Abstract: A method of manufacturing polymer-coated particles is useful for chemical mechanical polishing magnetic, optical, semiconductor or silicon substrates. First it provides a dispersion of particle cores in a non-aqueous solvent. Then introducing a polymeric precursor into the dispersion to react the polymeric precursor forms a polymer. The polymer coats at least a portion of the surface of the particle cores with the polymer and forms the polymer-coated particles having a solid outer polymeric shell. Substituting the non-aqueous solvent with water forms an aqueous mixture containing the polymer-coated particles. And it forms an aqueous chemical mechanical polishing formulation with the polymer-coated particles without drying the polymer-coated particles.

Abstract: The present invention provides an aqueous composition useful for polishing copper interconnects on a semiconductor wafer comprising by weight percent up to 25 oxidizer, 0.05 to 1 inhibitor for a nonferrous metal, 0.01 to 5 complexing agent for the nonferrous metal, 0.01 to 5 modified cellulose, and balance water, wherein the composition is free of polyacrylic acid, the amount of modified cellulose providing a copper removal function and a wafer clear of copper.

Abstract: The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer of acrylic acid and methacrylic acid, and balance water, wherein the copolymer of acrylic acid and methacrylic acid has a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymer has a molecular weight in the range of 1K to 1000K.

Abstract: The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.

Abstract: The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.

Abstract: The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 10 ppb to 4 weight percent complexing agent, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

Abstract: The polishing composition is suitable for chemical mechanical polishing magnetic, optical, semiconductor or silicon substrates. The polishing composition includes abrasive particles in a liquid media. The abrasive particles have a particle core, the particle core having a hardness and a polymeric shell physisorbed to and encapsulating the particle core. The polymeric shell has a solid structure and a hardness lower than the hardness of the particle core. The abrasive particles have an average particle size of less than or equal to about 2 micrometers dispersed in the liquid media.

Abstract: The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing solution comprises 0.001 to 2 wt % of a polyvinylalcohol copolymer, the polyvinylalcohol copolymer having a first component, a second component and a weight average molecular weight of 1,000 to 1,000,000 grams/mole, and the first component being 50 to 95 mole percent vinyl alcohol and the second component being more hydrophobic than the vinyl alcohol and 0.05 to 50 wt % silica abrasive particles; and the composition having a pH of 8 to 12.

Abstract: An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.

Abstract: The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, inhibitor for reducing removal rate of the nonferrous interconnect metals, ammonium salt, 0.1 to 50 weight percent silica containing 0.001 to 1 ppm sodium and 0.001 to 1 ppm potassium, and balance water; and the solution having a pH of less than 3 with an inorganic acid used as a titrant.

Abstract: An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed with R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4 and SiCO.

Abstract: The polishing composition is suitable for chemical mechanical polishing magnetic, optical, semiconductor or silicon substrates. The polishing composition includes abrasive particles in a liquid media. The abrasive particles have a particle core, the particle core having a hardness and a polymeric shell physisorbed to and encapsulating the particle core. The polymeric shell has a solid structure and a hardness lower than the hardness of the particle core. The abrasive particles have an average particle size of less than or equal to about 2 micrometers dispersed in the liquid media.

Abstract: A method of manufacturing polymer-coated particles is useful for chemical mechanical polishing magnetic, optical, semiconductor or silicon substrates. First it provides a dispersion of particle cores in a non-aqueous solvent. Then introducing a polymeric precursor into the dispersion to react the polymeric precursor forms a polymer. The polymer coats at least a portion of the surface of the particle cores with the polymer and forms the polymer-coated particles having a solid outer polymeric shell. Substituting the non-aqueous solvent with water forms an aqueous mixture containing the polymer-coated particles. And it forms an aqueous chemical mechanical polishing formulation with the polymer-coated particles without drying the polymer-coated particles.

Abstract: The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.

Abstract: The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer of acrylic acid and methacrylic acid, and balance water, wherein the copolymer of acrylic acid and methacrylic acid has a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymer has a molecular weight in the range of 1K to 1000K.

Abstract: An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.

Abstract: The present invention provides a multi-step aqueous composition useful for polishing a tantalum barrier material and copper from a semiconductor wafer, comprising by weight percent 0.1 to 30 oxidizer, 0.01 to 3 inorganic salt or acid, 0.01 to 4 inhibitor, 0.1 to 30 abrasive, 0 to 15 complexing agent and balance water, wherein the aqueous composition has a pH between 1.5 to 6.

Abstract: The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 10 ppb to 4 weight percent complexing agent, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

Abstract: The present invention provides an aqueous composition useful for polishing copper interconnects on a semiconductor wafer comprising by weight percent up to 25 oxidizer, 0.05 to 1 inhibitor for a nonferrous metal, 0.01 to 5 complexing agent for the nonferrous metal, 0.01 to 5 modified cellulose, and balance water, wherein the composition is free of polyacrylic acid, the amount of modified cellulose providing a copper removal function and a wafer clear of copper.

Abstract: The present invention provides a multi-step aqueous composition useful for polishing a tantalum barrier material and copper from a semiconductor wafer, comprising by weight percent 0.1 to 30 oxidizer, 0.01 to 3 inorganic salt or acid, 0.01 to 4 inhibitor, 0.1 to 30 abrasive, 0 to 15 complexing agent and balance water, wherein the aqueous composition has a pH between 1.5 to 6.