Abstract: An MTJ cell includes a first metal layer elongated in the X-direction; a second metal layer separated from the first metal layer and elongated in the Y-direction; a magnetic tunnel junction (MTJ) interposed between the overlapping parts of the first and second metal layers and having extended parts not covered by the second metal layer, the MTJ including a pinned layer, a barrier layer, and a storage layer sequentially laminated; and a yoke spanning across the second metal layer, with both ends in the X-direction contacting the top surface of the extended parts of the storage layer not covered by the second metal layer, either directly or through an insulator. The planar shapes of the MTJ and the yoke possess a quantum easy axis in the X-direction and Y-direction, respectively.

Abstract: There is provided a magnetic memory device capable of reading information even with a lower power supply voltage. The magnetic memory device is equipped with a plurality of storage cells laid out in two dimensions in (i+1) rows and (j+1) columns (where i, j are integers of one or higher). Two magnetoresistive effect revealing bodies 2a, 2b are disposed in each of the storage cells 1, and each storage cell includes: a first stage circuit 41 that supplies currents Ib1, Ib2 for detecting resistances of magnetoresistive effect revealing bodies 2a, 2b; an X-direction address decoder circuit 32 that supplies currents Iw1, Iw2 to the magnetoresistive effect revealing bodies 2a, 2b; and a current control circuit (constant current circuit 25n) that carries out control so that the total of the current Ib1 and the current Iw1 and the total of the current Iw2 and the current Ib2 are respectively constant.

Abstract: There is provided a magnetic memory device capable of reading information even with a lower power supply voltage. The magnetic memory device is equipped with a plurality of storage cells laid out in two dimensions in (i+1) rows and (j+1) columns (where i, j are integers of one or higher). Two magnetoresistive effect revealing bodies 2a, 2b are disposed in each of the storage cells 1, and each storage cell includes: a first stage circuit 41 that supplies currents Ib1, Ib2 for detecting resistances of magnetoresistive effect revealing bodies 2a, 2b; an X-direction address decoder circuit 32 that supplies currents Iw1, Iw2 to the magnetoresistive effect revealing bodies 2a, 2b; and a current control circuit (constant current circuit 25n) that carries out control so that the total of the current Ib1 and the current Iw1 and the total of the current Iw2 and the current Ib2 are respectively constant.

Abstract: A magnetic storage cell being capable of stable writing and having little adverse influence on an adjacent magnetic storage cell, and a magnetic memory device using the magnetic storage cell, and its manufacturing method are provided. In the invention, a plurality of TMR devices (1a) (1b) each including a TMR film (S20) including a connecting portion (14) of which the magnetization direction is changed by an external magnetic field and a second magnetic layer (8) and allowing a current to flow therethrough in a direction perpendicular to a laminate surface, and a toroidal magnetic layer (4) disposed on a surface of the TMR film (S20) so that a direction along the laminate surface is an axial direction and a write bit line (5) and a write word line (6) penetrate through the toroidal magnetic layer (4) are included, and the TMR devices (1a), (1b) share a part of the toroidal magnetic layer (4) between them.

Abstract: A magnetic memory device which can be formed with a further reduced size. The magnetic memory device includes: a plurality of memory cells each including at least one magnetoresistive effect revealing body and arranged along a pair of lines; a plurality of auxiliary write lines arranged so that each memory cell is provided with one auxiliary write line, each auxiliary write line being connected to the pair of lines, for introducing write currents flowing through the pair of lines to the vicinity of the magnetoresistive effect revealing body; and transistors arranged so that one transistor is inserted in each auxiliary write line, for allowing the write current to flow bidirectionally through the auxiliary write line in an operating state of the transistors.

Abstract: A magnetic memory device includes a plurality of storage cells disposed in two dimensions, read lines that supply a read current for reading information from a first power supply to the respective storage cells, and a second power supply that is connected to at least some of the read lines and applies an intermediate voltage, which is lower than the voltage supplied by the first power supply, to the connected read lines.

Abstract: The number of write circuit components, variations in a write current flowing through each write line, and the power consumption for write operation can be reduced. A first constant current circuit and a second constant current circuit (a transistor (Q8) and a resistor (R4), and a transistor (Q7) and a resistor (R3)) are shared among a plurality of current direction control portions (54n?1, 54n, 54n+1, . . . ). The constant current circuits are connected to each current direction control portion (54) through a first circuit selector switch (SW1 . . . , SW1n, SW1n+1, . . . ) and a second circuit selector switch (SW2 . . . , SW2n, SW2n+1, . . . ) disposed for each current direction control portion (54). Moreover, a decode signal voltage is applied to the constant current circuits from a word decode line (16X) (bit decode line (16Y)) through the circuit selector switches (SW1) and (SW2).

Abstract: The present invention provides a magnetic memory device capable of reducing a loss of a magnetic field generated by currents flowing in a write line and performing writing stably, and a magnetic memory cell mounted on the magnetic memory device. Further, the invention provides a method for easily manufacturing such a magnetic memory device. A magnetic memory cell includes: stacked bodies each including a magneto-sensitive layer whose magnetization direction changes according to an external magnetic field, and constructed so that current flows in a direction perpendicular to a stack layer surface; and a toroidal magnetic layer disposed between the first and second stacked bodies so that the direction along the stack layer surface is set as an axial direction, and constructed so as to be penetrated by a plurality of conductors along the axial direction.

Abstract: A magnetic memory device and a sense amplifier circuit capable of obtaining a read signal output with a high S/N ratio and reducing power consumption and a circuit space, and a method of reading from a magnetic memory device are provided. In a sense amplifier, transistors (41A), (41B) which are differential amplifiers are commonly connected to one constant current circuit (50) through switches (46) ( . . . , 46n, 46n+1, . . . ). Corresponding bit decode lines (20) ( . . . , 20n, 20n+1, . . . ) and a read selection signal line (90) are connected to the switches (46) ( . . . , 46n, 46n+1, . . . ). A read/write signal is transferred from the read selection signal line (90), and the switches (46) operate according to a bit decode value and the read/write signal.

Abstract: The present invention provides a magnetic memory device based on a novel driving method realizing reliable writing and a method of writing the magnetic memory device. Four parallel portions are formed in a pair of loop-shaped write lines (6Xn) and (6Yn). Magnetoresistive devices (12A) and (12B) disposed in the parallel portion in an upper stage construct a memory cell (12Ev), and magnetoresistive devices (12A) and (12B) disposed in the parallel portion in a lower stage construct a memory cell (12Od). When current in the direction from the drive point A to the drive point B is passed from the current drives (123n) and (133n), the directions of the currents in the write lines (6Xn) and (6Yn) are aligned in the parallel portion of the memory cell (12Ev) but are opposite to each other in the parallel portion in the memory cell (12Od).

Abstract: A magnetoresistive effect element includes a TMR element disposed at an intersection where a bit line and a write word line intersect, in a manner sandwiched between the bit line and the write word line, and is configured such that it includes a sensitive magnetic layer whose magnetization direction is changed by a synthetic magnetic field of magnetic fields generated around the bit line and the write word line, and at the same time such that electric current flows in a direction perpendicular to the laminating surfaces thereof, and a magnetic material individually covering the bit line and the write word line at the intersection, thereby forming an annular magnetic layer associated with the bit line and an annular magnetic layer associated with the write word line.

Abstract: The present invention provides a magnetic memory device capable of performing reading operation with lower power consumption and at high read precision and a method of reading the magnetic memory device. Sense bit lines (21A, 21B) are provided in a bit line direction for each pair of magnetoresistive devices (12A, 12B) constructing a storage cell (12) and a read current is supplied. The read currents passed through the pair of magnetoresistive devices (12A, 12B) flow to the ground via a sense word line (31). Further, by providing a constant current circuit (108B) commonly for plural sense word lines (31), the sum of a pair of read currents passing through the pair of magnetoresistive devices (12A, 12B) in one storage cell constant, and information is read from the storage cell (12) on the basis of the difference between the pair of read currents. By sharing the constant current circuit (108B), variations in the sum of the pair of read currents can be reduced, and power consumption can be also reduced.

Abstract: The present invention provides a magnetic memory device capable of reducing a loss of a magnetic field generated by currents flowing in a write line and performing writing stably, and a magnetic memory cell mounted on the magnetic memory device. Further, the invention provides a method for easily manufacturing such a magnetic memory device. A magnetic memory cell includes: stacked bodies each including a magneto-sensitive layer whose magnetization direction changes according to an external magnetic field, and constructed so that current flows in a direction perpendicular to a stack layer surface; and a toroidal magnetic layer disposed between the first and second stacked bodies so that the direction along the stack layer surface is set as an axial direction, and constructed so as to be penetrated by a plurality of conductors along the axial direction.

Abstract: A magnetic memory device includes a plurality of storage cells disposed in two dimensions, read lines that supply a read current for reading information from a first power supply to the respective storage cells, and a second power supply that is connected to at least some of the read lines and applies an intermediate voltage, which is lower than the voltage supplied by the first power supply, to the connected read lines.

Abstract: To provide a magnetic memory cell that is capable of efficiently changing the magnetization directions of magneto-sensitive layers. A magnetic memory cell comprises an annular magnetic layer 4a through which extends a write bit line 5a that generates a magnetic field, and a TMR film S20a configured so as to include: a first magneto-sensitive layer 14a, a magnetization direction of which is changed by the magnetic field in the annular magnetic layer 4a; and a magnetoresistive effect revealing body 20a disposed on a surface of the first magneto-sensitive layer 14a so that an electric current flows in a direction perpendicular to a laminating surface of the laminate, and the first magneto-sensitive layer 14a has a thickness thereof set in a range of not less than 0.5 nm to not more than 40 nm.

Abstract: The number of write circuit components, variations in a write current flowing through each write line, and the power consumption for write operation can be reduced. A first constant current circuit and a second constant current circuit (a transistor (Q8) and a resistor (R4), and a transistor (Q7) and a resistor (R3)) are shared among a plurality of current direction control portions (54n?1, 54n, 54n+1, . . . ). The constant current circuits are connected to each current direction control portion (54) through a first circuit selector switch (SW1 . . . , SW1n, SW1n+1, . . . ) and a second circuit selector switch (SW2 . . . , SW2n, SW2n+1, . . . ) disposed for each current direction control portion (54). Moreover, a decode signal voltage is applied to the constant current circuits from a word decode line (16X) (bit decode line (16Y)) through the circuit selector switches (SW1) and (SW2).

Abstract: A magnetic memory device which can be formed with a further reduced size. The magnetic memory device includes: a plurality of memory cells each including at least one magnetoresistive effect revealing body and arranged along a pair of lines; a plurality of auxiliary write lines arranged so that each memory cell is provided with one auxiliary write line, each auxiliary write line being connected to the pair of lines, for introducing write currents flowing through the pair of lines to the vicinity of the magnetoresistive effect revealing body; and transistors arranged so that one transistor is inserted in each auxiliary write line, for allowing the write current to flow bidirectionally through the auxiliary write line in an operating state of the transistors.

Abstract: A magnetoresistive effect element according to the present invention is comprised of a TMR element that is disposed at an intersection where a bit line and a write word line intersect with each other, in a manner sandwiched between the bit line and the write word line, and is configured such that it includes a sensitive magnetic layer whose magnetization direction is changed by a synthetic magnetic field of magnetic fields generated around the bit line and the write word line, and at the same time such that electric current flows in a direction perpendicular to the laminating surfaces thereof, and a magnetic material individually covering the bit line and the write word line at the intersection, thereby forming an annular magnetic layer associated with the bit line and an annular magnetic layer associated with the write word line. The sensitive magnetic layer comprises a magnetic material portion of the annular magnetic layers of the magnetic material, sandwiched by the bit line and the write word line.

Abstract: The present invention provides a magnetic memory device capable of performing reading operation with lower power consumption and at high read precision and a method of reading the magnetic memory device. Sense bit lines (21A, 21B) are provided in a bit line direction for each pair of magnetoresistive devices (12A, 12B) constructing a storage cell (12) and a read current is supplied. The read currents passed through the pair of magnetoresistive devices (12A, 12B) flow to the ground via a sense word line (31). Further, by providing a constant current circuit (108B) commonly for plural sense word lines (31), the sum of a pair of read currents passing through the pair of magnetoresistive devices (12A, 12B) in one storage cell constant, and information is read from the storage cell (12) on the basis of the difference between the pair of read currents. By sharing the constant current circuit (108B), variations in the sum of the pair of read currents can be reduced, and power consumption can be also reduced.

Abstract: A magnetic memory device and a sense amplifier circuit capable of obtaining a read signal output with a high S/N ratio and reducing power consumption and a circuit space, and a method of reading from a magnetic memory device are provided. In a sense amplifier, transistors (41A), (41B) which are differential amplifiers are commonly connected to one constant current circuit (50) through switches (46) ( . . . , 46n, 46n+1, . . . ). Corresponding bit decode lines (20) ( . . . , 20n, 20n+1, . . . ) and a read selection signal line (90) are connected to the switches (46) ( . . . , 46n, 46n+1, . . . ). A read/write signal is transferred from the read selection signal line (90), and the switches (46) operate according to a bit decode value and the read/write signal.