Abstract: The invention relates to word line drivers found in embedded dynamic random access memories (DRAM) of application specific integrated circuits (ASICs). The invention is a method of programming the time at which the boosted voltage interval begins, and the period during which the boosted voltage is maintained. The result is the ability to apply the boosted voltage only when needed, thus minimizing the danger to the oxide integrity. The method comprises initiating an active row cycle in response to a leading edge of a row activation signal, initiating a precharge cycle in response to a trailing edge of the row activation signal, the precharge cycle comprising a broad line boost interval initiated by the falling edge of the row activation signal and having a predetermined duration controlled by a programmable delay circuit.

Abstract: This invention describes a column redundancy method and apparatus in a DRAM that minimizes the timing difference between a normal and redundant column paths and which minimizes the number of fuses required in repairing faulty columns. The invention discloses a DRAM having memory elements arranged in rows and columns, the memory elements being accessible by decoding a memory address applied thereto, normal column drivers for energizing appropriate memory columns in response to the decoder memory addresses received at an input thereof; redundant column drivers; and switch means for steering the decoded memory address onto one of either normal or redundant column driver paths. The invention further illustrates a fusing system which minimizes the capacitance of redundant select lines, thereby removing unnecessary delay in the redundant column path.

Abstract: A method of driving a DRAM word line comprising initiating a word line active cycle from a leading edge of a row enable signal, applying a first voltage to a word line following and as a result of said leading edge, receiving a trailing edge of the enable signal and applying a boosted voltage to the word line following and as a result of the trailing edge.

Abstract: This invention describes an addressing and data access method and apparatus which can make use of maximum sized, binary configured blocks of memory or macro cells. The binary sized blocks of memory may be used to implement a non-binary sized overall memory circuit. The apparatus as described makes efficient use of silicon area by combining an optimized number of memory blocks or macro cells having at least two data port per macro cell to implement a non-binary sized memory circuit.

Abstract: A method of driving a DRAM word line comprising initiating a word line active cycle from a leading edge of a row enable signal, applying a first voltage to a word line following and as a result of said leading edge, receiving a trailing edge of the enable signal and applying a boosted voltage to the word line following and as a result of the trailing edge.

Abstract: An electric lock for children's automobiles including a base having a corrugated annular member engaged with three terminals, a cover engaged with a top of the base and formed with a first keyhole, a spring mounted under the cover, a driving disk mounted under the spring and having a second keyhole aligned with the first keyhole of the cover, a cylindrical portion at a bottom thereof, and two pins downwardly depending from the cylindrical portion, and a conducting plate arranged under the driving disk and having a third keyhole aligned with second keyhole of the driving disk, a first corrugated portion with a plurality of wavelike folds engaged with the corrugated annular member, and a second corrugated portion with a single wavelike fold engaged with the corrugated annular member, and a power connector for connecting with a power source and a controller.