Abstract: A polishing composition suitable for polishing semiconductor substrates comprises 0.001 to 2 wt % of a thermoplastic polymer; and 0.001 to 1 wt % of polyvinylpyrrolidone; wherein varying the weight ratio of thermoplastic polymer to the polyvinylpyrrolidone controls the removal rate of the non-ferrous interconnect.

Abstract: An aqueous slurry is useful for chemical mechanical planarizing a semiconductor substrate. The slurry includes by weight percent, 0.1 to 25 oxidizing agent, 0.1 to 20 silica particles having an average particle size of less than 200 nm, 0.005 to 0.8 polyvinyl pyrrolidone for coating the silica particles, 0.01 to 10 inhibitor, 0.001 to 10 complexing agent and a balance water and incidental impurities; and the aqueous slurry having a pH of at least 7.

Abstract: The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer comprising by weight percent 0.001 to 6 inhibitor for a nonferrous metal, 0.05 to 10 complexing agent for the metal, 0.01 to 25 copper removal agent for accelerating the removal of the copper, 0.5 to 40 abrasive, 0 to 10 selected from the group comprising, polyvinylpyrrolidone, thermoplastic polymer and mixtures thereof, wherein the copper removal agent is imidazole.

Abstract: The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer at a down force pressure of at least less than 20.68 kPa, comprising by weight percent 1 to 15 oxidizer, 0.1 to 1 inhibitor for a nonferrous metal, 0.05 to 3 complexing agent for the nonferrous metal, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 modified cellulose, 0.05 to 10 phosphorus-containing compound and 0 to 10 abrasive, wherein the phosphorus-containing compound increases removal of the copper.

Abstract: The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.

Abstract: An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.

Abstract: A particle-free polishing fluid for planarizing nickel or nickel-alloy coating on substrates is disclosed. The particle-free polishing fluid contains at least one oxidizing agent, or mixtures thereof. The particle-free polishing fluid may also contain an accelerating agent and/or a complexing agent. Surface roughnesses of less than about 1.51 ? are possible when polishing magnetic disks with the particle-free polishing fluid in a final step polishing process.

Abstract: An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed with R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4 and SiCO.

Abstract: A slurry composition for planarizing nickel or nickel-alloy coating on substrates, such as a nickel coating on a memory hard disk, includes at least two oxidizers, an abrasive, water, and no metal catalyst. The composition is effective for polishing nickel (Ni) and nickel alloys coatings formed in the manufacture of memory disks.

Abstract: An aqueous slurry is useful for chemical mechanical planarizing a semiconductor substrate. The slurry includes by weight percent, 0.1 to 25 oxidizing agent, 0.1 to 20 silica particles having an average particle size of less than 200 nm, 0.005 to 0.8 polyvinyl pyrrolidone for coating the silica particles, 0.01 to 10 inhibitor, 0.001 to 10 complexing agent and a balance water and incidental impurities; and the aqueous slurry having a pH of at least 7.

Abstract: A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammonium hydroxide may also be added to the polishing composition.

Abstract: A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammonium hydroxide may also be added to the polishing composition.