Patents by Inventor John M. Meldrim
John M. Meldrim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180331287Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.Type: ApplicationFiled: July 25, 2018Publication date: November 15, 2018Applicant: MICRON TECHNOLOGY, INC.Inventors: Swapnil A. Lengade, John M. Meldrim, Andrea Gotti
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Patent number: 10069069Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, a second electrode portion is coupled to the second chalcogenide structure, and a third electrode portion is between the first and second electrode portions. A first portion of an electrically conductive barrier material is disposed between the first and third electrode portions. A second portion of the electrically conductive barrier material is disposed between the second and third electrode portions.Type: GrantFiled: December 20, 2017Date of Patent: September 4, 2018Assignee: Micron Technology, Inc.Inventors: Swapnil A. Lengade, John M. Meldrim, Andrea Gotti
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Patent number: 10062844Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.Type: GrantFiled: September 17, 2015Date of Patent: August 28, 2018Assignee: Micron Technology, Inc.Inventors: Swapnil A. Lengade, John M. Meldrim, Andrea Gotti
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Publication number: 20180204851Abstract: Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.Type: ApplicationFiled: March 16, 2018Publication date: July 19, 2018Inventors: John M. Meldrim, Yushi Hu, Rita J. Klein, John D. Hopkins, Hongbin Zhu, Gordon A. Haller, Luan C. Tran
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Publication number: 20180130948Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, a second electrode portion is coupled to the second chalcogenide structure, and a third electrode portion is between the first and second electrode portions. A first portion of an electrically conductive barrier material is disposed between the first and third electrode portions. A second portion of the electrically conductive barrier material is disposed between the second and third electrode portions.Type: ApplicationFiled: December 20, 2017Publication date: May 10, 2018Applicant: MICRON TECHNOLOGY, INC.Inventors: Swapnil A. Lengade, John M. Meldrim, Andrea Gotti
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Patent number: 9935120Abstract: Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.Type: GrantFiled: February 21, 2016Date of Patent: April 3, 2018Assignee: Micron Technology, Inc.Inventors: John M. Meldrim, Yushi Hu, Rita J. Klein, John D. Hopkins, Hongbin Zhu, Gordon A. Haller, Luan C. Tran
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Publication number: 20160172373Abstract: Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.Type: ApplicationFiled: February 21, 2016Publication date: June 16, 2016Inventors: John M. Meldrim, Yushi Hu, Rita J. Klein, John D. Hopkins, Hongbin Zhu, Gordon A. Haller, Luan C. Tran
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Patent number: 9287379Abstract: Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.Type: GrantFiled: May 19, 2014Date of Patent: March 15, 2016Assignee: Micron Technology, Inc.Inventors: John M. Meldrim, Yushi Hu, Rita J. Klein, John D. Hopkins, Hongbin Zhu, Gordon A. Haller, Luan C. Tran
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Publication number: 20160005967Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.Type: ApplicationFiled: September 17, 2015Publication date: January 7, 2016Inventors: SWAPNIL A. LENGADE, JOHN M. MELDRIM, ANDREA GOTTI
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Publication number: 20150333143Abstract: Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.Type: ApplicationFiled: May 19, 2014Publication date: November 19, 2015Applicant: Micron Technology, Inc.Inventors: John M. Meldrim, Yushi Hu, Rita J. Klein, John D. Hopkins, Hongbin Zhu, Gordon A. Haller, Luan C. Tran
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Patent number: 9166158Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.Type: GrantFiled: February 25, 2013Date of Patent: October 20, 2015Assignee: Micron Technology, Inc.Inventors: Swapnil A. Lengade, John M. Meldrim, Andrea Gotti
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Patent number: 9105666Abstract: Semiconductor structures including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures.Type: GrantFiled: September 23, 2014Date of Patent: August 11, 2015Assignee: MICRON TECHNOLOGY, INC.Inventors: Jeffery B. Hull, John M. Meldrim
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Publication number: 20150011063Abstract: Semiconductor structures including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures.Type: ApplicationFiled: September 23, 2014Publication date: January 8, 2015Inventors: Jeffery B. Hull, John M. Meldrim
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Patent number: 8877624Abstract: Semiconductor structures including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures.Type: GrantFiled: January 10, 2013Date of Patent: November 4, 2014Assignee: Micron Technology, Inc.Inventors: Jeffery B. Hull, John M. Meldrim
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Publication number: 20140239245Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.Type: ApplicationFiled: February 25, 2013Publication date: August 28, 2014Applicant: Micron Technology, Inc.Inventors: Swapnil A. Lengade, John M. Meldrim, Andrea Gotti
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Publication number: 20140193969Abstract: Semiconductor structure including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures.Type: ApplicationFiled: January 10, 2013Publication date: July 10, 2014Applicant: Micron Technology, Inc.Inventors: Jeffery B. Hull, John M. Meldrim