Abstract: A system and method for overcoming the above-described problems relating to the delivery of pulsed RF power to a plasma processing chamber. The power reflected from the chamber is reduced using one or more of the following techniques: (1) varying the RF frequency within a pulse period; (2) ramping up the pulse heights at the leading edge of the pulse train; (3) simultaneously transmitting a relatively low CW signal along with the pulsed signal; and (4) rapidly switching the shunt capacitance within a local matching network within a pulse period. The amount of power delivered to the plasma by the pulses is measured by way of a time-averaging mechanism coupled to a directional coupler connected to the transmission line. The time-averaging mechanism may comprise circuitry to measure temperatures of loads attached to the directional coupler, or analog integrating circuitry attached to the directional coupler, or digital integrating circuitry attached to the directional coupler.

Abstract: A plasma processor for a workpiece includes a coil for supplying an r.f. exciting field through a window to a plasma in a vacuum chamber. A powered non-magnetic metal member between the coil and plasma couples the field to the plasma. In first and second embodiments, the metal member is respectively (1) a plate abutting a face of the window inside the chamber and (2) a thin film on an interior face of the window. In a third embodiment, the plate and film are both used. All embodiments help to ignite the plasma. The second embodiment increases plasma stability and prevents window clouding by ionized plasma particles. Metal from the plate is sputtered as a deposit onto the workpiece. The third embodiment enables substantially simultaneous depositing and cleaning.

Abstract: A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.

Abstract: A coil for exciting an r.f. plasma in a vacuum plasma processing chamber includes plural radially and circumferentially extending turns connected between a pair of r.f. excitation terminals. In one embodiment, a drive mechanism varies r.f. field coupling coefficients between different radial and circumferential portions of the coil and the plasma. The drive mechanism includes plural drive shafts which drive different portions of the coil toward and away from the plasma. In a second embodiment, the drive mechanism drives an r.f. shield having at least one moving part for intercepting a portion of an r.f. plasma excitation field derived by the coil.

Abstract: A method for processing a substrate having an aluminum neodymium-containing layer is disclosed. The aluminum neodymium-containing layer has residual chlorine proximate to its etch surface. The method includes providing a first gas chemistry including HBr and SF6 which supplies a first plurality of fluorine ions, forming a first plasma from said first gas chemistry, passivating the etch surface of the aluminum neodymium-containing layer with the first plasma to cause a second plurality of fluorine ions to replace a first portion of the residual chlorine. This second plurality of fluorine ions is a subset of the first plurality of fluorine ions.

Abstract: A glass workpiece processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to flow rate of a heat transfer fluid flowing to the chuck to maintain the chucking force and the flow rate approximately constant. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. Peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber removes residual charge from the workpiece after workpiece lifting from the chuck.

Abstract: A method for dry etching an indium tin oxide (ITO) layer disposed above a substrate in a low pressure plasma reactor is disclosed. The method includes a step of placing a substrate having the ITO layer into the low pressure plasma reactor, a step of introducing an etchant gas into the low pressure plasma reactor; a step of striking a plasma from the etchant gas in the low pressure plasma reactor; and a step of etching the ITO layer with the plasma.

Abstract: An improved planar contact array switch having reduced susceptibility to electrostatic discharge includes a printed circuit board which carries at least one switch contact foil pair. Sandwiched between the circuit board and an insulative overlay is a dome-shaped disc which, when depressed, completes an electrical circuit between the switch contact foil pair. Bordering the periphery of the printed circuit board so as to bound the area occupied by each of the switch contact foil pair is a ground foil which advantageously is provided with at least one inwardly extending charge conductive foil which runs adjacent to each of the switch contact foil pairs for conducting any electrostatic discharge which penetrates the overlay within the area bordered by the ground foil.