Abstract: Cathodoluminescent field emission display devices features a radioactive cathode emitter which is used to produce primary electron emissions to drive the FED device. Radioactive emitters eliminate the need for complex emitter structures, such as conventional Spindt cathodes. In addition, the use of a radioactive emitter allows for an “all-firm” FED, and thus represents an improvement over existing devices by reducing emitter to phosphor spacing, as well as eliminating the use of internal vacuums.

Abstract: A cathodoluminescent field emission display device includes a faceplate through which emitted light is transmitted from an inside surface to an outside surface of the faceplate for viewing, a cathode electron emitter which provides a source of primary electron emissions for activating the display device, an anode of electrically conductive material disposed between the inside surface of the faceplate and the cathode emitter, and a light emitter layer of cathodoluminescent material disposed between the anode and the cathode emitter and capable of emitting light through the faceplate in response to bombardment by electrons emitted within the device. The cathode emitter is further defined as photosensitive material deposited onto a layer of transparent electrical conductive material. In operation, the photosensitive material generates electrons when exposed to light.

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium.

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium.

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium.

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium.

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium.

Abstract: A string set of series-connected incandescent bulbs adapted to being connected to a source of alternating-current operating potential and in which all of the bulb filaments in the set are individually provided with a non-avalanche shunt circuit which substantially maintains the rated voltage of the bulb across each of the bulb sockets whether or not an operative bulb occupies its respective socket and whereby the illumination of each remaining operative bulb continues to be substantially unchanged and substantially the same rated current continues to flow through said string set despite the absence of a plurality of bulbs from their respective sockets.

Abstract: For use in cathodoluminescent field emission display devices, a cathode emitter can comprise an inverted field effect transistor having a diamond film or other low effective work function material deposited onto the channel layer of the transistor, such that the diamond film provides a source of primary electron emissions. A variable voltage source is applied to the gate of the transistor creating an electric field that controls the conductivity of the channel layer, thereby activating or deactivating electron emissions from this cathode emitter structure. In addition, electron blocking junctions can be incorporated into the emitter structure to inhibit current flow through the device during a deactivated state. In a variation, the transistor of the cathode emitter has the diamond film being deposited onto an electrically conductive pad that is electrically connected to, and extending outwardly from, the transistor.

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium.

Abstract: A cathodoluminescent field emission display device features an enhancement layer disposed over at least selected portions of an outer surface of an extraction grid of the device. The enhancement layer provides enhanced secondary electron emissions. The enhancement layer is preferably near mono-molecular film of an oxide of barium, beryllium, calcium, magnesium, strontium or aluminum.

Abstract: A cathodoluminescent field emission display devices features an enhancement layer disposed over an outer surface of a substantially planar cathode electron emitter of the device. The enhancement layer provides enhanced secondary electron emissions. The enhancement layer is preferably near mono-molecular film of an oxide of barium, beryllium, calcium, magnesium, strontium or aluminum.

Abstract: For use in cathodoluminescent field emission display devices, a gated channel layer of an inverted field effect transistor functions as the electron emissive layer for a flat film surface conduction cathode emitter. In such emitters, electrons are emitted from the surface of a flat thin emissive film when an electric current is caused to flow through the film in parallel with the surface of the film. An electric field caused by a variable voltage source being applied to the gate of the transistor can control the conductivity of the channel layer, thereby controlling the level of electron emissions from the cathode emitter structure. In a variation, the field effect transistor is constructed with a two-tier structure that during operation is designed to keep conduction near the surface of the transistor. As a result, this device pushes electrons towards the exposed surface where they can then escape from the channel layer to bombard the cathodoluminescent phosphor anode.

Abstract: A novel apparatus for determining the location of an inoperative bulb in a series circuit of decorative Christmas tree type light bulbs is provided which comprises a housing member having an opening adapted to accommodate the physical insertion therein of each of the light bulbs to be tested while in said series circuit. An elongated electromagnetic radiation shield is fixedly secured within said opening and along the inner peripheral surface thereof and an elongated electro-magnetic radiation receptor is fixedly secured along the inner peripheral surface of said shield and insulated therefrom and adapted to intercept electromagnetic radiation which is radiated from a light bulb inserted therein. A battery operated audio amplifier is mounted within said housing and has an input terminal and an output terminal. An energizable signal indicator is fixedly secured to said housing.

Abstract: A magnetic and variable-volume sound producing device which comprises a housing member, a substantially planar acoustic-producing diaphragm supported along its peripheral edge by the housing, a spiral, multi-turn and electrically conductive coil fixedly secured to the diaphragm and adapted to be energized by an alternating voltage having a frequency within the range of approximately 100 Hz to 15,000 Hz to thereby cause the diaphragm to vibrate at a frequency determined by the applied alternating voltage in the presence of a magnetic field. A volume control permanent magnet is slidably mounted within the housing along a fixed predetermined path with respect to the coil and is connected to a manually operable lever means to be fixedly position at a predetermined physical location with respect to the coil along the predetermined path, whereby the volume of the audio output signal is determined by the physical position of the permanent magnet.

Abstract: An electromagnetic induction type hearing aid which comprises (1) an electromagnetic transmitter having an input for receiving a radiated acoustical signal and an output for radiating an alternating electromagnetic signal whose frequency components are determined by the input signal and (2) a wireless magnetostrictive vibrator of bimorph design and of biocompatible material and which is adapted to be surgically implanted on one of the bones of the ossicular chain in a spatial operative relationship to the transmitter output without the need for mechanical anchoring and without any components passing through the boundary of the middle ear of the user. The vibrator is further responsive to the electromagnetic signal radiated from the transmitter and vibrates the ossicular chain in response to such radiated electromagnetic signal to stimulate the inner ear to create the perception of sound to the user.

Abstract: Disclosed is a nonvolatile memory device which utilizes a laser beam recrystallized silicon layer having source-channel-drain regions. Underlying the recrystallized layer and separated therefrom by a memory dielectric is a gate in alignment with the source and drain. The gate is formed directly on a substrate of an insulative material (e.g. non-silicon material). The process of forming the above device comprises forming a conductive polysilicon gate on a substrate followed by a memory nitride layer deposition thereon. A thick oxide layer is formed over the nitride followed by removal of the thick oxide corresponding to a central portion of the gate thereby exposing the nitride therebeneath. The exposed nitride surface is thermally converted into a thin, stoichiometric memory SiO.sub.2. A doped polysilicon layer is then formed on the structure and thereafter converted to recrystallized silicon by subjecting it to laser radiation.

Abstract: A bit selectable, two bit per cell memory device using stacked or side-by-side fixed threshold and alterable threshold transistors. The alterable threshold transistors are used both as a switch to select the desired device or memory bank and also as a memory element. Selection between the code represented by the fixed threshold transistors and the code represented by the alterable threshold transistors is prescribed by block erase or block write cycles.

Abstract: Disclosed is a nonvolatile memory device which utilizes a laser beam recrystallized silicon layer having source-channel-drain regions. Underlying the recrystallized layer and separated therefrom by a memory dielectric is a gate in alignment with the source and drain. The gate is formed directly on a substrate of an insulative material (e.g. non-silicon material).The process of forming the above device comprises forming a conductive polysilicon gate on a substrate followed by a memory nitride layer deposition thereon. A thick oxide layer is formed over the nitride followed by removal of the thick oxide corresponding to a central portion of the gate thereby exposing the nitride therebeneath. The exposed nitride surface is thermally converted into a thin, stoichiometric memory SiO.sub.2. A doped polysilicon layer is then formed on the structure and thereafter converted to recrystallized silicon by subjecting it to laser radiation.

Abstract: The present invention relates to a liquid crystal display cell having an alignment film therein. The present invention also relates to a method of aligning liquid crystal molecules in a selected direction in a liquid crystal display cell. An alignment film whose film growth is oriented in the same direction is deposited on an electrode film of a liquid crystal cell. The alignment film is used to align the molecules of a liquid crystal material. The film growth sympathetically aligns the molecules of liquid crystals in the direction of the film growth. A liquid crystal display cell which has two such alignment films therein is used to form a polarizing liquid crystal display cell.