Abstract: A vascular repair device assembly includes a main prostheses, first internal prostheses, an optional second internal prostheses, and at least two sub-prostheses. Methods for delivering vascular repair devices include delivering a vascular repair device through a blood vessel to the aneurysm site, aligning a proximal open end of a main prosthesis cranially to the site of the aneurysm patient and directing a distal end of at least one additional one vascular repair device through a proximal end of at least a first internal lumen, and aligning the proximal end of the additional vascular repair device into a distal end of the at least one sub-prosthesis.

Abstract: Techniques for specifying and implementing a software application targeted for execution on a multiprocessor array (MPA). The MPA may include a plurality of processing elements, supporting memory, and a high bandwidth interconnection network (IN), communicatively coupling the plurality of processing elements and supporting memory. In some embodiments, software code may specify one or more cell definitions that include: program instructions executable to perform a function and one or more language constructs. The software code may further instantiate first, second, and third cell instances, each of which is an instantiation of one of the one or more cell definitions, where the instantiation includes configuration of the one or more language constructs such that: the first and second cell instances communicate via respective communication ports and the first and second cell instances are included in the third cell instance.

Abstract: Controlling exhaust after-treatment in a heavy-duty motor vehicle includes operating a diesel engine of a heavy-duty truck such that the diesel engine generates an exhaust gas flow that enters an exhaust after-treatment system of the heavy-duty truck, the exhaust after-treatment system including a selective catalytic reduction system, measuring a level of NOx gases in the exhaust gas flow downstream of the selective catalytic reduction system, and controlling a diesel exhaust fluid injector upstream of the selective catalytic reduction system to inject diesel exhaust fluid into the exhaust gas flow upstream of the selective catalytic reduction system at an injection rate that is based on the measured level of NOx gases.

Abstract: A light source includes a substrate, an array of semiconductor structures grown on the substrate, and multi-color micro-LEDs grown on surfaces of the array of semiconductor structures. Each semiconductor structure of the array of semiconductor structures has a shape of a truncated pyramid. The light source includes multiple sets of micro-LEDs formed on top surfaces of multiple sets of semiconductor structures of the array of semiconductor structures, or formed on the top surfaces and/or multiple sidewall surfaces of the array of semiconductor structures. The multiple sets of micro-LEDs are configured to emit light of multiple colors.

Abstract: A light source includes an array of micro-light emitting diodes (micro-LEDs), an array of micro-lenses, and a bonding layer bonding the array of micro-lenses to the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a first mesa structure formed in a plurality of semiconductor layers. The array of micro-lenses is bonded to a first semiconductor layer of the plurality of semiconductor layers by the bonding layer. The first semiconductor layer includes an array of second mesa structures formed therein. The first mesa structure and the second mesa structure are on opposite sides of the plurality of semiconductor layers. Each second mesa structure of the array of second mesa structures is aligned with a respective micro-lens of the array of micro-lenses and the first mesa structure of a respective micro-LED of the array of micro-LEDs.

Abstract: Controlling exhaust after-treatment in a heavy-duty motor vehicle includes operating a diesel engine of a heavy-duty truck such that the diesel engine generates an exhaust gas flow that enters an exhaust after-treatment system of the heavy-duty truck, the exhaust after-treatment system including a selective catalytic reduction system, measuring a level of NOx gases in the exhaust gas flow downstream of the selective catalytic reduction system, and controlling a diesel exhaust fluid injector upstream of the selective catalytic reduction system to inject diesel exhaust fluid into the exhaust gas flow upstream of the selective catalytic reduction system at an injection rate that is based on the measured level of NOx gases.

Abstract: A light source includes an array of micro-light emitting diodes (micro-LEDs), an array of micro-lenses, and a bonding layer bonding the array of micro-lenses to the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a first mesa structure formed in a plurality of semiconductor layers. The array of micro-lenses is bonded to a first semiconductor layer of the plurality of semiconductor layers by the bonding layer. The first semiconductor layer includes an array of second mesa structures formed therein. The first mesa structure and the second mesa structure are on opposite sides of the plurality of semiconductor layers. Each second mesa structure of the array of second mesa structures is aligned with a respective micro-lens of the array of micro-lenses and the first mesa structure of a respective micro-LED of the array of micro-LEDs.

Abstract: A light source comprises a backplane wafer with electrical circuits fabricated thereon, and an array of LEDs coupled to the backplane wafer. Each LED of the array of LEDs comprises a mesa structure including semiconductor epitaxial layers and characterized by inwardly tilted mesa sidewalls, a high-refractive index material region (e.g., with a refractive index greater than about 1.75, such as equal to or greater than a refractive index of the semiconductor epitaxial layers) surrounding the semiconductor epitaxial layers of the mesa structure and including outwardly tilted sidewalls, and a reflective layer on the outwardly tilted sidewalls of the high-refractive index material region. In one example, each LED of the array of LEDs also include a passivation layer on the inwardly tilted mesa sidewalls of the mesa structure.

Abstract: The different advantageous embodiments further provide a system for hierarchical mission management comprising a number of mission planners, a data processing system, and a communication system. The number of mission planners are associated with a number of agent groups. The data processing system is configured to execute the number of mission planners. The communication system is configured to provide communication between the number of mission planners.

Abstract: A method of forming a strain relaxation layer in an epitaxial crystalline structure, the method comprising: providing a crystalline template layer comprising a material with a first natural relaxed in-plane lattice parameter; forming a first epitaxial crystalline layer on the crystalline template layer, wherein the first epitaxial crystalline layer has an initial electrical conductivity that is higher than the electrical conductivity of the crystalline template layer; forming a second epitaxial crystalline layer on the first epitaxial crystalline layer, wherein the second epitaxial crystalline layer has an electrical conductivity lower than the initial electrical conductivity of the first epitaxial crystalline layer and comprises a material with a second natural relaxed in-plane lattice parameter that is different to the first natural relaxed in-plane lattice parameter of the crystalline template layer; forming pores in the first epitaxial crystalline layer by electrochemical etching of the first epitaxial cr

Abstract: A monolithic LED array precursor comprising a plurality of LED structures sharing a first semiconductor layer, wherein the first semiconductor layer defines a plane of the LED array precursor, each LED structure comprising (i) a second semiconductor layer on the first semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the second semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the second semiconductor layer has sloped sides, (ii) a third semiconductor layer on the second semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the third semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the third semiconductor layer has sloped sides parallel to the sloped sides of the second semiconductor layer, (iii) a fourth semiconductor layer on the third semiconductor layer, having an upper surface portion

Abstract: An optical device comprising a light emitting structure having substantially vertical sidewalls, the light emitting structure comprising an active layer, the active layer being configured to emit light when an electrical current is applied to the device; an electrically insulating, optically transparent spacer layer having an internal face facing the sidewalls of the light emitting structure and an opposing external face, wherein the spacer layer is configured to enhance light extraction from the active layer; and a reflective, electrically conducting mirror layer disposed on the external face of the spacer layer.

Abstract: A method of forming an optical device, the method comprising the steps of forming spacers on the substantially vertical sidewalls of a sacrificial mesa, the spacers being formed from a first electrically insulating, optically transparent material, and having an internal face contacting the mesa, and a second opposing external face; depositing a reflective, electrically conducting material so as to form a mirror layer on the external face of the spacers; removing the sacrificial mesa so as to form a pocket between the internal faces of the spacers; installing a die having substantially vertical sidewalls into the pocket between the internal faces of the spacers.

Abstract: A light emitting diode (LED) device includes a substrate and a plurality of mesa structures. Each mesa structure includes a layer of a first semiconductor material, a porous layer of the first semiconductor material on the layer of the first semiconductor material, and a layer of a second semiconductor material on the porous layer. The porous layer is characterized by an areal porosity ?15%. The second semiconductor material is characterized by a lattice constant greater than a lattice constant of the first semiconductor material. Each mesa structure also includes an active region on the layer of the second semiconductor material and configured to emit red light, a p-contact layer on the active region, a dielectric layer on sidewalls of the p-contact layer and the active region, and an n-contact layer in physical contact with at least a portion of sidewalls of the layer of the second semiconductor material.

Abstract: Protected fluorescent reagent compounds and their methods of synthesis are provided. The compounds are useful in various fluorescence-based analytical methods, including the analysis of highly multiplexed optical reactions in large numbers at high densities, such as single molecule real time nucleic acid sequencing reactions. The compounds contain fluorescent dye elements, that allow the compounds to be detected with high sensitivity at desirable wavelengths, binding elements, that allow the compounds to be recognized specifically by target biomolecules, and protective shield elements, that decrease undesirable contacts between the fluorescent dye elements and the bound target biomolecules and that therefore decrease photodamage of the bound target biomolecules by the fluorescent dye elements.

Abstract: A method includes obtaining a first wafer including a first substrate and epitaxial layers that include a first semiconductor layer, a light-emitting region, and a second semiconductor layer; bonding a second substrate to the second semiconductor layer on the first wafer; removing the first substrate from the first wafer to expose the first semiconductor layer; depositing a reflector layer on the first semiconductor layer; forming a first metal bonding layer on the reflector layer; bonding a second metal bonding layer on a backplane wafer to the first metal bonding layer; removing the second substrate to expose the second semiconductor layer; and etching through the second semiconductor layer, the light-emitting region, the first semiconductor layer, the reflector layer, the first metal bonding layer, and the second metal bonding layer to form an array of mesa structures for an array of micro-light emitting diodes.

Abstract: A method of forming an optical device, the method comprising the steps of forming a mesa, the mesa comprising an active layer configured to emit light from a first light emitting surface of the mesa when subjected to an electrical current, the mesa further comprising a second surface opposite the light emitting surface and substantially vertical sidewalls, forming spacers on the mesa sidewalls, the spacers being formed from a first electrically insulating, optically transparent material, and having an internal face facing the mesa sidewalls, and an opposing external face, depositing a first layer of transparent conducting oxide on the light emitting surface of the mesa, the transparent conducting oxide having an internal face facing the second surface of the mesa, and an opposing external face, and depositing a layer of reflective, electrically conducting material over the transparent conducting oxide and external faces of the spacers.