Abstract: A method for making a semiconductor device may include forming a superlattice adjacent a semiconductor layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one non-semiconductor monolayer in a first group of layers of the superlattice may comprise oxygen and be devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice may comprise carbon.

Abstract: A wellbore tubular flotation device comprises a housing having a locking element disposed thereon. The housing is shaped to move through an interior of a wellbore tubular segment. The locking element is shaped to engage the interior of the wellbore tubular segment. The locking element comprises a locking mechanism configured to urge the locking element into contact with the interior of the wellbore tubular. A burst disk is engaged with the housing and is shaped to close the tubular segment to fluid flow. A release mechanism is configured to reverse the urging of the locking mechanism when a release tool is moved through the housing.

Abstract: A method for making a semiconductor gate-all-around (GAA) device may include forming source and drain regions on a semiconductor substrate, forming a plurality of semiconductor nanostructures extending between the source and drain regions, and forming a gate surrounding the plurality of semiconductor nanostructures in a gate-all-around arrangement. Furthermore, the method may include forming at least one superlattice may be within at least one of the nanostructures. The at least one superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

Abstract: A headgear system and/or an interface assembly incorporating a headgear system that, in some configurations, is configured to transform from elasticated or “stretchy” behavior to “inelastic” behavior at least in response to normal or expected forces encountered during the intended therapy. In some configurations, upon fitment to the head of a user, the system automatically adjusts toward or to an appropriate size. A headgear portion or assembly for use in combination with a breathing apparatus in some configurations is at least substantially inelastic and is three dimensional in shape. The headgear portion or assembly can comprise a plastic core and a textile casing. The headgear, or part thereof, may also have integrally moulded labels, connectors, adjustment mechanisms and/or grips.

Abstract: Patient interface components and/or associated head gear and adjustment systems improve sealing and/or patient comfort and/or ease of use. The interface includes an inflating or ballooning seal. The headgear assembly can be connected to the interface with an elastic component and an inelastic component. The elastic component enabling a course fitting of the interface to the patient and the inelastic component enabling a final fitting of the interface to the patient.

Abstract: A method for making a semiconductor device may include forming a superlattice adjacent a semiconductor layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one non-semiconductor monolayer in a first group of layers of the superlattice may comprise oxygen and be devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice may comprise carbon.

Abstract: A respiratory mask can include one or a plurality of force sensors configured to detect a force imparted to a user's skin. Output from the one or more sensors can be represented in a way useful to the patient or healthcare provider for adjusting the mask to achieve a desired fitment. A representation of the detected forces can be displayed on a separate display device or on the mask.

Abstract: A headgear system and/or an interface assembly incorporating a headgear system that, in some configurations, is configured to transform from elasticated or “stretchy” behavior to “inelastic” behavior at least in response to normal or expected forces encountered during the intended therapy. In some configurations, upon fitment to the head of a user, the system automatically adjusts toward or to an appropriate size. A headgear portion or assembly for use in combination with a breathing apparatus in some configurations is at least substantially inelastic and is three dimensional in shape. The headgear portion or assembly can comprise a plastic core and a textile casing. The headgear, or part thereof, may also have integrally moulded labels, connectors, adjustment mechanisms and/or grips.

Abstract: A seat carrier subassembly for a valve includes first and second ring components assembled over an O-ring seal, wherein a portion of the O-ring seal is exposed in an inner diameter gap between inner edge portions of the first and second ring components to define a seat seal.

Abstract: A semiconductor gate-all-around (GAA) device may include a semiconductor substrate, source and drain regions on the semiconductor substrate, a plurality of semiconductor nanostructures extending between the source and drain regions, and a gate surrounding the plurality of semiconductor nanostructures in a gate-all-around arrangement. Furthermore, at least one superlattice may be within at least one of the nanostructures. The at least one superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

Abstract: A semiconductor gate-all-around (GAA) device may include a semiconductor substrate, source and drain regions on the semiconductor substrate, a plurality of semiconductor nanostructures extending between the source and drain regions, and a gate surrounding the plurality of semiconductor nanostructures in a gate-all-around arrangement. Furthermore, at least one superlattice may be within at least one of the nanostructures. The at least one superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

Abstract: A wellbore tubular flotation device comprises a housing having a locking element disposed thereon. The housing is shaped to move through an interior of a wellbore tubular segment. The locking element is shaped to engage the interior of the wellbore tubular segment. The locking element comprises a locking mechanism configured to urge the locking element into contact with the interior of the wellbore tubular. A burst disk is engaged with the housing and is shaped to close the tubular segment to fluid flow. A release mechanism is configured to reverse the urging of the locking mechanism when a release tool is moved through the housing.

Abstract: A method for making a semiconductor device may include forming a superlattice adjacent a semiconductor layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one non-semiconductor monolayer in a first group of layers of the superlattice may comprise oxygen and be devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice may comprise carbon.

Abstract: A method for making a semiconductor device may include forming a superlattice adjacent a semiconductor layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one non-semiconductor monolayer in a first group of layers of the superlattice may comprise oxygen and be devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice may comprise carbon.

Abstract: A semiconductor device may include a semiconductor layer and a superlattice adjacent the semiconductor layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one non-semiconductor monolayer in a first group of layers of the superlattice may comprise oxygen and be devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice may comprise carbon.

Abstract: A wellbore tubular flotation device comprises a housing having a locking element disposed thereon. The housing is shaped to move through an interior of a wellbore tubular segment. The locking element is shaped to engage the interior of the wellbore tubular segment. The locking element comprises a locking mechanism configured to urge the locking element into contact with the interior of the wellbore tubular. A burst disk is engaged with the housing and is shaped to close the tubular segment to fluid flow. A release mechanism is configured to reverse the urging of the locking mechanism when a release tool is moved through the housing.

Abstract: A vertical semiconductor device may include a semiconductor substrate having at least one trench therein, and a superlattice layer extending vertically adjacent the at least one trench. The superlattice layer may comprise stacked groups of layers, with each group of layers comprising stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer. Each at least one non-semiconductor monolayer of each group of layers may be constrained within a crystal lattice of adjacent base semiconductor portions. The vertical semiconductor device may also include a doped semiconductor layer adjacent the superlattice layer, and a conductive body adjacent the doped semiconductor layer on a side thereof opposite the superlattice layer and defining a vertical semiconductor device contact.

Abstract: A method for making a semiconductor device may include forming an inverted T channel on a substrate, with the inverted T channel comprising a superlattice. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming source and drain regions on opposing ends of the inverted T channel, and forming a gate overlying the inverted T channel between the source and drain.

Abstract: A semiconductor gate-all-around (GAA) device may include a semiconductor substrate, source and drain regions on the semiconductor substrate, a plurality of semiconductor nanostructures extending between the source and drain regions, and a gate surrounding the plurality of semiconductor nanostructures in a gate-all-around arrangement. Furthermore, at least one superlattice may be within at least one of the nanostructures. The at least one superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

Abstract: A method for making a semiconductor gate-all-around (GAA) device may include forming source and drain regions on a semiconductor substrate, forming a plurality of semiconductor nanostructures extending between the source and drain regions, and forming a gate surrounding the plurality of semiconductor nanostructures in a gate-all-around arrangement. Furthermore, the method may include forming at least one superlattice may be within at least one of the nanostructures. The at least one superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.