Abstract: A cable includes a core wire, a shielding layer located on a periphery of the core wire, and an insulating skin at least partially located on a periphery of the shielding layer. The shielding layer includes at least a first metal layer and a second metal layer. The first metal layer and the second metal layer have different metal materials. The first metal layer and the second metal layer are integrally composited. With this arrangement, the shielding effect of the cable is improved.

Abstract: A cable includes a first metal conductor, a first insulator, a second metal conductor and a second insulator. The first insulator is at least partially wrapped on the first metal conductor. The second insulator is at least partially wrapped on the second metal conductor. The first metal conductor is adapted to transmit a first signal. The second metal conductor is adapted to transmit a second signal. The cable also includes an intermediate layer material at least partially wound on the first insulator and the second insulator. A dielectric constant of the intermediate layer material is lower than that of the first insulator, and the dielectric constant of the intermediate layer material is lower than that of the second insulator. With this arrangement, the cable of the present disclosure is capable of realizing low mode conversion and improving the high frequency characteristics.

Abstract: A quantum network may use long-lived quantum memories with optical interfaces incorporated into a scalable architecture. Color-center quantum emitters in diamond have emerged as a promising quantum-memory modality due to their optical properties and compatibility with scalable integration. Here, we disclose a cryogenically stable and network-compatible quantum-emitter module for use as a quantum memory. This quantum-emitter module includes a diamond microchiplet with quantum emitters in the form of silicon vacancies or other color centers. The diamond microchiplet is integrated with a silicon photonic integrated circuit (PIC), which is secured to a silicon bench with cryo-compatible epoxy. Waveguides in the PIC are butt-coupled to optical fibers in a silicon V-groove array, which is secured to the same silicon bench with more cryo-compatible epoxy.

Abstract: The application discloses a flat cable assembly, which includes a plurality of cables arranged in a row and an insulating film. The cables have a center line and include connecting portions, a signal wire and a grounding wire respectively. The connection portions are located on one side of the center line. The insulating film is disposed on the connecting portion of any one of the cables and located on one side of the central line. The cables are exposed from the insulating film. The insulating film is disposed on a single side of the cables, whereby the cables are exposed from the insulating film. The flat cable assembly is easily manufactured and the amount of the cables therein can be varied according to real practice condition. The grounding wire is integrated to each cable, whereby the flat cable assembly has an excellent anti-EMI effect and performance in signal transmission.

Abstract: The application discloses a flat cable assembly, which includes a plurality of cables arranged in a row and an insulating film. The cables have a center line and include connecting portions, a signal wire and a grounding wire respectively. The connection portions are located on one side of the center line. The insulating film is disposed on the connecting portion of any one of the cables and located on one side of the central line. The cables are exposed from the insulating film. The insulating film is disposed on a single side of the cables, whereby the cables are exposed from the insulating film. The flat cable assembly is easily manufactured and the amount of the cables therein can be varied according to real practice condition. The grounding wire is integrated to each cable, whereby the flat cable assembly has an excellent anti-EMI effect and performance in signal transmission.

Abstract: A cable includes a first metal conductor, a first insulator, a second metal conductor and a second insulator. The first insulator is at least partially wrapped on the first metal conductor. The second insulator is at least partially wrapped on the second metal conductor. The first metal conductor is adapted to transmit a first signal. The second metal conductor is adapted to transmit a second signal. The cable also includes an intermediate layer material at least partially wound on the first insulator and the second insulator. A dielectric constant of the intermediate layer material is lower than that of the first insulator, and the dielectric constant of the intermediate layer material is lower than that of the second insulator. With this arrangement, the cable of the present disclosure is capable of realizing low mode conversion and improving the high frequency characteristics.

Abstract: The application discloses a flat cable assembly, which includes a plurality of cables arranged in a row and an insulating film. The cables have a center line and include connecting portions, a signal wire and a grounding wire respectively. The connection portions are located on one side of the center line. The insulating film is disposed on the connecting portion of any one of the cables and located on one side of the central line. The cables are exposed from the insulating film. The insulating film is disposed on a single side of the cables, whereby the cables are exposed from the insulating film. The flat cable assembly is easily manufactured and the amount of the cables therein can be varied according to real practice condition. The grounding wire is integrated to each cable, whereby the flat cable assembly has an excellent anti-EMI effect and performance in signal transmission.

Abstract: The application discloses a flat cable assembly, which includes a plurality of cables and an insulating film. The cables are arranged in a row and have a center line. The plurality of cables respectively have a first connecting portion and a second connecting portion symmetrically disposed with the first connecting portion, a signal wire and a grounding wire. The first connection portion is located on one side of the center line, and the second connection portion is located on the other side of the center line. The insulating film is provided on the first connection portion and the second connection portion of any one of the plurality cables. The two sides of the insulating film do not protrude outward from the two outermost cables, and the two surfaces of the insulating film in the direction perpendicular to the center line are planes.

Abstract: A cable includes a first metal conductor, a first insulator, a second metal conductor and a second insulator. The first insulator includes a first arc-shaped surface. The second insulator includes a second arc-shaped surface. A distance between a central axis of the first metal conductor and a central axis of the second metal conductor is S. The first insulator and/or the second insulator are formed with a deformation surface at a position where the first insulator and the second insulator are in contact with each other. An outer diameter of a circle where the first arc-shaped surface is located and/or an outer diameter of a circle where the second arc-shaped surface is located is D, where S/D?0.99. The cable of the present disclosure can achieve low mode conversion and improve high frequency characteristics.

Abstract: The present disclosure provides an electric cable, comprising two signal conductors, a resin insulating layer, an expanded polytetrafluoroethylene insulating film, an electromagnetic shielding film, two ground conductors, and a covering layer. The resin insulating layer covers the two signal conductors. The expanded polytetrafluoroethylene insulating film covers the resin insulating layer. The electromagnetic shielding film covers the expanded polytetrafluoroethylene insulating film. The two ground conductors are disposed at two sides of the electromagnetic shielding film. The cladding layer dads the electromagnetic shielding film and the two ground conductors. Through the expanded polytetrafluoroethylene insulating film, the electric cable can be applied to compact products, and the electric cable can be highly flexible such that the signal transmission performance would not be affected after being repeatedly bent.

Abstract: The present disclosure provides an electric cable, comprising two signal conductors, a resin insulating layer, an expanded polytetrafluoroethylene insulating film, an electromagnetic shielding film, two ground conductors, and a covering layer. The resin insulating layer covers the two signal conductors. The expanded polytetrafluoroethylene insulating film covers the resin insulating layer. The electromagnetic shielding film covers the expanded polytetrafluoroethylene insulating film. The two ground conductors are disposed at two sides of the electromagnetic shielding film. The cladding layer dads the electromagnetic shielding film and the two ground conductors. Through the expanded polytetrafluoroethylene insulating film, the electric cable can be applied to compact products, and the electric cable can be highly flexible such that the signal transmission performance would not be affected after being repeatedly bent.

Abstract: The present disclosure provides an electric cable, comprising two signal conductors, a resin insulating layer, an expanded polytetrafluoroethylene insulating film, an electromagnetic shielding film, two ground conductors, and a covering layer. The resin insulating layer covers the two signal conductors. The expanded polytetrafluoroethylene insulating film covers the resin insulating layer. The electromagnetic shielding film covers the expanded polytetrafluoroethylene insulating film. The two ground conductors are disposed at two sides of the electromagnetic shielding film. The cladding layer clads the electromagnetic shielding film and the two ground conductors. Through the expanded polytetrafluoroethylene insulating film, the electric cable can be applied to compact products, and the electric cable can be highly flexible such that the signal transmission performance would not be affected after being repeatedly bent.

Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

Abstract: Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

Abstract: The application discloses a flat cable assembly, which includes a plurality of cables and an insulating film. The cables are arranged in a row and have a center line. The plurality of cables respectively have a first connecting portion and a second connecting portion symmetrically disposed with the first connecting portion, a signal wire and a grounding wire. The first connection portion is located on one side of the center line, and the second connection portion is located on the other side of the center line. The insulating film is provided on the first connection portion and the second connection portion of any one of the plurality cables. The two sides of the insulating film do not protrude outward from the two outermost cables, and the two surfaces of the insulating film in the direction perpendicular to the center line are planes.

Abstract: The application discloses a flat cable assembly, which includes a plurality of cables arranged in a row and an insulating film. The cables have a center line and include connecting portions, a signal wire and a grounding wire respectively. The connection portions are located on one side of the center line. The insulating film is disposed on the connecting portion of any one of the cables and located on one side of the central line. The cables are exposed from the insulating film. The insulating film is disposed on a single side of the cables, whereby the cables are exposed from the insulating film. The flat cable assembly is easily manufactured and the amount of the cables therein can be varied according to real practice condition. The grounding wire is integrated to each cable, whereby the flat cable assembly has an excellent anti-EMI effect and performance in signal transmission.

Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

Abstract: The subject matter described herein relates to methods and systems for fast imprinting of nanometer scale features in a workpiece. According to one aspect, a system for producing nanometer scale features in a workpiece is disclosed. The system includes a die having a surface with at least one nanometer scale feature located thereon. A first actuator moves the die with respect to the workpiece such that the at least one nanometer scale feature impacts the workpiece and imprints a corresponding at least one nanometer scale feature in the workpiece.

Abstract: Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.