Abstract: A system (10) for monitoring and controlling a fabrication process includes at least a first subsystem (12), a crystallographic analysis subsystem (14), and a second subsystem (16), wherein the first subsystem and second subsystem perform respective fabrication steps on a workpiece. The crystallographic analysis subsystem may be coupled to both the first subsystem and second subsystem. The analysis subsystem acquires crystallographic information from the workpiece after the workpiece undergoes a fabrication step by the first subsystem and then provides information, based on the crystallographic information acquired, for modifying parameters associated with the respective fabrication steps. The system may also include neural networks (24, 28) to adaptively modify, based on historical process data (32), parameters provided to the respective fabrication steps. The analysis subsystem may include a electromagnetic source (61), a detector (66), a processor (67), a controller (68) and a scanning actuator (65).

Abstract: A probe comprising a probe body having a body longitudinal axis and a shoulder, and a microstylet mechanically coupled to the shoulder, and a method of manufacturing the same. The microstylet extends from the shoulder and has a microstylet longitudinal axis coincident the body longitudinal axis with the microstylet having a cross section substantially smaller than a cross section of the probe body.

Abstract: The present invention provides a method of forming a dynamic template with a focused beam. The method includes forming a desired template that represents a desired image, forming an actual template that represents an actual image, such as a photolithographic mask or a semiconductor device feature, and comparing the desired template to the actual template to yield a deviation template. In one embodiment the deviation template is formed by subtracting the actual template from the desired template.

Abstract: The present invention provides a method of determining a crystallographic quality of a material located on a substrate. The method includes determining a set of crystallographic solutions for an unknown crystallographic orientation, and subsequently comparing the set of crystallographic solutions to adjacent known crystallographic orientations to determine the unknown crystallographic orientation. In a preferred embodiment, the set of crystallographic solutions may be a rank of crystallographic solutions which may represent the most probable crystallographic orientations. The rank of crystallographic solutions, in an alternative embodiment, may be represented by a vote, a fit and a confidence index.

Abstract: The present invention provides a probe comprising a probe body having a body longitudinal axis and a shoulder, and a microstylet mechanically coupled to the shoulder, and a method of manufacturing the same. The microstylet extends from the shoulder and has a microstylet longitudinal axis coincident the body longitudinal axis with the microstylet having a cross section substantially smaller than a cross section of the probe body.

Abstract: The present invention provides a sampler for collecting a specimen of a substance. In one embodiment, the sampler comprises a sampler body, a platen having first and second opposing sides wherein the first side is coupleable to an end of the sampler body, and a sampling medium coupleable to the second side and configured to retain a specimen of a substance thereon.

Abstract: The present invention provides a method of determining a crystallographic quality of a material located on a substrate. The method includes determining a set of crystallographic solutions for an unknown crystallographic orientation, and subsequently comparing the set of crystallographic solutions to adjacent known crystallographic orientations to determine the unknown crystallographic orientation. In a preferred embodiment, the set of crystallographic solutions may be a rank of crystallographic solutions which may represent the most probable crystallographic orientations. The rank of crystallographic solutions, in an alternative embodiment, may be represented by a vote, a fit and a confidence index.

Abstract: A method of determining the accuracy error in scanning signals of a semiconductor line width metrology device comprises the steps of creating a frequency signature template of a patterned feature formed on a semiconductor layer with a line width metrology measurement device that is in nominal operating condition. Another patterned feature similar to the first patterned feature is scanned and the waveform signal is generated of the line width patterned feature. The waveform signal is processed and converted into a frequency signature which is compared with the frequency signature template.

Abstract: A method of analyzing a patterned feature formed on a semiconductor layer is disclosed. The patterned feature is scanned to generate an amplitude modulated waveform signal of the line width. This waveform signal is processed for calculating the scale and shape of the patterned feature based on the profile of the amplitude modulated waveform signal. The calculated scale and shape of the patterned feature are compared to a template of a normal patterned feature having the desired shape and scale. The template is derived from scanning a normal patterned feature on a known sample.

Abstract: A non-destructive method for evaluating a topographical feature 16 of an integrated circuit 42, such as a photoresist runner, includes core sectioning the feature to remove a small section 22, without damage to the remainder of the wafer 36 on which the integrated circuit is formed. A tool having fine adjustment, such as a micromanipulator with a rod-shaped probe 24 in the form of a glass needle, is used to remove the section for examination and metrology. The section is separated from the underlying substrate surface 14 and can be examined from all sides. Variations in a critical dimension, such as line width W, along the length L of the section, as well as average measurements of the dimension, can be obtained.

Abstract: A method for analyzing a semiconductor surface having patterned features on the surface is disclosed. At least one patterned feature is scanned to produce a scanned waveform signal having signal segments corresponding to characteristic surface portions of the patterned feature. The signal segments are processed using an auto-correlation function to produce an auto-correlation signal for each characteristic surface portion of the patterned feature. A reference signal having signal segments corresponding to characteristic surface portions of a known patterned feature is provided and each segment of the auto-correlation signal is compared to the respective signal segments of the reference signal.

Abstract: A patterned transfer process in the manufacture of a semiconductor device is monitored. Patterned features formed on a semiconductor layer to be etched are scanned for generating a first amplitude modulated waveform intensity signal. The first amplitude modulated waveform intensity signal is sampled to extract a first measurement population of critical dimension measurements. The patterned features are etched and then scanned for generating a second amplitude modulated waveform intensity signal. The second amplitude modulated waveform intensity signal is then sampled to extract a second measurement population of critical dimension measurements, which are then cross-correlated to obtain correlation values of the etching process.

Abstract: A method for amplifying defects connected to a top surface of a semiconductor device comprises the steps of applying a dye, removing the dye, and applying a developing gel. The dye enters into defects connected to the top surface of the semiconductor device. After removal of the dye from the top surface and application of the developing gel, the dye contained within the defects leaches into the developing gel to form defect indications. These defect indications have a better optical visibility than the defects themselves. An apparatus for performing this method is also disclosed.