Abstract: An integrated circuit chip 501 has a plurality of contact pads (FIG. 5B) to be connected by reflow attachment 510 to outside parts. The chip comprises a deposited layer 505 of nickel/titanium alloy on each of the pads; the alloy has a composition and crystalline structure operable in reversible phase transitions under thermomechanical stress, whereby mechanical strain is absorbed by the alloy layer. Preferably, the alloy has between 55.0 and 56.0 weight % nickel, between 44.0 and 45.0 weight % titanium, and a thickness in the range from 0.3 to 6.0 &mgr;m, recrystallized after deposition in a temperature range from 450 to 600° C. for a time period between 4 and 6 min. A layer 506 of solderable metal is on the alloy, operable as diffusion barrier after reflow attachment.

Abstract: A leadframe for use with integrated circuit chips comprising a leadframe base made of aluminum or aluminum alloy having a surface layer of zinc; a first layer of nickel on said zinc layer, said first nickel layer deposited to be compatible with aluminum and zinc; a layer of an alloy of nickel and a noble metal on said first nickel layer; a second layer of nickel on said alloy layer, said second nickel layer deposited to be suitable for lead bending and solder attachment; and an outermost layer of noble metal, whereby said leadframe is suitable for solder attachment to other parts, for wire bonding, and for corrosion protection.

Abstract: A leadframe for use with integrated circuit chips, comprising a leadframe base made of aluminum or aluminum alloy having a surface layer of zinc; a first layer of nickel on said zinc layer, said first nickel layer deposited to be compatible with aluminum and zinc; a layer of an alloy of nickel and a noble metal on said first nickel layer; a second layer of nickel on said alloy layer, said second nickel layer deposited to be suitable for lead bending and solder attachment; and an outermost layer of noble metal, whereby said leadframe is suitable for solder attachment to other parts, for wire bonding, and for corrosion protection.

Abstract: Resistance to corrosion of aluminum metallization on semiconductor devices during wafer sawing process is provided by a sacrificial anode containing magnesium in contact with the integrated circuit wafer and the dicing saw. A relatively thin film or disc of magnesium directly in contact with the surface of the dicing blade makes use of cooling water to serve as the electrolyte between the magnesium and aluminum surfaces, and in turn corrosion is transferred to the magnesium anode in preference to the aluminum of the semiconductor device.

Abstract: A leadframe for use with integrated circuit chips comprising a base metal having a plated layer of nickel fully covering the base metal; a plated layer of lead-free solder on the nickel layer, selectively covering areas of the leadframe intended for attachment to other parts; a plated layer of palladium on the nickel layer, selectively covering areas of the leadframe intended for bonding wire attachment, and a plated layer of silver on both the palladium and solder layers, the silver on the solder intended to dissolve completely into the solder upon heating.