Patents by Inventor John Mendonca

John Mendonca has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
    Patent number: 5985748
    Abstract: A method of chemical-mechanical polishing of a semiconductor device utilizes a combination of polishing steps, including a first step using a first slurry containing an abrasive component (i.e., mechanical component) and a chemical component (i.e., chemical reactants), and a second polishing step using a second slurry having a reduced amount of the abrasive component. The method is carried out with respect to metal (39), such as copper, deposited on a dielectric layer (34) and the first polishing step is stopped before the entirety of the metal overlying the dielectric layer is removed. In one embodiment, the second slurry has no abrasive component.
    Type: Grant
    Filed: December 1, 1997
    Date of Patent: November 16, 1999
    Assignee: Motorola, Inc.
    Inventors: David K. Watts, Franklin D. Nkansah, John Mendonca
  • Blanket tungsten deposition for dielectric
    Patent number: 4777061
    Abstract: A process is disclosed for depositing tungsten non-selectively on conductors and dielectrics without the use of an adhesive interlayer. The process comprises an argon pre-treatment followed by low power plasma deposition to nucleate the tungsten. A thick, adherent layer of tungsten is then deposited.
    Type: Grant
    Filed: December 14, 1987
    Date of Patent: October 11, 1988
    Assignees: Spectrum CVD, Inc.
    Inventors: Schyi-yi Wu, J. B. Price, John Mendonca, Yu Chang Chow
  • Process for CVD of tungsten
    Patent number: 4749597
    Abstract: A process is disclosed for reducing lateral encroachment and silicon consumption in LPCVD of tungsten. The process comprises a low temperature deposition of a thin layer of tungsten, followed by annealing in nitrogen at high temperature, follows by deposition of a thick layer of tungsten.
    Type: Grant
    Filed: October 19, 1987
    Date of Patent: June 7, 1988
    Assignee: Spectrum CVD, Inc.
    Inventors: John Mendonca, J. B. Price, Richard S. Rosler
  • Silicide to silicon bonding process
    Patent number: 4737474
    Abstract: A process for forming a bonding layer comprising amorphous silicon, titanium, chromium, or tungsten, between the silicide and the N+ polysilicon layer is disclosed. The bonding layer is preferably less than 50 nm. thick. After the bonding layer is deposited, a silicide layer is deposited and the wafer is then sintered at 900.degree.-1000.degree. C. for ten minutes or less.
    Type: Grant
    Filed: November 17, 1986
    Date of Patent: April 12, 1988
    Assignee: Spectrum CVD, Inc.
    Inventors: J. B. Price, Yu C. Chow, John Mendonca, Schyi-Yi Wu