Abstract: A method of assembling an electronic device and electronic packages therefrom. A die attach adhesive precursor is placed between a top surface of a workpiece and an IC die. The die attach adhesive precursor includes metal particles, a first plurality of first microcapsules having a polymerizable material inside, and a second plurality of second microcapsules having a polymerization agent inside to form a first polymer upon rupture of first and second microcapsules. A force sufficient to rupture at least a portion of the first plurality of first microcapsules and at least a portion of the second plurality of second microcapsules is applied to form a self-healing die attach adhesive wherein the first polymer binds the plurality of metal particles and the remaining microcapsules and secures the IC die to the top surface of the workpiece. The self-healing die attach adhesive generally includes at least 90 vol. % metal.

Abstract: A method for conductively attaching a workpiece (110) onto a substrate (101). Spreading a layer of an adhesive polymeric compound (130) over the first surface (101a) of the substrate, the compound including a suspension of electrically and thermally conductive first particles (140) intermixed with a suspension of ferromagnetic surfactant-coated second particles (141). Applying an external magnetic field (401) to the layer, the field oriented normal to the first surface and capable of arraying the ferromagnetic particles in lines, and, by causality, aligning the conductive particles in chains normal to the first surface. Orienting the second surface (110a) of the workpiece parallel to the first substrate surface (101a) and bringing the aligned conductive particle chains (140) in contact with the first and second surfaces by pressing the workpiece onto the layer and piercing the chain ends to touch the first and second surfaces.

Abstract: A packaged surface-mount semiconductor device has the outer, un-encapsulated lead segments structured in five adjoining portions: The first portion protrudes from the encapsulation about horizontally; the second portion forms a convex bend downwardly; the third portion is approximately straight downwardly; the fourth portion forms a concave bend upwardly; and the fifth portion is straight horizontally. Each segment has across the width a first groove in the third portion, either on the bottom surface or on the top surface. Preferably, the groove is about 2 leadframe thicknesses vertically over the bottom surface of the fifth lead portion. When stamped, the groove may have an angular outline about 5 and 50 ?m deep; when etched, the groove may have an approximately semicircular outline about 50 to 125 ?m deep. A second groove may be located in the second segment portion; a third groove may be located in the transition region from the third to the fourth segment portions.

Abstract: A method of assembling an electronic device and electronic packages therefrom. A die attach adhesive precursor is placed between a top surface of a workpiece and an IC die. The die attach adhesive precursor includes metal particles, a first plurality of first microcapsules having a polymerizable material inside, and a second plurality of second microcapsules having a polymerization agent inside to form a first polymer upon rupture of first and second microcapsules. A force sufficient to rupture at least a portion of the first plurality of first microcapsules and at least a portion of the second plurality of second microcapsules is applied to form a self-healing die attach adhesive wherein the first polymer binds the plurality of metal particles and the remaining microcapsules and secures the IC die to the top surface of the workpiece. The self-healing die attach adhesive generally includes at least 90 vol. % metal.

Abstract: A method of assembling an electronic device and electronic packages therefrom. A die attach adhesive precursor is placed between a top surface of a workpiece and an IC die. The die attach adhesive precursor includes metal particles, a first plurality of first microcapsules having a polymerizable material inside, and a second plurality of second microcapsules having a polymerization agent inside to form a first polymer upon rupture of first and second microcapsules. A force sufficient to rupture at least a portion of the first plurality of first microcapsules and at least a portion of the second plurality of second microcapsules is applied to form a self-healing die attach adhesive wherein the first polymer binds the plurality of metal particles and the remaining microcapsules and secures the IC die to the top surface of the workpiece. The self-healing die attach adhesive generally includes at least 90 vol. % metal.

Abstract: A method of assembling an electronic device and electronic packages therefrom. A die attach adhesive precursor is placed between a top surface of a workpiece and an IC die. The die attach adhesive precursor includes metal particles, a first plurality of first microcapsules having a polymerizable material inside, and a second plurality of second microcapsules having a polymerization agent inside to form a first polymer upon rupture of first and second microcapsules. A force sufficient to rupture at least a portion of the first plurality of first microcapsules and at least a portion of the second plurality of second microcapsules is applied to form a self-healing die attach adhesive wherein the first polymer binds the plurality of metal particles and the remaining microcapsules and secures the IC die to the top surface of the workpiece. The self-healing die attach adhesive generally includes at least 90 vol. % metal.

Abstract: An integrated circuit chip which has a plurality of pads and non-reflowable contact members to be connected by reflow attachment to external parts. Each of these contact members has a height-to-diameter ratio and uniform diameter favorable for absorbing strain under thermo-mechanical stress. The members have a solderable surface on each end and a layer of reflowable material on each end. Each member is solder-attached at one end to a chip contact pad, while the other end of each member is operable for reflow attachment to external parts.

Abstract: A semiconductor device has a leadframe with a structure made of a base metal (105), wherein the structure consists of a chip mount pad (302) and a plurality of lead segments (303). Covering the base metal are, consecutively, a continuous nickel layer (201) on the base metal, a layer of palladium on the nickel, wherein the palladium layer (203) on the chip side of the structure is thicker than the palladium layer (202) opposite the chip, and a gold layer (204) on the palladium layer (202) opposite the chip. A semiconductor chip (310) is attached to the chip mount pad and conductive connections (312) span from the chip to the lead segments. Polymeric encapsulation compound (320) covers the chip, the connections, and portions of the lead segments, but leaves other segment portions available for solder reflow attachment to external parts.

Abstract: A semiconductor device has a leadframe with a structure made of a base metal (105), wherein the structure consists of a chip mount pad (302) and a plurality of lead segments (303). Covering the base metal are, consecutively, a continuous nickel layer (201) on the base metal, a layer of palladium on the nickel, wherein the palladium layer (203) on the chip side of the structure is thicker than the palladium layer (202) opposite the chip, and a gold layer (204) on the palladium layer (202) opposite the chip. A semiconductor chip (310) is attached to the chip mount pad and conductive connections (312) span from the chip to the lead segments. Polymeric encapsulation compound (320) covers the chip, the connections, and portions of the lead segments, but leaves other segment portions available for solder reflow attachment to external parts.

Abstract: An integrated circuit chip 903, which has a plurality of pads 903b and non-reflowable contact members 1201 to be connected by reflow attachment to external parts. Each of these contact members 1201 has a height-to-diameter ratio and uniform diameter favorable for absorbing strain under thermo-mechanical stress. The members have a solderable surface 1202 on each end and a layer of reflowable material on each end. Each member is solder-attached (1204) at one end to a chip contact pad 903b, while the other end (1203) of each member is operable for reflow attachment to external parts.

Abstract: An integrated circuit chip 501 has a plurality of contact pads (FIG. 5B) to be connected by reflow attachment 510 to outside parts. The chip comprises a deposited layer 505 of nickel/titanium alloy on each of the pads; the alloy has a composition and crystalline structure operable in reversible phase transitions under thermomechanical stress, whereby mechanical strain is absorbed by the alloy layer. Preferably, the alloy has between 55.0 and 56.0 weight % nickel, between 44.0 and 45.0 weight % titanium, and a thickness in the range from 0.3 to 6.0 ?m, recrystallized after deposition in a temperature range from 450 to 600° C. for a time period between 4 and 6 min. A layer 506 of solderable metal is on the alloy, operable as diffusion barrier after reflow attachment.

Abstract: A flexible carrier tape system suitable for transporting and/or storing an electrical component, which has an exposed metal surface sensitive to corrosion. The system comprises a container having a corrosion inhibitor therein, which is capable of reacting with the metal to form a film as an electromechanical barrier against corrosive attack; a component is placed in the container. In the preferred embodiment of the flexible carrier tape system, an elongated base strip has an upper surface and a plurality of longitudinally spaced cavities extending downwardly a predetermined depth from said upper surface for housing electrical components therein. A component in each of the cavities has at least one exposed metal surface sensitive to corrosion. An elongated cover strip for the upper base strip surface has a corrosion inhibitor deposited on that strip surface which faces the cavities.

Abstract: An integrated circuit chip 501 has a plurality of contact pads (FIG. 5B) to be connected by reflow attachment 510 to outside parts. The chip comprises a deposited layer 505 of nickel/titanium alloy on each of the pads; the alloy has a composition and crystalline structure operable in reversible phase transitions under thermomechanical stress, whereby mechanical strain is absorbed by the alloy layer. Preferably, the alloy has between 55.0 and 56.0 weight % nickel, between 44.0 and 45.0 weight % titanium, and a thickness in the range from 0.3 to 6.0 ?m, recrystallized after deposition in a temperature range from 450 to 600° C. for a time period between 4 and 6 min. A layer 506 of solderable metal is on the alloy, operable as diffusion barrier after reflow attachment.

Abstract: A leadframe for use with integrated circuit chips comprising a leadframe base made of aluminum or aluminum alloy having a surface layer of zinc; a first layer of nickel on said zinc layer, said first nickel layer deposited to be compatible with aluminum and zinc; a layer of an alloy of nickel and a noble metal on said first nickel layer; a second layer of nickel on said alloy layer, said second nickel layer deposited to be suitable for lead bending and solder attachment; and an outermost layer of noble metal, whereby said leadframe is suitable for solder attachment to other parts, for wire bonding, and for corrosion protection.

Abstract: A leadframe for use with integrated circuit chips comprising a leadframe base made of aluminum or aluminum alloy having a surface layer of zinc; a first layer of nickel on said zinc layer, said first nickel layer deposited to be compatible with aluminum and zinc; a layer of an alloy of nickel and a noble metal on said first nickel layer; a second layer of nickel on said alloy layer, said second nickel layer deposited to be suitable for lead bending and solder attachment; and an outermost layer of noble metal, whereby said leadframe is suitable for solder attachment to other parts, for wire bonding, and for corrosion protection.

Abstract: An integrated circuit chip 501 has a plurality of contact pads (FIG. 5B) to be connected by reflow attachment 510 to outside parts. The chip comprises a deposited layer 505 of nickel/titanium alloy on each of the pads; the alloy has a composition and crystalline structure operable in reversible phase transitions under thermomechanical stress, whereby mechanical strain is absorbed by the alloy layer. Preferably, the alloy has between 55.0 and 56.0 weight % nickel, between 44.0 and 45.0 weight % titanium, and a thickness in the range from 0.3 to 6.0 &mgr;m, recrystallized after deposition in a temperature range from 450 to 600° C. for a time period between 4 and 6 min. A layer 506 of solderable metal is on the alloy, operable as diffusion barrier after reflow attachment.

Abstract: An integrated circuit chip 903, which has a plurality of pads 903b and non-reflowable contact members 1201 to be connected by reflow attachment to external parts. Each of these contact members 1201 has a height-to-diameter ratio and uniform diameter favorable for absorbing strain under thermo-mechanical stress. The members have a solderable surface 1202 on each end and a layer of reflowable material on each end. Each member is solder-attached (1204) at one end to a chip contact pad 903b, while the other end (1203) of each member is operable for reflow attachment to external parts.

Abstract: A leadframe for use with integrated circuit chips comprising a leadframe base made of aluminum or aluminum alloy having a surface layer of zinc; a first layer of nickel on said zinc layer, said first nickel layer deposited to be compatible with aluminum and zinc; a layer of an alloy of nickel and a noble metal on said first nickel layer; a second layer of nickel on said alloy layer, said second nickel layer deposited to be suitable for lead bending and solder attachment; and an outermost layer of noble metal, whereby said leadframe is suitable for solder attachment to other parts, for wire bonding, and for corrosion protection.

Abstract: A flexible carrier tape system suitable for transporting and/or storing an electrical component, which has an exposed metal surface sensitive to corrosion. The system comprises a container having a corrosion inhibitor therein, which is capable of reacting with the metal to form a film as an electromechanical barrier against corrosive attack; a component is placed in the container.

Abstract: Resistance to corrosion of aluminum metallization on semiconductor devices during wafer sawing process is provided by a sacrificial anode containing magnesium in contact with the integrated circuit wafer and the dicing saw. A relatively thin film or disc of magnesium directly in contact with the surface of the dicing blade makes use of cooling water to serve as the electrolyte between the magnesium and aluminum surfaces, and in turn corrosion is transferred to the magnesium anode in preference to the aluminum of the semiconductor device.