Abstract: A gas cluster ion beam (GCIB) processing method for preparing an isolation layer in a non-planar gate structure is described. The method forms a non-planar gate structure on a substrate. Additionally, the GCIB processing method includes generating a GCIB formed from a material source for forming an isolation layer for the non-planar gate structure. Additionally yet, the GCIB processing method includes selecting a beam energy, a beam energy distribution, a beam focus, and a beam dose to achieve a desired thickness of the isolation layer, accelerating the GCIB to achieve the beam energy, focusing the GCIB to achieve the beam focus, and irradiating at least a portion of the substrate with the accelerated GCIB according to the beam dose. The GCIB processing method forms the isolation layer at a base surface adjacent a base of the non-planar gate structure using the GCIB to achieve the desired thickness.

Abstract: A method and system for treating a non-planar structure is described. The method includes forming a non-planar structure on a substrate. Additionally, the method includes generating a gas cluster ion beam (GCIB) formed from a material source for treatment of the non-planar structure, tilting the substrate relative to the GCIB, and irradiating the non-planar structure with the GCIB. The system includes a substrate tilt actuator coupled to a substrate holder and configured to tilt the substrate holder relative to a GCIB.

Abstract: A method for treating a structure is described. One embodiment includes forming a structure on a substrate, wherein the structure has a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane parallel with said substrate and one or more second surfaces lying substantially perpendicular to the first plane. Additionally, the method comprises directing a gas cluster ion beam (GCIB) formed from a material source toward the substrate with a direction of incidence, and orienting the substrate relative to the direction of incidence. The method further comprises treating the one or more second surfaces.

Abstract: A method for growing material on a substrate is described. The method comprises directionally growing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor for the thin film, wherein the growth occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and growth is substantially avoided on surfaces oriented substantially parallel to the direction of incidence.

Abstract: A method for infusing material below the surface of a substrate is described. The method comprises modifying a surface condition of a surface on a substrate to produce a modified surface layer, and thereafter, infusing material into the modified surface in the substrate by exposing the substrate to a gas cluster ion beam (GCIB) comprising the material.

Abstract: Methods of forming capping structures on one or more different material surfaces are provided. One embodiment includes disposing a semiconductor structure in a reduced pressure chamber, forming a capping GCIB within the reduced pressure chamber, and directing the capping GCIB onto at least one of the one or more different material surfaces, so as to form at least one capping structure on the one or more surfaces onto which the capping GCIB is directed.

Abstract: Methods and apparatus for controlling a gas cluster ion beam formed from a plurality of process gases in a gas mixture. The methods and apparatus involve measuring gas analysis data relating to the composition of the gas mixture and modifying the irradiation of the workpiece in response to the detected parameter. The gas analysis data can be derived from samples of the composition of the gas mixture flowing from a gas source to the gas cluster ion beam apparatus or samples of the residual gases inside the vacuum vessel of the gas cluster ion beam apparatus.

Abstract: A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.

Abstract: A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.

Abstract: Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods and apparatus for forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided. Various cluster tool configurations including gas-cluster ion-beam processing modules for copper capping, cleaning, etching, and film formation steps are disclosed.

Abstract: A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises providing to the reduced-pressure environment a gas cluster ion beam (GCIB) from a pressurized gas mixture, accelerating the GCIB, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film. In one embodiment, the pressurized gas mixture comprises a silicon-containing specie and at least one of a nitrogen-containing specie or a carbon-containing specie for forming a thin film containing silicon and at least one of nitrogen or carbon. In another embodiment, the gas mixture comprises a metal-containing specie for forming a thin metal-containing film.

Abstract: A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired.

Abstract: A method of preparing a floating trap type device on a substrate is described. The method comprises forming a trap layer structure on a substrate, and modifying a composition of one or more layers in the trap layer structure by exposing the trap layer structure to a gas cluster ion beam (GCIB).

Abstract: A method of forming shallow trench isolation on a substrate using a gas cluster ion beam (GCIB) is described. The method comprises generating a GCIB, and irradiating the substrate with the GCIB to form a shallow trench isolation structure by growing a dielectric layer in at least one region on the substrate.

Abstract: A method of forming a thin film on a substrate is described. The method comprises depositing a first material layer on a substrate using a first gas cluster ion beam (GCIB), the first material layer comprising a first atomic constituent, and growing a second material layer from at least a surface portion of the first material layer by introducing a second atomic constituent using a second GCIB, the second material layer comprising a reaction product of the first and second atomic constituents.

Abstract: A method of forming shallow trench isolation on a substrate using a gas cluster ion beam (GCIB) is described. The method comprises generating a GCIB, and irradiating the substrate with the GCIB to form a shallow trench isolation structure by depositing a dielectric layer in at least one region on the substrate.

Abstract: Methods for forming a dual damascene dielectric structure in a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. These methods minimize hard-mask layers during dual damascene ULK processing and eliminate hard-masks in the final ULK dual damascene structure. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel ULK dual damascene structure is disclosed with densified interfaces and no hard-masks.

Abstract: Embodiments of methods for improving a copper/dielectric interface in semiconductor devices are generally described herein. Other embodiments may be described and claimed.

Abstract: A method of treating a workpiece is described. The method comprises selectively forming a sacrificial material on one or more regions of a substrate or a layer on the substrate using a gas cluster ion beam (GCIB), and adjusting a surface profile of a surface on the substrate or the layer on the substrate by performing an etching process following the selective formation.

Abstract: A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.