Abstract: A method for is provided forming a thin-film transistor (TFT) on a flexible substrate. The method comprises: supplying a metal foil substrate such as titanium (Ti), Inconel alloy, stainless steel, or Kovar, having a thickness in the range of 10 to 500 microns; depositing and annealing amorphous silicon to form polycrystalline silicon; and, thermally growing a gate insulation film overlying the polycrystalline. The silicon annealing process can be conducted at a temperature greater than 700 degrees C. using a solid-phase crystallization (SPC) annealing process. Thermally growing a gate insulation film includes: forming a polycrystalline silicon layer having a thickness in the range of 10 to 100 nanometers (nm); and, thermally oxidizing the film at temperature in the range of 900 to 1150 degrees for a period of time in the range of 2 to 60 minutes. Alternately, a plasma oxide layer is deposited over a thinner thermally oxidized layer.

Abstract: A method is provided for fabricating a thin film oxide. The method include forming a first silicon layer, applying a second silicon layer overlying the first silicon layer, oxidizing the second silicon layer at a temperature of less than 400° C. using an inductively coupled plasma source, and forming a thin film oxide layer overlying the first silicon layer. In some cases, the thin film oxide layer overlies the oxidized second silicon layer and is formed by a high-density plasma enhanced chemical vapor deposition process and an inductively coupled plasma source at a temperature of less than 400° C. In some cases, the thin film oxide layer and the first silicon layer are incorporated into a thin film transistor and the thin film oxide layer has a fixed oxide charge density of 3×1011 per square centimeter.

Abstract: A method for is provided forming a thin-film transistor (TFT) on a flexible substrate. The method comprises: supplying a metal foil substrate such as titanium (Ti), Inconel alloy, stainless steel, or Kovar, having a thickness in the range of 10 to 500 microns; depositing and annealing amorphous silicon to form polycrystalline silicon; and, thermally growing a gate insulation film overlying the polycrystalline. The silicon annealing process can be conducted at a temperature greater than 700 degrees C. using a solid-phase crystallization (SPC) annealing process. Thermally growing a gate insulation film includes: forming a polycrystalline silicon layer having a thickness in the range of 10 to 100 nanometers (nm); and, thermally oxidizing the film at temperature in the range of 900 to 1150 degrees for a period of time in the range of 2 to 60 minutes. Alternately, a plasma oxide layer is deposited over a thinner thermally oxidized layer.

Abstract: Monolithic stacked/layered room-temperature-processed materials whose internal crystalline structures are laser modification to create arrays of mechanical, and combined mechanical and electrical, devices with precision-established properties, such as important mechanical properties. Methodology and system configurations are disclosed.

Abstract: Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, semiconductor mechanical devices. Processing is laser performed on selected semiconductor material whose internal crystalline structure becomes appropriately changed to establish the desired mechanical properties for a created device.

Abstract: Laser processing of various materials to create mechanical devices whose internal mechanical properties are provided in final useable form by adjustments made in internal crystalline structure.

Abstract: Monolithic integrated crystalline-structure-processed arrays of mechanical, and combined mechanical and electrical devices, and related systems and processing methods.

Abstract: Thin-film laser-effected internal crystalline structure modified materials suitable for the creation of various small-dimension mechanical devices, either singly or in monolithic arrays, such as MEMS devices. Processing is carried out at room temperature and atmospheric pressure.

Abstract: Room-temperature formation of laser-produced mechanical, and combined mechanical and electrical, devices on low-temperature substrates, such as glass, quartz, plastic, flex material, metal foil, material, and fabric (textile) substrate.

Abstract: A 1:1 laser projection system and method are provided for laser irradiating a semiconductor film. The method comprises: exposing a mask to a beam of laser light; projecting laser light passed through the mask by a factor of one; exposing the area of a semiconductor film to the projected laser light having a first energy density; exposing an area of semiconductor film to a lamp light having a second energy density; and, summing the first and second energy densities to heat the area of film. When the semiconductor film is silicon, the film heating typically entails melting, and then, crystallizing the film. In some aspects of the method, the lamp is an excimer lamp having a wavelength of less than 550 nanometers (nm), and the laser is an excimer laser having a wavelength of less than 550 nm. In some aspects, the lamp is mounted to expose the bottom surface of the film including an area underlying the area being laser irradiated.

Abstract: A method is provided to optimize the channel characteristics of thin film transistors (TFTs) on polysilicon films. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices. Regions of polycrystalline silicon can be formed with different predominant crystal orientations. These crystal orientations can be selected to match the desired TFT channel orientations for different areas of the device. The crystal orientations are selected by rotating a mask pattern to a different orientation for each desired crystal orientation. The mask is used in connection with lateral crystallization ELA processes to crystallize deposited amorphous silicon films.

Abstract: A method is provided to optimize the channel characteristics of thin film transistors (TFTs) on polysilicon films. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices. The method is also well suited to the production of other devices using polysilicon films. Regions of polycrystalline silicon can be formed with different predominant crystal orientations. These crystal orientations can be selected to match the desired TFT channel orientations for different areas of the device. The crystal orientations are selected by selecting different mask patterns for each of the desired crystal orientation. The mask patterns are used in connection with lateral crystallization ELA processes to crystallize deposited amorphous silicon films.

Abstract: A method is provided to optimize the channel characteristics of thin film transistors (TFTs) on polysilicon films. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices. Regions of polycrystalline silicon can be formed with different predominant crystal orientations. These crystal orientations can be selected to match the desired TFT channel orientations for different areas of the device. The crystal orientations are selected by rotating a mask pattern to a different orientation for each desired crystal orientation. The mask is used in connection with lateral crystallization ELA processes to crystallize deposited amorphous silicon films.

Abstract: A method is provided to optimize the channel characteristics of thin film transistors (TFTs) on polysilicon films. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices. Regions of polycrystalline silicon can be formed with different predominant crystal orientations. These crystal orientations can be selected to match the desired TFT channel orientations for different areas of the device. The crystal orientations are selected by rotating a mask pattern to a different orientation for each desired crystal orientation. The mask is used in connection with lateral crystallization ELA processes to crystallize deposited amorphous silicon films.

Abstract: A method is provided to optimize the channel characteristics of thin film transistors (TFTs) on polysilicon films. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices. Regions of polycrystalline silicon can be formed with different predominant crystal orientations. These crystal orientations can be selected to match the desired TFT channel orientations for different areas of the device. The crystal orientations are selected by rotating a mask pattern to a different orientation for each desired crystal orientation. The mask is used in connection with lateral crystallization ELA processes to crystallize deposited amorphous silicon films.

Abstract: A method is provided to optimize the channel characteristics of thin film transistors (TFTs) on polysilicon films. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices. The method is also well suited to the production of other devices using polysilicon films. Regions of polycrystalline silicon can be formed with different predominant crystal orientations. These crystal orientations can be selected to match the desired TFT channel orientations for different areas of the device. The crystal orientations are selected by selecting different mask patterns for each of the desired crystal orientation. The mask patterns are used in connection with lateral crystallization ELA processes to crystallize deposited amorphous silicon films.