Abstract: Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

Abstract: Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

Abstract: Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

Abstract: Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

Abstract: The subject matter described herein relates to methods and systems for fast imprinting of nanometer scale features in a workpiece. According to one aspect, a system for producing nanometer scale features in a workpiece is disclosed. The system includes a die having a surface with at least one nanometer scale feature located thereon. A first actuator moves the die with respect to the workpiece such that the at least one nanometer scale feature impacts the workpiece and imprints a corresponding at least one nanometer scale feature in the workpiece.

Abstract: The subject matter described herein relates to methods and systems for fast imprinting of nanometer scale features in a workpiece. According to one aspect, a system for producing nanometer scale features in a workpiece is disclosed. The system includes a die having a surface with at least one nanometer scale feature located thereon. A first actuator moves the die with respect to the workpiece such that the at least one nanometer scale feature impacts the workpiece and imprints a corresponding at least one nanometer scale feature in the workpiece.

Abstract: Communication cable including insulated conductors and a composite tape having an insulative layer and a conductive layer. The composite tape includes first and second lateral sections that are folded over each other to form a shielding tape. The shielding tape includes opposite inner and outer sides that are formed from the first and second lateral sections, respectively, and a folded edge that joins the inner and outer sides. The conductive layer defines the inner side, the outer side, and the folded edge. The shielding tape is wrapped helically about the insulated conductors a plurality of times along a length of the communication cable to form a plurality of wraps. The inner side of a subsequent wrap of the shielding tape overlaps a portion of the outer side of a prior wrap of the shielding tape.

Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

Abstract: Communication cable including insulated conductors and a composite tape having an insulative layer and a conductive layer. The composite tape includes first and second lateral sections that are folded over each other to form a shielding tape. The shielding tape includes opposite inner and outer sides that are formed from the first and second lateral sections, respectively, and a folded edge that joins the inner and outer sides. The conductive layer defines the inner side, the outer side, and the folded edge. The shielding tape is wrapped helically about the insulated conductors a plurality of times along a length of the communication cable to form a plurality of wraps. The inner side of a subsequent wrap of the shielding tape overlaps a portion of the outer side of a prior wrap of the shielding tape.

Abstract: The subject matter described herein relates to methods and systems for fast imprinting of nanometer scale features in a workpiece. According to one aspect, a system for producing nanometer scale features in a workpiece is disclosed. The system includes a die having a surface with at least one nanometer scale feature located thereon. A first actuator moves the die with respect to the workpiece such that the at least one nanometer scale feature impacts the workpiece and imprints a corresponding at least one nanometer scale feature in the workpiece.

Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

Abstract: A cable assembly includes elongated conductors, primary dielectric layers, a secondary dielectric layer, a conductive shield layer and a drain wire. The conductors communicate a signal. The primary dielectric layer is circumferentially disposed around each of the conductors. The secondary dielectric layer surrounds the primary dielectric layers. The conductive shield layer is disposed around the secondary dielectric layer. The drain wire is provided along an outer surface of the conductive shield layer and is electrically coupled with the conductive shield layer. The conductive shield layer communicates electromagnetic interference to an electric ground reference via the drain wire.

Abstract: A cable assembly includes elongated conductors, primary dielectric layers, a secondary dielectric layer, a conductive shield layer and a drain wire. The conductors communicate a signal. The primary dielectric layer is circumferentially disposed around each of the conductors. The secondary dielectric layer surrounds the primary dielectric layers. The conductive shield layer is disposed around the secondary dielectric layer. The drain wire is provided along an outer surface of the conductive shield layer and is electrically coupled with the conductive shield layer. The conductive shield layer communicates electromagnetic interference to an electric ground reference via the drain wire.

Abstract: The present invention relates to a process for the minimization of volatile organic sulphur byproducts in dimethyl sulfate quaternization of amines made with hypophosphorous acid, which leads to the formation of an odor stable product.

Abstract: This invention relates to assays for the detection of neutralizing antibodies. Further, this invention relates to assays for the detection of neutralizing antibodies specific for bone morphogenetic protein 2 (BMP-2) or capable of inhibiting at least one of the biological activities of BMP-2.

Abstract: Methods to detect GDF-8 modulating agents in animals, including humans, are provided herein, including methods to detect the presence of exogenous GDF-8 modulating agent such as a GDF-8 inhibitor in a biological sample. In particular, methods to assess the presence and/or quantity of a GDF-8 modulating agent in a biological sample are provided.

Abstract: This disclosure provides methods for the detection of antibodies to a GDF-8 modulating agent such as, e.g., MYO-029, in a biological sample. Methods to detect an immune response to a GDF-8 modulating agent are also included. In particular, methods to assess an immune response in animals, including humans, to a GDF-8 modulating agent such as a GDF-8 inhibitor are provided herein.