comprises a non-conducting material and a non-magnetic material, wherein each memory cell is electrically and magnetically isolated from each other memory cell.

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.