Patents by Inventor John Michael Cotte
John Michael Cotte has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8263492Abstract: Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via comprises the hole and the first metal.Type: GrantFiled: April 29, 2009Date of Patent: September 11, 2012Assignee: International Business Machines CorporationInventors: John Michael Cotte, Christopher Vincent Jahnes, Bucknell Chapman Webb
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Publication number: 20120217651Abstract: Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via comprises the hole and the first metal.Type: ApplicationFiled: May 10, 2012Publication date: August 30, 2012Applicant: International Business Machines CorporationInventors: John Michael Cotte, Christopher Vincent Jahnes, Bucknell Chapman Webb
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Patent number: 7863189Abstract: Methods are provided for fabricating silicon carriers with conductive through-vias that allow high-yield manufacture of silicon carrier with low defect density. In particular, methods are provided which enable fabrication of silicon carries with via diameters such as 1 to 10 microns in diameter for a vertical thickness of less than 10 micrometers to greater than 300 micrometers, which are capable robust to thermal-mechanical stresses during production to significantly minimize the thermal mechanical movement at the via sidewall interface between the silicon, insulator, liner and conductor materials.Type: GrantFiled: January 5, 2007Date of Patent: January 4, 2011Assignee: International Business Machines CorporationInventors: Veeraraghaven S. Basker, John Michael Cotte, Hariklia Deligianni, John Ulrich Knickerbocker, Keith T. Kwietniak
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Publication number: 20100276786Abstract: Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via comprises the hole and the first metal.Type: ApplicationFiled: April 29, 2009Publication date: November 4, 2010Applicant: International Business Machines CorporationInventors: John Michael Cotte, Christopher Vincent Jahnes, Bucknell Chapman Webb
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Patent number: 7808798Abstract: An apparatus is described incorporating an interposer having a cavity for a portion of an antenna structure, having conductor through vias, a top Si part having interconnection wiring and having pads for electrically mounting an integrated circuit chip thereon, wherein the top Si part mates with the interposer electrically and mechanically. The interposer and top Si part may be scaled to provide an array of functional units. The invention overcomes the problem of combining a high efficient antenna with integrated circuit chips in a Si package with signal frequencies from 1 to 100 GHz and the problem of shielding components proximate to the antenna and reduces strain arising from mismatching of TCEs.Type: GrantFiled: April 4, 2008Date of Patent: October 5, 2010Assignee: International Business Machines CorporationInventors: John Michael Cotte, Brian Paul Gaucher, Janusz Grzyb, Nils Deneke Hoivik, Christopher Vincent Jahnes, John Ulrich Knickerbocker, Duixian Liu, John Harold Magerlein, Chirag Suryakant Patel, Ullrich R. Pfeiffer, Cornelia Kang-I Tsang
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Patent number: 7518229Abstract: An apparatus is described incorporating an interposer having a cavity for a portion of an antenna structure, having conductor through vias, a top Si part having interconnection wiring and having pads for electrically mounting an integrated circuit chip thereon, wherein the top Si part mates with the interposer electrically and mechanically. The interposer and top Si part may be scaled to provide an array of functional units. The invention overcomes the problem of combining a high efficient antenna with integrated circuit chips in a Si package with signal frequencies from 1 to 100 GHz and the problem of shielding components proximate to the antenna and reduces strain arising from mismatching of TCEs.Type: GrantFiled: August 3, 2006Date of Patent: April 14, 2009Assignee: International Business Machines CorporationInventors: John Michael Cotte, Brian Paul Gaucher, Janusz Grzyb, Nils Deneke Hoivik, Christopher Vincent Jahnes, John Ulrich Knickerbocker, Duixian Liu, John Harold Magerlein, Chirag Suryakant Patel, Ullrich R. Pfeiffer, Cornelia Kang-I Tsang
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Publication number: 20090001587Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.Type: ApplicationFiled: September 4, 2008Publication date: January 1, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John Michael Cotte, Nils Deneke Hoivik, Christopher Vincent Jahnes, Robert Luke Wisnieff
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Publication number: 20080277769Abstract: An integrated circuit package includes an integrated circuit with one or more on-chip inductors. A package cover covers the integrated circuit. A magnetic material is provided between the integrated circuit and the package cover. The magnetic material may be a soft magnetic thin film. The magnetic material may be affixed to the package cover by an adhesive. The magnetic material may be formed directly on the package cover by one of deposition, sputtering or spraying. The magnetic material may be affixed to the integrated circuit.Type: ApplicationFiled: May 8, 2007Publication date: November 13, 2008Inventors: John Michael Cotte, Hanyi Ding, Kai Di Feng, Zhong-Xiang He, Nils D. Hoivik, Xuefeng Liu
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Patent number: 7422983Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.Type: GrantFiled: February 24, 2005Date of Patent: September 9, 2008Assignee: International Business Machines CorporationInventors: John Michael Cotte, Nils Deneke Hoivik, Christopher Vincent Jahnes, Robert Luke Wisnieff
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Publication number: 20080186247Abstract: An apparatus is described incorporating an interposer having a cavity for a portion of an antenna structure, having conductor through vias, a top Si part having interconnection wiring and having pads for electrically mounting an integrated circuit chip thereon, wherein the top Si part mates with the interposer electrically and mechanically. The interposer and top Si part may be scaled to provide an array of functional units. The invention overcomes the problem of combining a high efficient antenna with integrated circuit chips in a Si package with signal frequencies from 1 to 100 GHz and the problem of shielding components proximate to the antenna and reduces strain arising from mismatching of TCEs.Type: ApplicationFiled: April 4, 2008Publication date: August 7, 2008Applicant: International Business Machines CorporationInventors: John Michael Cotte, Brian Paul Gaucher, Janusz Grzyb, Nils Deneke Hoivik, Christopher Vincent Jahnes, John Ulrich Knickerbocker, Duixian Liu, John Harold Magerlein, Chirag Suryakant Patel, Ullrich R. Pfeiffer
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Publication number: 20080164573Abstract: Methods are provided for fabricating silicon carriers with conductive through-vias that allow high-yield manufacture of silicon carrier with, low defect density. In particular, methods are provided which enable fabrication of silicon, carries with via diameters such as 1 to 10 microns in diameter for a vertical thickness of less than 10 micrometers to greater than 300 micrometers, which are capable robust to thermal-mechanical stresses during production to significantly minimize the thermal mechanical movement at the via sidewall interface between the silicon, insulator, liner and conductor materials.Type: ApplicationFiled: January 5, 2007Publication date: July 10, 2008Inventors: Veeraraghaven S. Basker, John Michael Cotte, Hariklia Deligianni, John Ulrich Knickerbocker, Keith T. Kwietniak
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Patent number: 7332436Abstract: A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface is contacted with the composition under thermodynamic conditions consistent with the retention of the liquid or supercritical carbon dioxide in the liquid or supercritical state.Type: GrantFiled: October 15, 2004Date of Patent: February 19, 2008Assignee: International Business Machines CorporationInventors: John Michael Cotte, Dario L. Goldfarb, Pamela Jones, Kenneth John McCullough, Wayne Martin Moreau, Keith R. Pope, John P. Simons, Charles J. Taft
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Publication number: 20080029886Abstract: An apparatus is described incorporating an interposer having a cavity for a portion of an antenna structure, having conductor through vias, a top Si part having interconnection wiring and having pads for electrically mounting an integrated circuit chip thereon, wherein the top Si part mates with the interposer electrically and mechanically. The interposer and top Si part may be scaled to provide an array of functional units. The invention overcomes the problem of combining a high efficient antenna with integrated circuit chips in a Si package with signal frequencies from 1 to 100 GHz and the problem of shielding components proximate to the antenna and reduces strain arising from mismatching of TCEs.Type: ApplicationFiled: August 3, 2006Publication date: February 7, 2008Applicant: International Business Machines CorporationInventors: John Michael Cotte, Brian Paul Gaucher, Janusz Grzyb, Nils Deneke Hoivik, Christopher Vincent Jahnes, John Ulrich Knickerbocker, Duixian Liu, John Harold Magerlein, Chirag Suryakant Patel, Ullrich R. Pfeiffer, Cornelia Kang-I Tsang
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Patent number: 7192868Abstract: A method of patterning and releasing chemically sensitive low k films without the complication of a permanent hardmask stack, yielding an unaltered free-standing structure is provided. The method includes providing a structure including a Si-containing substrate having in-laid etch stop layers located therein; forming a chemically sensitive low k film and a protective hardmask having a pattern atop the structure; transferring the pattern to the chemically sensitive low k film to provide an opening that exposes a portion of the Si-containing substrate; and etching the exposed portion of the Si-containing substrate through the opening to provide a cavity in the Si-containing substrate in which a free-standing low k film structure is formed, while removing the hardmask. In accordance with the present invention, the etching comprises a XeF2 etch gas.Type: GrantFiled: February 8, 2005Date of Patent: March 20, 2007Assignee: International Business Machines CorporationInventors: John Michael Cotte, Nils Deneke Hoivik, Christopher Vincent Jahnes
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Patent number: 6890855Abstract: A process of removing residue from an etched precision surface. In this process the etched precision surface is contacted with a composition which includes liquid or supercritical carbon dioxide and a fluoride-generating species.Type: GrantFiled: June 27, 2001Date of Patent: May 10, 2005Assignee: International Business Machines CorporationInventors: John Michael Cotte, Kenneth John McCullough, Wayne Martin Moreau, Keith R. Pope, John P. Simons, Charles J. Taft
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Patent number: 6838015Abstract: A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface is contacted with the composition under thermodynamic conditions consistent with the retention of the liquid or supercritical carbon dioxide in the liquid or supercritical state.Type: GrantFiled: September 4, 2001Date of Patent: January 4, 2005Assignee: International Business Machines CorporationInventors: John Michael Cotte, Dario L. Goldfarb, Pamela Jones, Kenneth John McCullough, Wayne Martin Moreau, Keith R. Pope, John P. Simons, Charles J. Taft
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Patent number: 6834671Abstract: A check valve for micro electro mechanical structure devices (MEMS), and in particular pertains to a check valve which is adapted to be employed in connection with micro electro mechanical structure devices which are intended to be employed with supercritical fluids constituting working fluids. In a preferred embodiment, the check valve is equipped with a bypass channel including a freely moveable plug structure which, in the open position of the valve enables the ingress of supercritical fluids under high superatmospheric pressures, and subsequent to the filling of the system, let down to atmospheric pressure, causes the plug to be moved into a permanent valve-closed position.Type: GrantFiled: December 22, 2003Date of Patent: December 28, 2004Assignee: International Business Machines CorporationInventors: John Michael Cotte, Kenneth John McCullough, Wayne Martin Moreau, John P. Simons, Charles J. Taft, Richard P. Volant
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Publication number: 20040134538Abstract: A check valve for micro electro mechanical structure devices (MEMS), and in particular pertains to a check valve which is adapted to be employed in connection with micro electro mechanical structure devices which are intended to be employed with supercritical fluids constituting working fluids. In a preferred embodiment, the check valve is equipped with a bypass channel including a freely moveable plug structure which, in the open position of the valve enables the ingress of supercritical fluids under high superatmospheric pressures, and subsequent to the filling of the system, let down to atmospheric pressure, causes the plug to be moved into a permanent valve-closed position.Type: ApplicationFiled: December 22, 2003Publication date: July 15, 2004Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John Michael Cotte, Kenneth John McCullough, Wayne Martin Moreau, John P. Simons, Charles J. Taft, Richard P. Volant
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Patent number: 6739346Abstract: A process and apparatus for cleaning filters prior to recycling or disposal. In this process and apparatus liquid or supercritical carbon dioxide contacts the plugged pores of a filter under conditions in which carbon dioxide remains in the liquid or supercritical state.Type: GrantFiled: July 29, 2002Date of Patent: May 25, 2004Assignee: International Business Machines CorporationInventors: John Michael Cotte, Kenneth John McCullough, Wayne Martin Moreau, Keith R. Pope, John P. Simons, Charles J. Taft
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Publication number: 20040077140Abstract: A uniformly thick oxide film on a substrate is formed by using an anodization apparatus which deposits a blanket precursor film on a surface of a substrate; provides electrical contact to the precursor film; moves the precursor film into contact with an electrolyte solution such that substantially all electrically conductive surfaces, e.g., pin contacts, the substrate edge and a backside of the substrate are electrically isolated from the electrolyte; ensures that the surface of the precursor film on the substrate is in direct contact with the electrolyte solution; and which applies an anodizing current and/or voltage between the precursor film and a counter electrode so as to compensate for a voltage drop resulting from the presence of the electrolyte.Type: ApplicationFiled: October 16, 2002Publication date: April 22, 2004Inventors: Panayotis C. Andricacos, Roy Arthur Carruthers, Stephan Alan Cohen, John Michael Cotte, Lynne M. Gignac, Kenneth Jay Stein, Keith T. Kwietniak, Seshadri Subbanna, Horatio Seymour Wildman, David Earle Seeger, Andrew Herbert Simon