Abstract: Systems and methods are provided for storing a first data object comprising a first set of immutable components, the first data object being associated with a corresponding second data object stored by a remote replication system. A difference is determined between the first set of immutable components of the first data object and a second set of immutable components of the corresponding second data object. A subset of immutable components is identified from the first set of immutable components based on the difference. The subset of immutable components from the first set of immutable components is provided to the remote replication system over a communication network.

Abstract: An apparatus for the production of nanoparticles is provided. The apparatus includes a main tube that is closed at a bottom, an inlet channel arranged within the main tube and includes a first opening to the outside of the apparatus and a second opening to the main tube, and a main opening in the main tube. The main tube includes a sample position at the bottom, the cross section of the main tube at the sample position is smaller than at other positions of the main tube, and the second opening of the inlet channel is arranged closer to the sample position than the main opening. Furthermore, an arrangement for the production of nanoparticles and a method for producing nanoparticles are provided.

Abstract: In order to determine contour edges within a provided image, a plurality of image cells (e.g., groupings of pixels) are created within the image. For each image cell, a numerical value for each of the pixels is compared to a predetermined threshold value to determine comparison values for each pixel. A total numerical value for each image cell may then be determined utilizing the comparison values and numerical values for each pixel within each image cell. An associated contour cell (indicating present contour edges) is then determined for each image cell by comparing the total numerical value for the image cell to a contour cell index. These operations may be performed in parallel by a graphics processing unit (GPU) for each image cell, which may improve a performance of contour edge determination for the image. The stitching of contour edges may also be performed using the GPU, which may provide additional performance improvements for image contour extraction.

Abstract: A thermodenuder having a main tube with an outer wall, and a heater (23) arranged within the main tube. The heater is arranged in the center of a cross section through the main tube and is spaced apart from the outer wall of the main tube. The main tube has a main axis of extension, and the heater extends parallel to the main axis. The main tube has two openings that are arranged at opposing side faces of the main tube. A channel for an aerosol is arranged within the main tube between the heater and the outer wall and between the two openings. Furthermore, a method for removing semi-volatile material and semi-volatile particles from an aerosol is provided.

Abstract: Embodiments of the present disclosure are directed to polymer blends comprising greater than or equal to 55 wt % and less than or equal to 90 wt % of an aliphatic polyketone; and greater than or equal to 10 wt % and less than or equal to 40 wt % of an acrylonitrile butadiene styrene (ABS), wherein the aliphatic polyketone has a melt flow rate greater than or equal to 1 g/10 min and less than or equal to 90 g/10 min as measured in accordance with ASTM D1238 at 240° C. and a weight of 2.16 kg.

Abstract: Embodiments of the present disclosure are directed to polymer blends comprising greater than or equal to 45 wt % and less than or equal to 90 wt % of an aliphatic polyketone; greater than or equal to 7.5 wt % and less than or equal to 40 wt % of an acrylonitrile butadiene styrene (ABS); and greater than 0 wt % and less than or equal to 25 wt % of a flame retardant.

Abstract: Embodiments of the present disclosure are directed to polymer blends comprising greater than or equal to 30 wt % and less than or equal to 88.5 wt % of a polyamide; greater than or equal to 4 wt % and less than or equal to 50 wt % of an aliphatic polyketone; and greater than or equal to 7.5 wt % and less than or equal to 20 wt % of a rubber impact modifier.

Abstract: A method comprising identifying a set of target features for a plurality of data instances of an input data collection; determining feature values for the set of target features for the plurality of data instances; identifying a plurality of outlier data instances based on the determined feature values; identifying a plurality of noisy data instances from the outlier data instances based on feature values of the plurality of noisy data instances, wherein a noisy data instance is identified based on a determination that noise is present in noisy data instance; and providing an indication of the plurality of noisy data instances.

Abstract: Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

Abstract: A method includes identifying a first geometric pattern that failed a design rule check, identifying a second geometric pattern that passed the design rule check, morphing the first geometric pattern based on the second geometric pattern to generate a morphed geometric pattern, wherein the morphed geometric pattern passes the design rule check, and replacing the first geometric pattern with the morphed geometric pattern.

Abstract: Images are accessed representing a status in a fabrication of a semiconductor chip corresponding to a particular stage in the fabrication. Distortion is removed from the images and actual features of the semiconductor chip are extracted from the images. Synthesized ideal features of the semiconductor chip associated with completion of the particular stage in the fabrication are determined from the one or more images. The actual features are compared to the ideal features to determine whether anomalies associated with the particular stage exist in the semiconductor chip.

Abstract: Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

Abstract: A thermodenuder having a main tube with an outer wall, and a heater (23) arranged within the main tube. The heater is arranged in the center of a cross section through the main tube and is spaced apart from the outer wall of the main tube. The main tube has a main axis of extension, and the heater extends parallel to the main axis. The main tube has two openings that are arranged at opposing side faces of the main tube. A channel for an aerosol is arranged within the main tube between the heater and the outer wall and between the two openings. Furthermore, a method for removing semi-volatile material and semi-volatile particles from an aerosol is provided.

Abstract: Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

Abstract: A search engine receives data describing reference geometry and generates a hash based on the reference geometry. A reference bloom filter is generated for the reference geometry based on the hash. The search engine performs a search to determine whether instances of the reference geometry are present in an integrated circuit (IC) layout. The search includes comparing the reference bloom filter with each one of a plurality of bloom filters corresponding to a plurality of subdomains of the IC layout. Based on results of the comparison, one or more subdomains of interest are identified and searched to determine whether the particular reference geometry is present in the subdomain.

Abstract: Photoresponsive polymers that comprise a unit derived from an amide functional diol compound that includes a coumarin group are provided. Advantageously, the photoresponsive groups of the photoresponsive polymers may be used to control the viscosity of the photoresponsive polymer. The photoresponsize polymers may also include units derived from amide functional diol compounds with include a fatty acid chain or a polyethylene glycol chain. The photoresponsive polymers may be used for 3d printing. When an adhesive group is added to a photoresponsive polymer they may be used as an adhesive. Adhesive groups include catechol groups.

Abstract: An improved random forest model is provided, which has been trained based on silicon data generated from tests of previously fabricated chips. An input is provided to the random forest model, the input including a feature set of a pattern within a particular chip layout, the feature set identifying geometric attributes of polygonal elements within the pattern. A result is generated by the random forest model based on the input, where the result identifies a predicted attribute of the pattern based on the silicon data, and the result is generated based at least in part on determining, within the random forest model, that geometric attributes of the pattern were included in the previously fabricated chips, where the previously fabricated chips have chip layouts are different from the particular chip layout.

Abstract: A machine readable storage medium, a method and an apparatus. The method comprises selecting a candidate set of parameters from a plurality of available parameters comprising variables that affect an outcome of a lithography process; performing a set of optimizations wherein each optimization of the set of optimizations is subject to a plurality of objectives and tolerances and a set of constraints, wherein performance of said each optimization comprises: modifying values of at least a portion of the candidate set of parameters to derive a predicted outcome for said each optimization; and determining whether a difference between the predicted outcome and an intended outcome is within an error threshold; and if the difference exceeds the error threshold, perform a subsequent optimization, and otherwise generate an input file including modified values, corresponding to a last one of the set of optimizations, for the at least a portion of the candidate set of parameters.

Abstract: An apparatus for the production of nanoparticles is provided. The apparatus includes a main tube that is closed at a bottom, an inlet channel arranged within the main tube and includes a first opening to the outside of the apparatus and a second opening to the main tube, and a main opening in the main tube. The main tube includes a sample position at the bottom, the cross section of the main tube at the sample position is smaller than at other positions of the main tube, and the second opening of the inlet channel is arranged closer to the sample position than the main opening. Furthermore, an arrangement for the production of nanoparticles and a method for producing nanoparticles are provided.

Abstract: Upon use of an immersion tin plating solution, contaminants build in the solution, which cause the plating rate and the quality of the plated deposit to decrease. One primary contaminant, which builds in the plating solution upon use, is hydrogen sulfide, H2S. If a gas is bubbled or blown through the solution, contaminants, especially hydrogen sulfide, can be effectively removed from the solution and, as a result, the high plating rate and plate quality can be restored or maintained. In this regard, any gas can be used, however, it is preferable to use a gas that will not detrimentally interact with the solution, other than to strip out contaminants. Nitrogen is particularly preferred for this purpose because it is efficient at stripping out contaminants, including hydrogen sulfide, but does not induce the oxidation of the tin ions from their divalent state to the tetravalent state, which is detrimental.